الرئيسية › دليل الباحثين › Amel Ben Fredj
Amel Ben Fredj
الانتماء : Tunis El Manar University
- 58منشورات (انتماء تونسي)
- 66مجموع المنشورات
- 540الاستشهادات
- 12مؤشر h
الملف البحثي
لدى Amel Ben Fredj 58 منشور(ات) مفهرسة (1985–2026). تُنشر أعماله أساسًا في «Synthetic Metals»، «Physical Review B» و«Semiconductor Science and Technology». أكثر مقالاته استشهادًا هو «Influence of the composition fluctuation and the disorder on the bowing band gap in semiconductor materials» (2007)، وقد استُشهد به 31 مرة. 6 من هذه المنشورات تعود إلى آخر ثلاث سنوات من النشاط. شارك في تأليف أعماله 12 باحثًا على الأقل، منهم باحثون من مؤسسات في النمسا، ألمانيا، الجزائر.
هل هذا أنت؟ عرّف بأبحاثك
أنشئ ملفك على DzCademia مجانًا وأضف مقالاتك: ستظهر بسهولة أكبر على Google وفي مساعدي الذكاء الاصطناعي مثل ChatGPT، فيقرؤها ويستشهد بها عدد أكبر من الناس.
إنشاء ملفي المجاني إضافة منشوراتيمجالات البحث
- Organic Electronics and Photovoltaics
- Organic Light-Emitting Diodes Research
- Semiconductor Quantum Structures and Devices
- Photochemistry and Electron Transfer Studies
- Quantum and electron transport phenomena
المنشورات (58)
- Impedance and Dielectric Relaxation Dynamics in AnE-PVad:PCBM Organic Solar Cell: Insights into Interfacial Polarization and Charge Transport
- Spin-Dependent Recombination Pathways Revealed by Magnetoconductance in Annealed Polymer–Fullerene Bulk Heterojunction Solar Cells
- Charge Transport, Dielectric Response, and Magnetoconductance in Organic Diodes Based on a Novel P18-8 Conjugated Polymer for Magnetic Sensor Applications
- Temperature-dependent dielectric response and charge transport mechanisms in silicon nanowires for nanoelectronic and sensing applications
- From quenched to superradiant emission: Temperature-induced molecular rearrangement in an anthracene containing statistical copolymer
- Correction: N , N ′-Substituted quinacridones for organic electronic device applications
- N , N ′-Substituted quinacridones for organic electronic device applications
- Effect of active layer thickness on the charge recombination and dissociation in bulk heterojunction polymer solar cells under open circuit conditions
- New conjugated polymer/fullerene nanocomposite for energy storage and organic solar cell devices: Studies of the impedance spectroscopy and dielectric properties
- Static, Dynamic, Dielectric, and Magnetic Investigations on AnE-PVstat: PCBM Polymer Solar Cells under Open-Circuit Conditions
- Blend ratio and applied voltage effects on the charge recombination in bulk heterojunction polymer solar cells based on anthracene-containing poly(arylene-ethynylene)-alt-poly(arylene-vinylene) studied using magnetoconductance
- Annealing temperature dependence of the performance of bulk heterojunction polymer: Fullerene solar cells under short and open circuit conditions
- Effect of Etching Time to Tune Magnetoresistance Between Positive and Negative Values in p-Type Silicon Nanowires
- Improvement of polymer:fullerene bulk heterojunction morphology via temperature and anti-solvent effect
- Role of triplet-doublet quenching in organic magnetoconductance
- Impact of alkoxy side chains on morphology and excitonic coupling in PPE-PPV copolymer thin films
- Thickness dependence of organic magnetoconductance of polymeric semiconductor device based on an ambipolar polymer AnE-PV stat
- Effect of alkoxy side chains on intra and interchain exciton coupling in PPE-PPV copolymers solution
- Morphology-dependent exciton diffusion length in PPE-PPVs thin films as revealed by a Forster mechanism based-study
- Study of magnetoconductance effect in silicon nanowires formed by chemical etching in HF/AgNO 3 solution: Effect of etching time
- Effect of porosity on the enhancement of relative magnetoconductance in porous Si nanostructures: a comparative study with Si nanowires
- Temperature-dependent intermolecular coupling and exciton migration in an anthracene containing PPE-PPV copolymer
- Analysis of the ac response of an organic bulk-heterojunction solar cell based on AnE-PVstat:PCBM
- Electrical conductance and magnetoconductance effect on n-type porous silicon: Contribution of weak localization correction
- Spectroscopic characterization of a red light-emitting polymer: Anthracene-containing poly(p-arylene-ethynylene)-alt-poly(p-arylene-vinylene)
- Role of recombination, dissociation, and competition between exciton-charge reactions in magnetoconductance of polymeric semiconductor device
- Franck-Condon analysis of the photoluminescence spectra of a triple-bond containing polymer as a solution and as a thin film
- Enhancement of magneto-conductance in n-Si/n-PS/NPB structures at room temperature
- Role of intermolecular coupling and electron-nuclear coupling in the photophysics of oligothiophenes
- Effect of pressure on the energy band gaps of wurtzite GaN and AlN and electronic properties of their ternary alloys AlxGa1−xN
- Observation and study of the negative magnetoresistance in porous silicon
- Modeling of the Tunisian 60Co gamma irradiator by a coaxial equal height and equal activity single pencil
- Delayed fluorescence in α-quaterthiophene single crystal
- A theoretical study of laser structures based on dilute-nitride InAsN for mid-infrared operation
- THEORETICAL COMPARISON OF DILUTE-NITRIDE "W" AND "M" InAsN / GaSb MID-INFRARED LASER DIODES
- Energy-band structure and optical gain in strained InAs(N)/GaSb/InAs(N) quantum well lasers.
- InAsN/GaSb/InAsN ‘W’ quantum well laser for mid-infrared emission: from electronic structure to threshold current density calculations
- Fluorescence-detected magnetic resonance in organic systems: A pair-density matrix formalism approach
- Calculations of electronic structure, elastic properties for YxGa1−xN and band offsets of YxGa1−xN/ScyGa1−yN heterointerfaces
- Influence of the composition fluctuation and the disorder on the bowing band gap in semiconductor materials
- Elastic properties and optical phonon frequencies of zinc-blende Sc x Ga 1− x N
- Nitrogen effect on optical gain and radiative current density for mid-infrared InAs(N)/GaSb/InAs(N) quantum-well laser
- A novel quantum laser structure based on InAsN/GaSb system
- Effect of nitrogen concentration on the electronic and vibrational properties of zinc-blende InNxP1-x(x < 0.01)
- Determination of natural radioactivity in building materials used in Tunisian dwellings by gamma ray spectrometry
- Quantitative analysis of gamma-ray emitters radioisotopes in commercialised bottled water in Tunisia
- Theoretical and experimental study of dynamic triplet-triplet annihilation in an organic one-dimensional motion system
- Theoretical study of dynamic triplet–triplet annihilation in sexithiophene crystal
- Band offset calculations applied to III–V nitride quantum well device engineering
- Photoconductivity detected magnetic resonance (PDMR) in crystalline tetracene
- Electronic band parameters for zinc-blende Al1$minus$xGaxN
- Evidence of triplet–triplet interaction in crystalline sexithiophene
- Electric field effect on the spatially separated electron–hole recombination in an Si/Si1−xGex resonant tunneling heterostructure
- Analyse radioisotopique par spectrométrie gamma haute résolution d'échantillons de sol prélevés le long du golfe de Gabès au voisinage d'une usine de phosphates
- Triplet-triplet interaction in a nearly one dimensional molecular crystal: Application to 1,4-dibromonaphtalene
- Nouvelle approche du calcul de la constante d'interaction triplet-triplet dans les cristaux moléculaires
- Perturbation par une puissance micro-onde de l'interaction triplet-doublet dans les cristaux moléculaires. Application à la photoconductivité de l'anthracène.
- Observation en microscopie électronique à haute résolution d'oxydes à grande maille (c-Dy2O3) et interprétation des images obtenues
مجلات النشر
- Synthetic Metals × 14
- Physical Review B × 3
- Semiconductor Science and Technology × 3
- The European Physical Journal B × 3
- ACS Omega × 2
- Journal of Electronic Materials × 2
المنشورات حسب السنة
- 20262
- 20253
- 20241
- 20232
- 20213
- 20201
- 20191
- 20183
- 20175
- 20161
التعاون العلمي
المؤسسات الشريكة : Tunis University · University of Monastir · University of Carthage · University of Gafsa · Research and Technology Center of Energy
بلدان المؤلفين المشاركين : النمسا · ألمانيا · الجزائر
المؤلفون المشاركون
- S. Romdhane
- Habib Bouchriha
- M. Radaoui
- Moncef Said
- Mourad Debbichi
- Mongi Bouaicha
- A. Bhouri
- B. Chouaibi
- Saïd Ridene
- Nesma Nafie
- Fayçal Kouki
- Mariem Guesmi
البيانات البيبليوغرافية مصدرها OpenAlex (قاعدة مفتوحة).
لماذا تختارون Dzcademia؟
ملفات أكاديمية ومقالات ومداخلات علمية: امنحوا أبحاثكم حضوراً عاماً منظماً. تساعد البيانات الوصفية المدمجة محركات البحث ومساعدات الذكاء الاصطناعي على التعرف على أعمالكم وفهم مراجعها.
علّق عبر Google
سجّل الدخول عبر Google للتعليق مباشرة على هذه الصفحة.