الرئيسية › دليل الباحثين › Luca Varani
Luca Varani
الانتماء : Centre National de la Recherche Scientifique · Université de Montpellier · Institut d'Électronique et des Systèmes
- 40منشورات (انتماء فرنسي)
- 525مجموع المنشورات
- 2990الاستشهادات
- 30مؤشر h
الملف البحثي
لدى Luca Varani 40 منشور(ات) مفهرسة (1994–2026). تُنشر أعماله أساسًا في «HAL»، «International Conference on Noise and Fluctuations» و«Journal of Computational Electronics». أكثر مقالاته استشهادًا هو «Small-signal analysis of the Boltzmann equation from harmonic- and impulse-response methods» (1994)، وقد استُشهد به 19 مرة. شارك في تأليف أعماله 12 باحثًا على الأقل، منهم باحثون من مؤسسات في الجزائر، المغرب، إيطاليا، كندا.
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إنشاء ملفي المجاني إضافة منشوراتيمجالات البحث
- Terahertz technology and applications
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Semiconductor materials and interfaces
- Quantum and electron transport phenomena
المنشورات (40)
- Photoconductivity through different traps population in several semiconductors under harmonic laser excitations
- Plasma wave resonances in Graphene channels under controlled gate for high frequency applications
- Systematic analysis of semiconductor photoconductivity dynamics under different laser excitations: two- and three-level models
- Corrigendum to “Photoconductive response of a Field-Effect Transistor through the traps effect” [Opt. Commun. 451 (2019) 281–285]
- Terahertz response of a field-effect transistor loaded with a reactive component
- Analytical Characterization of unipolar diode based on Transistor Channels model
- Terahertz Responsivity Calculation of Unipolar Diodes Based on Transistor Channels Model
- Analytical Admittance and Noise Calculations in InGaAs transistor channels
- Saturation of THz detection in InGaAs-based HEMTs: a numerical analysis
- Analysis of THz detection saturation processes in InGaAs-based HEMTs
- Analytical admittance response of high mobility transistor channels
- Terahertz Small-Signal Response of Field-Effect Transistor Channels
- Hydrodynamic determination of the intrinsic small-signal equivalent circuit of HEMTs
- Analytical admittance characterization of high mobility channel
- TeraHertz electronic noise in field-effect transistors
- Simulation of plasma oscillation response to THz radiation applied upon high electron mobility transistors
- Characterization of the In0.53Ga0.47As n+nn+ Infrared Photodetectors
- Enhanced THz Detection Through Phase-Controlled Current Response in Field-Effect Transistors
- Terahertz detection and electronic noise in field-effect transistors
- Terahertz-frequency electronic noise in In0.53Ga0.47As n+nn+ nanostructure
- The Monte Carlo Simulation Coupled with Poisson Equation Applied to the Study of a Diode base of Hg0.8Cd0.2Te
- Terahertz current noise in n+nn+ diodes
- Improvement of FET-based terahertz detectors by phase-controlled current response
- The Monte Carlo Method Applied to Study of One-Dimensional Electronic Device (Diode) Based on Hg0.8Cd0.2Te
- High-frequency voltage noise of nanometric Schottky-barrier diodes and heterostructure barrier varactor in cyclostationary conditions
- Hydrodynamic Simulation of Drift Mobility in N-Hg0.8Cd0.2Te
- Quasi-Ballistic Transport In Submicron Hg0.8Cd0.2Te Diodes: Hydrodynamic Modeling
- ANALYTICAL MODEL OF HIGH-FREQUENCY NOISE OF SCHOTTKY-BARRIER FREQUENCY MULTIPLIERS
- Analytical model for the TeraHertz current noise in nanometric Schottky-barrier diodes and heterostructure barrier varactors
- Hydrodynamic modelling of electron transport in submicron Hg0.8Cd0.2Te diodes
- Hydrodynamic simulation of drift mobility in n-Hg0.8Cd0.2Te
- Calculation of the intrinsic spectral density of current fluctuations in nanometric Schottky-barrier diodes at terahertz frequencies
- Hydrodynamic simulation of electron transport in n-type Hg0.8Cd0.2Te
- An iterative matrix solution of the Boltzmann equation for the calculation of diffusion and noise in semiconductors
- Monte Carlo Simulation by Scattered Packet for Semiclassical Transport in Semiconductors: Application to Holes in Silicon
- Correlation functions from multiple solution of the transient Boltzmann equation in semiconductors: Application to noise temperature of holes in silicon
- A model noise temperature for nonlinear transport in semiconductors
- Nonequilibrium phonon effects on the transient high-field transport regime in InP
- A model hyperfrequency differential-mobility for nonlinear transport in semiconductors
- Small-signal analysis of the Boltzmann equation from harmonic- and impulse-response methods
مجلات النشر
- HAL × 6
- International Conference on Noise and Fluctuations × 4
- Journal of Computational Electronics × 3
- Journal of Applied Physics × 3
- Optics Communications × 2
- Physica B Condensed Matter × 2
المنشورات حسب السنة
- 20261
- 20231
- 20221
- 20191
- 20181
- 20173
- 20163
- 20153
- 20143
- 20137
التعاون العلمي
المؤسسات الشريكة : Université Montpellier 2 · University of Bechar · Université Ibn-Tofail · University of Modena and Reggio Emilia · Laboratoire de Chimie Organique
بلدان المؤلفين المشاركين : الجزائر · المغرب · إيطاليا · كندا
المؤلفون المشاركون
- C. Palermo
- Hugues Marinchio
- J. C. Vaissière
- Jean Pierre Nougier
- P. Houlet
- A. Mahi
- Laâmari Hlou
- J.C. Vaissi�re
- Evgenij Starikov
- L. Reggiani
- P. Shiktorov
- Lino Reggiani
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