الرئيسية › دليل الباحثين › H. Aourag
H. Aourag
الانتماء : University of Abou Bekr Belkaïd
- 142منشورات (انتماء جزائري)
- 177مجموع المنشورات
- 3587الاستشهادات
- 33مؤشر h
الملف البحثي
لدى H. Aourag 142 منشور(ات) مفهرسة (1995–2014). تُنشر أعماله أساسًا في «physica status solidi (b)»، «Physica B Condensed Matter» و«Materials Chemistry and Physics». أكثر مقالاته استشهادًا هو «FP-LAPW investigations of electronic structure and bonding mechanism of NbC and NbN compounds» (2002)، وقد استُشهد به 127 مرة. 2 من هذه المنشورات تعود إلى آخر ثلاث سنوات من النشاط. شارك في تأليف أعماله 12 باحثًا على الأقل، منهم باحثون من مؤسسات في فرنسا، الولايات المتحدة.
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إنشاء ملفي المجاني إضافة منشوراتيمجالات البحث
- Semiconductor materials and interfaces
- Advanced Chemical Physics Studies
- High-pressure geophysics and materials
- Semiconductor Quantum Structures and Devices
- Boron and Carbon Nanomaterials Research
المنشورات (142)
- First principles study of the electronic structures and magnetic properties of transition metal-doped cubic indium nitride
- Structural, Electronic and Magnetic Properties of Zinc-Blende Ga1−x TM x N (TM = Cr, Mn, Fe, V)
- Thermal properties of Ba1−xSrxZrO3 compounds from microscopic theory
- Effect of Oxygen Deficiencies and the Substitution of Fluorine on the Electronic States in YBa2Cu3O7‐δ Superconductors
- First‐principles calculations of the structural, electronic and optical properties of IIA–IV antifluorite compounds
- Comparative behavior of vacancy and C, B, N, O atoms single defect on hardening the B2-FeAl structure: An atomistic study
- State of the art simulations in electronic structure and total energy for the high temperature superconductor YBa2Cu3O7
- Piezomodulation of excitonic reflectance spectra in CuCl
- Vacancy effect in CuAg alloys
- Ab initio study of the stability of X (X=Cr, Nb, Ag) ultra-thin layers on Cu(001)
- State of the Art Simulations in Electronic Structure and Total Energy for the High Temperature Superconductor YBa2Cu3O7.
- Zinc-blende AlN and GaN under pressure: structural, electronic, elastic and piezoelectric properties
- Prediction study of elastic properties under pressure effect for zincblende BN, AlN, GaN and InN
- Empirical formula relating the bulk modulus to the lattice constant in tetrahedral semiconductors
- Ab initio calculations and experimental studies of site substitution of ternary elements in WC
- Numerical study of photolithography system: electromagnetic differential method
- Analytical investigation of solitary waves in nonlinear Kerr medium
- Propertiesofstrainedzinc-blendeGaN:first-principlesstudy
- Elastic Properties of Zinc-blende G a N, A l N and I n N from Molecular Dynamics
- Ab initio study of electronic properties of zincblende AlN and deformation potentials under hydrostatic stress
- Electronic study of FeTi, CoTi, and NiTi alloys: bulk, surfaces, and interfaces
- Ferromagnetic and antiferromagnetic couplings in Cr(0 0 1) thin films and TM monolayer/Cr(0 0 1) (TM = Ti, V, Cr, Mn, Fe, Co, Ni)
- Diffusion, surface alloy formation, and spin alignment in Fe/Cr(001) systems and superlattices
- Numerical study on localized defect modes in two-dimensional lattices: a high Q-resonant cavity
- Role of interface states in electronic properties of (ZnSe)n/(Si2)n (001) superlattices
- Quantum Monte Carlo study of insulating state in NaV2O5
- Quantum Monte-Carlo calculation of correlation functions of undistorted, cis-distorted and trans-distorted polyacene
- FP-LAPW investigations of electronic structure and bonding mechanism of NbC and NbN compounds
- First-principles calculations of vacancy effects on structural and electronic properties of TiCxand TiNx
- Calculation of bulk moduli of semiconductor compounds
- Energetic and Electronic Structure of the Hypothetical Cubic Zincblende-Like Semiconductors GeC and SnC
- The effect of pressure on the ionicity of In–V compounds
- Photonic band gaps in highly ionic medium: CuCl, CuBr, CuI
- Theoretical analysis of disorder effects on electronic and optical properties of the quaternary alloy Ga1−xAlxAsySb1−y
- Large photonic band gap's in one-dimensional multilayer structures
- First principles calculations of the hypothetical interface BN/XC (X = Si, Ge, Sn)
- The behavior of correlation functions in trans-polyacetylene: quantum Monte Carlo study
- Electronic momentum distribution in the one-dimensional extended Hubbard model: determinantal Monte Carlo study
- Tight-binding calculations: Electronic structure and interfacial properties of (ZnSe)n/ (Si 2) msuperlattices
- Correlation between the ionicity character and the heteropolar band gap in semiconductors
- The ground state and the bonding properties of the hypothetical cubic zinc-blende-like GeC and SnC compounds
- Structural and electronic properties of bulk BeS
- Correlation between the bulk modulus and the charge density in semiconductors
- First-Principles Calculations of Optical Properties of AlN, GaN, and InN Compounds under Hydrostatic Pressure
- The electronic structure of CuCl
- Theoretical Studies of Stoichiometric TiC
- Tight-binding calculation of structural properties of bulk Cu3Au and its corresponding clusters
- Numerical study of the one-dimensional Hubbard model in determination of trans-polyacetylene properties
- Quantum Monte Carlo study of the alternating extended Peierls–Hubbard model applied to the trans-polyacetylene
- Trends in band-gap pressure coefficients in boron compounds BP, BAs, and BSb
- Atomistic study of zinc-blende CdS, CdSe, ZnS, and ZnSe from molecular dynamics
- Molecular-dynamics study of the structural, elastic and thermodynamic properties of cadmium telluride
- Description of structural and electronic properties of TiC and ZrC by generalized gradient approximation
- Molecular dynamics simulation of CuI using a three-body potential
- Molecular Dynamics Study of Zinc-Blende GaN, AIN and InN
- The miscibility of CuxAg1−xI using a Tersoff potential
- Some empirical formulas for calculating the ionicity character in semiconductors
- Charge density calculations for strained zinc blende GaN, InN and AlN
- Nitride compounds as photonic crystals in the optical region
- Tight-Binding Calculation of Electronic and Elastic Properties of Ge
- Macroporous silicon with a photonic band gap at 3μm
- Molecular Dynamics Simulation of Solid C60 under Progressively Raised Pressure
- Unperturbed and perturbed nonlinear Schrödinger system for optical fiber solitons
- Competition between the ionic and covalent character in the series of boron compounds BP, BAs, and BSb
- Effective masses of electrons and heavy holes in InAs, InSb, GaSb, GaAs and some of their ternary compounds
- Cluster-model density functional study of a W–Cu(100) STM junction
- Atomistic study of zinc-blende BAs from molecular dynamics
- Electronic properties and strain effects in zinc blende GaN and InN
- Exciton-polariton reflectance in CuI single crystals
- Atomistic simulation of a high-pressure phase of AgI using a three-body potential
- Tight-binding calculations of electronic properties of AgI
- Structural and Electronic Properties of Semiconductor Cx(BN)1-x Alloy
- Structural and thermodynamic properties of Cx(BN)1-xalloy
- Molecular-dynamics simulation of carbon in the clathrate structures
- The miscibility of C60xC70(1−x) alloy at high temperature
- Temperature effect on photonic band gap in polymer photonic lattices
- Molecular-dynamics simulation of structural and thermodynamic properties of boron nitride
- First-principles study of structural and electronic properties of BSb
- Electronic and Optical Properties of Copper Halide Mixed Crystals CuBr1?xIx
- Structural and Dynamical Properties of Zincblende GaN
- Electronic and optical properties of copper halides mixed crystal CuCl1 − xBrx
- Calculation of electronic and optical properties of zinc blende GaP1−xNx
- Positron Annihilation Studies in SixSn1?x and GexSn1?x Alloys
- Electronic structure of Si1−x−yCxGey
- Quantum size effect from n-type porous silicon
- Theoretical analysis of disorder effects on electronic and optical properties in InGaAsP quaternary alloy
- Empirical Pseudo-Potential Calculations in GaAs1?xNx and AlAs1?xNx Ordered Alloys
- The temperature dependence of the band gaps in narrow-gap semiconductors
- Energy Gap versus Alloy Composition and Temperature in GaxIn1?xSb
- Atomistic Simulation of the Structural, Elastic and Thermodynamic Properties of Fullerite
- Electron-positron momentum density in InAs x Sb1- x
- Electronic structure of GaSb under temperature and pressure effects
- Photonic Band Structures of Two- and Three-Dimensional Periodic Dielectric Materials
- Positron Annihilation Studies in CuCl
- Optical properties of SiSn and GeSn
- Electronic structure of AlxGa1 − xAs and GaPxAs1 − x alloys modified virtual crystal approximation calculation using sp3s* band structures
- Dynamical Charge and Force Constant Calculations in c‐BN under Pressure
- Parabolic quantum wells of AlGaAs: bandstructure calculations
- Positron annihilation in narrow‐gap semiconductors
- Theoretical investigation of the pressure dependences of energy gaps in InAs and InSb
مجلات النشر
- physica status solidi (b) × 19
- Physica B Condensed Matter × 9
- Materials Chemistry and Physics × 8
- Materials Science and Engineering B × 7
- Journal of Physics Condensed Matter × 7
- Infrared Physics & Technology × 6
المنشورات حسب السنة
- 20141
- 20131
- 20071
- 20061
- 20057
- 20046
- 200310
- 200212
- 200110
- 200014
التعاون العلمي
المؤسسات الشريكة : Université Djilali de Sidi Bel Abbès · Université Oran 1 Ahmed Ben Bella · Centre National de la Recherche Scientifique · École Nationale Polytechnique d'Oran · Université de Bourgogne
بلدان المؤلفين المشاركين : فرنسا · الولايات المتحدة
المؤلفون المشاركون
- Brahim Khelifa
- Bachir Bouhafs
- Noureddine Amrane
- H. Abid
- N. Bouarissa
- Nacer Badi
- W. Sekkal
- B. Soudini
- A. Zaoui
- M. Ferhat
- Abdelkader Tadjer
- Abdelkader Belaidi
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