الرئيسية › دليل الباحثين › A. Telia
A. Telia
الانتماء : University Frères Mentouri Constantine 1 · Larbi Ben M'hidi University of Oum El Bouaghi
- 31منشورات (انتماء جزائري)
- 39مجموع المنشورات
- 241الاستشهادات
- 10مؤشر h
الملف البحثي
لدى A. Telia 31 منشور(ات) مفهرسة (2005–2025). تُنشر أعماله أساسًا في «Journal of New Technology and Materials»، «Digest Journal of Nanomaterials and Biostructures» و«International Conference on Signals, Circuits and Systems». أكثر مقالاته استشهادًا هو «Growth and characterization of thin ZnO films deposited on glass substrates by electrodeposition technique» (2010)، وقد استُشهد به 26 مرة. 4 من هذه المنشورات تعود إلى آخر ثلاث سنوات من النشاط. شارك في تأليف أعماله 12 باحثًا على الأقل، منهم باحثون من مؤسسات في فرنسا.
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إنشاء ملفي المجاني إضافة منشوراتيمجالات البحث
- GaN-based semiconductor devices and materials
- Silicon Carbide Semiconductor Technologies
- ZnO doping and properties
- Semiconductor materials and interfaces
- Advancements in Semiconductor Devices and Circuit Design
المنشورات (31)
- Electronic and optical properties of biaxially strained Al1-xGaxN and In1-xGaxN
- Comparative Study of Electrical Characteristics in MgZnO/ZnO and AlGaN/GaN HEMTs
- The Effect of CD on the Structural and Optical Properties of ZnMgO for Ultraviolet Photodetector Applications
- Experimental and ab-initio analysis of structural, electronic and optical properties of ZMCO thin films elaborated by sol-gel method for optoelectronic application
- Influence of the GaN cap layer thickness on the two- dimensional electron gas (2-DEG) sheet charge density of GaN/AlInN/GaN HEMTs with polarization effect
- Experimental and theoretical study on structural and electronic properties of Zn1-xMgxO from (x=0 to 0.375) in wurtzite phase
- Tight Binding and Density Functional Theory of Tailoring Electronic Properties in Al1−xInxN/AlN/GaN High Electron Mobility Transistors (HEMTs)
- An analytical model for the current voltage characteristics of GaN-capped AlGaN/GaN and AlInN/GaN HEMTs including thermal and self-heating effects
- Investigation on Structural and Electronic Properties of Zn1- xMgxO in Wurtzite Phase Using First Principal calculations
- Structural and electronic properties of wurtzite, zincblende and rocksalt Al1 − xInxN ternary alloys at ambient and high pressure
- Electrical and optical numerical modeling of DP-PPV based polymer light emitting diode
- Effect of copper doping sol-gel ZnO thin films: physical properties and sensitivity to ethanol vapor
- Humidity sensor characteristics based on ZnO nanostructure grown by sol-gel method
- Fabrication of ZnO thin film based humidity sensor with fast response by sol-gel associated to spin coating method
- High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping
- Fabrication and Characterization of Zinc Oxide ( ZnO ) Thin Films Based Humidity Sensor with Fast Response by Sol-Gel Method
- Effect of Solvents on the Properties of ZnO Thin Layers Obtained by Sol Gel Dip Coating Process
- Electrical Characteristics of Organic Light Emitting Diode ( OLED ) Finite Difference Modeling
- Analytical modeling and analysis of Al m Ga1−m N/GaN HEMTs employing both field-plate and high-k dielectric stack for high-voltage operation
- Influence of solvent on humidity sensing of sol-gel deposited ZnO thin films
- Strain relaxation and thermal effects on the drain conductance in AlGaN/GaN HEMT
- REALIZATION AND CALIBRATING OF A DIP COATER FOR THIN FILMS DEPOSITION
- Effects of spontaneous and piezoelectric polarization on AlInN/GaN heterostructure
- The thermal effect on the output conductance in AlGaN/GaN HEMT's
- Effect of strain relaxation on the drain conductance in AlGaN/GaN HEMTs
- Growth and characterization of thin ZnO films deposited on glass substrates by electrodeposition technique
- Trap characterization in AlGaN/GaN HEMT by analyzing frequency dispersion in capacitance and conductance
- Study of field plate effects onAlGaN/GaN HEMTs
- Modeling of AlGaN/GaN HEMTs using field-plate technology
- Analysis of trap states effects on the frequency-dependent capacitance and conductance of an AlGaN/GaN heterostructure
- I-V and C-V methods to extract Al/polysilicon Schottky diode parameters
مجلات النشر
- Journal of New Technology and Materials × 3
- Digest Journal of Nanomaterials and Biostructures × 2
- International Conference on Signals, Circuits and Systems × 2
- Physica B Condensed Matter × 1
- International Conference of Advanced Technology in Electronic and Electrical Engineering (ICATEEE) × 1
- International Conference on Electrical, Computer, Telecommunication and Energy Technologies (ECTE-Tech) × 1
المنشورات حسب السنة
- 20252
- 20242
- 20223
- 20202
- 20182
- 20171
- 20152
- 20144
- 20134
- 20123
التعاون العلمي
المؤسسات الشريكة : University of Eloued · Université d'Orléans · Laboratoire Pluridisciplinaire de Recherche en Ingénierie des Systèmes, Mécanique et Energétique · Université Djilali de Sidi Bel Abbès · Amar Telidji University of Laghouat
بلدان المؤلفين المشاركين : فرنسا
المؤلفون المشاركون
- L. Semra
- Chahra Boukaous
- Salah Ghanem
- Aissa Bellakhdar
- Amel Meziani
- Meziani Abdelhakim
- M. Kaddeche
- R. Soudous
- K. Benatia
- M.S. Aïda
- F.Z. Aouacheria
- Salaheddine Mermoune
البيانات البيبليوغرافية مصدرها OpenAlex (قاعدة مفتوحة).
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