الرئيسية › دليل الباحثين › M. Souissi

M. Souissi

الانتماء : Institut Supérieur d'Informatique et des Technologies de Communication de Hammam Sousse · University of Sousse

• 16منشورات (انتماء تونسي)
• 16مجموع المنشورات
• 129الاستشهادات
• 7مؤشر h

ORCIDOpenAlex

مجالات البحث

• GaN-based semiconductor devices and materials
• ZnO doping and properties
• Silicon Carbide Semiconductor Technologies
• Magnetic properties of thin films
• Acoustic Wave Resonator Technologies

المنشورات (16)

• Structural, magnetic, and optical properties of (Ni + Fe)-Doped ZnO thin films for spintronic applications
  2026 · Applied Physics A
• Study of Zn1−2xNixFexO thin films coated on glass by sol–gel spin-coating method for DMS materials
  2023 · The European Physical Journal Plus · استُشهد به 2 مرة
• Structural, optical and thermal properties of V-doped GaN thin films grown by MOCVD technique
  2019 · Thermochimica Acta · استُشهد به 6 مرة
• Highlighting of ferromagnetism above room temperature in Cd-doped ZnO thin films grown by MOCVD
  2015 · Solid State Communications · استُشهد به 7 مرة
• Room temperature ferromagnetism in Cd-doped ZnO thin films through defect engineering
  2014 · Journal of Alloys and Compounds · استُشهد به 21 مرة
• Effects of high-temperature annealing on magnetic properties of V-doped GaN thin films grown by MOCVD
  2012 · Journal of Magnetism and Magnetic Materials · استُشهد به 8 مرة
• Corrigendum to “The annealing effects of V-doped GaN thin films grown by MOCVD” [Journal of Crystal Growth 340 (2012) 47–50]
  2012 · Journal of Crystal Growth
• The annealing effects of V-doped GaN thin films grown by MOCVD
  2011 · Journal of Crystal Growth · استُشهد به 2 مرة
• Optical and theoretical investigations of V2+ ion in GaN
  2011 · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · استُشهد به 1 مرة
• Room‐temperature ferromagnetism in V‐doped GaN thin films grown by MOCVD
  2010 · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · استُشهد به 2 مرة
• Diffusion behaviour of vanadium in GaN thin films studied by secondary ion mass spectrometry
  2009 · Semiconductor Science and Technology · استُشهد به 12 مرة
• Effect of carrier gas on the surface morphology of V-doped GaN layers
  2008 · Microelectronics Journal · استُشهد به 7 مرة
• Near-infrared photoluminescence of V-doped GaN
  2008 · Microelectronics Journal · استُشهد به 6 مرة
• Growth of vanadium-doped GaN by MOVPE
  2005 · Journal of Crystal Growth · استُشهد به 21 مرة
• Photoluminescence of V-doped GaN thin films grown by MOVPE technique
  2005 · Microelectronics Journal · استُشهد به 15 مرة
• Diffusion of vanadium in GaAs
  2004 · Journal of Crystal Growth · استُشهد به 19 مرة

مجلات النشر

• Journal of Crystal Growth × 4
• Microelectronics Journal × 3
• Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics × 2
• Applied Physics A × 1
• The European Physical Journal Plus × 1
• Thermochimica Acta × 1

المنشورات حسب السنة

• 20261
• 20231
• 20191
• 20151
• 20141
• 20122
• 20112
• 20101
• 20091
• 20082

التعاون العلمي

المؤسسات الشريكة : University of Monastir · University of Sfax · Faculty of Sciences of Sfax · University of Hafr Al-Batin

بلدان المؤلفين المشاركين : السعودية

المؤلفون المشاركون

• Belgacem El Jani
• A. Bchetnia
• Mohamed Bouzidi
• Zied Chine
• Souha Kammoun
• H. Souissi
• A. Rebey
• Afif Fouzri
• T. Boufaden
• Mohamed Dammak
• C. Saidi

البيانات البيبليوغرافية مصدرها OpenAlex (قاعدة مفتوحة).