الرئيسية › دليل الباحثين › Z. Benamara
Z. Benamara
الانتماء : Université Djilali de Sidi Bel Abbès
- 110منشورات (انتماء جزائري)
- 155مجموع المنشورات
- 1083الاستشهادات
- 18مؤشر h
الملف البحثي
لدى Z. Benamara 110 منشور(ات) مفهرسة (1999–2026). تُنشر أعماله أساسًا في «Semiconductors»، «Materials Science and Engineering C» و«DOAJ (DOAJ: Directory of Open Access Journals)». أكثر مقالاته استشهادًا هو «Characterization of interface states at Au/InSb/InP(100) Schottky barrier diodes as a function of frequency» (2000)، وقد استُشهد به 133 مرة. 18 من هذه المنشورات تعود إلى آخر ثلاث سنوات من النشاط. شارك في تأليف أعماله 12 باحثًا على الأقل، منهم باحثون من مؤسسات في فرنسا، إيطاليا، إسبانيا.
هل هذا أنت؟ عرّف بأبحاثك
أنشئ ملفك على DzCademia مجانًا وأضف مقالاتك: ستظهر بسهولة أكبر على Google وفي مساعدي الذكاء الاصطناعي مثل ChatGPT، فيقرؤها ويستشهد بها عدد أكبر من الناس.
إنشاء ملفي المجاني إضافة منشوراتيمجالات البحث
- Semiconductor materials and interfaces
- Semiconductor materials and devices
- GaN-based semiconductor devices and materials
- Silicon Carbide Semiconductor Technologies
- Silicon and Solar Cell Technologies
المنشورات (110)
- Optical response of Ag/poly-Si/ITO Schottky diodes under illumination: experiment and 2D modeling
- Interface states effect on conduction mechanisms and barrier height homogeneities of Au/n-GaAs Schottky structures in a wide temperature range
- Comparison of inhomogeneous Schottky barrier modeling approaches in SiC polytypes
- Investigating the Role of Dangling Bond DOS in Dark- and Light-Induced Conductivity of a-Si:H for Photovoltaic Applications
- Enhancing the Efficiency of In0.62Ga0.38N Solar Cells Using an InN Back Surface Field Layer: A Numerical Simulation Approach
- Enhanced Efficiency and Stability of n-i-p Planar Perovskite Solar Cells through PCBM Interface Passivation and an HTM-free layer: A SCAPS-1D Simulation Study
- Study of the Surface Photovoltage and Photovoltaic Properties of Au/δ-GaN/n-GaAs Schottky Barrier-Based Photodetectors
- Enhanced NO2 Detection in ZnO-Based FET Sensor: Charge Carrier Confinement in a Quantum Well for Superior Sensitivity and Selectivity
- Analysis and optimization of technological parameters for high performance of the mechanically stacked Si/Ge solar cell
- Effect of the Ultra-thin GaN Interlayer on the Mechanisms of Conduction in Au/GaAs Schottky Barrier Diodes
- Modeling and Analysis of Temperature-Dependent I–V Characteristics in Ti/6H-SiC Schottky Diodes
- Electrical optimization of metal/GaN/GaAs structures: role of GaN thickness, contact metal, and frequency
- Fabrication Process of Nano and Optoelectronic Devices Based on Nitrided Gaas: XPS Analysis and Electrical Measurements
- C-V and G-V Characteristics of Nitridated GaAs (100) Structures as Function of Frequency-Effect of Series Resistance
- Study of the Effect of InP (100) Nitridation Time by XPS Analysis and Electrical Characterisation
- A comparative study of Schottky barrier heights and charge transport mechanisms in 3C, 4H, and 6H silicon carbide polytypes
- Accurate parameter estimation of Au/GaN/GaAs schottky diode model using grey wolf optimization
- Prediction of the Photovoltaic Behavior of In0.3Ga0.7N PIN Solar Cell VIA Intrinsic Layer Doping Optimization
- Electrical behavior of n-GaAs Schottky nanowire in wide temperature range for different contacts
- Effect of the contact area on the electrical characteristics of the Ti/6H–SiC (n) Schottky diode
- A new approach to studying the electrical behavior and the inhomogeneities of the Schottky barrier height
- Modeling the Abnormal Behavior of the 6H-SiC Schottky Diode Using Lambert W Function
- Current–Voltage, Capacitance–Voltage–Temperature, and DLTS Studies of Ni|6H-SiC Schottky Diode
- Conduction Mechanisms in Au/0.8 nm–GaN/n–GaAs Schottky Contacts in a Wide Temperature Range
- Electrical behavior of n‐GaAs based Schottky diode for different contacts: Temperature dependence of c urrent‐voltage
- Effect of metallic contacts diffusion on Au/GaAs and Au/GaN/GaAs SBDs electrical quality during their fabrication process
- Effect of the Ultra-Thin GaN Interlayer on the Electrical and Photoelectrical Parameters of Au|GaAs Schottky Barrier Diodes
- Electrical Characterization and Interface State Density in Au/n-InN/InP Schottky Diode
- Current--Voltage, Capacitance--Voltage--Temperature, and DLTS Studies of Ni|6H-SiC Schottky Diode
- Study of Temperature-dependent Conduction Mechanisms in Au/0.8nm-GaN/n-GaAs Schottky Diode
- GaAs1-xNx candidate material for a high efficiency based homojunction solar cell
- Optimal estimation of Schottky diode parameters using a novel optimization algorithm: Equilibrium optimizer
- Optimal Estimation of Schottky Diode Parameters Using Advanced Swarm Intelligence Algorithms
- A study of current‐voltage and capacitance‐voltage characteristics of Au/n‐GaAs and Au/GaN/n‐GaAs Schottky diodes in wide temperature range
- A new model of thermionic emission mechanism for non-ideal Schottky contacts and a method of extracting electrical parameters
- Numerical study of AgInTe2 solar cells using SCAPS
- Analysis of the current-voltage characteristic of the Schottky diode based on free-standing GaN substrate
- Hafnium dioxide effect on the electrical properties of M/n-GaN structure
- TCAD Simulation of the Electrical Characteristics of Polycrystalline Silicon Thin Film Transistor
- Comparative study of ionic bombardment and heat treatment on the electrical behavior of Au/GaN/n-GaAs Schottky diodes
- Investigation, analysis and comparison of current-voltage characteristics for Au/Ni/GaN Schottky structure using I-V-T simulation
- Simulation of the GaAsN-based Schottky solar cell prototype
- The major influence of the conduction-band-offset on Zn(O, S)/CuIn0.7Ga0.3Se2 solar cells
- Investigation of Cu(In, Ga)Se2 solar cell performance with non-cadmium buffer layer using TCAD-SILVACO
- Simulation and Experimental Studies of Illumination Effects on the Current Transport of Nitridated GaAs Schottky Diode
- Modeling and Simulation of Capacitance–Voltage Characteristics of a Nitride GaAs Schottky Diode
- Low- and High-Frequency C–V Characteristics of Au/n-GaN/n-GaAs
- The effect of introduction of HfO2 on the electrical characterization of the Pt/HfO2/n-GaN
- Electron cyclotron resonance ion source nitridation of Au/n-GaAs schottky diode and current-voltage characterization
- Electrical and photoelectrical characteristics of Au/GaN/GaAs Schottky diode
- Study of the surface state density and potential in MIS diode Schottky using the surface photovoltage method
- Simulation and electrical characterization of InN/InP diodes
- Investigation of improved PV parameters through AMPS-1D in micromorph tandem solar cells with a microcrystalline tunnel recombination junction
- Study of the characteristics current-voltage and capacitance-voltage in nitride GaAs Schottky diode
- Effects of the GaN layers and the annealing on the electrical properties in the Schottky diodes based on nitrated GaAs
- Ni/SiC–6H Schottky Barrier Diode interfacial states characterization related to temperature
- Electrical behaviour and analytical modelling of I-V and C-V characteristics of Schottky barrier diode based on nitrided InP(100)
- Electrical characterisation of Schottky diodes based on SiC with different contact surfaces
- Current Transport Mechanisms and Capacitance Characteristic in the InN/InP Schottky Structures
- Interface States Densities Effect at SiO2/ Polysilicon and SiO2/ Monosilicon Surfaces on N-polysilicon /Oxide/ P-Monosilicon Capacitance
- Physical Mechanisms Responsible for Electrical Conduction in Pt/GaN Schottky Diodes
- The Inversion Layer Evolution According to the Report of Substrat Doping /Gate Doping of a MSP OS Structure
- Characterization and comparison between Ig(Vgs) structures HEMT AlInN/GaN and AlGaN/GaN
- Numerical simulation of solar cells based on III–V nitride compounds
- Electronic and Spectroscopic Study of the GaAs nitridation – Electronic Characterization Associated
- Analysis of C-V Characteristics of InP(p)/InSb/Al2O3/Au MIS Structures in Wide Temperature Range
- Impact of the inhomogeneous structure of the active layer on the transfer characteristic of polysilicon TFT's
- First stages of surface steel nitriding: X-ray photoelectron spectroscopy and electrical measurements
- Electrical properties of gallium arsenide surfaces and interfaces treated by Ru(3+) ions
- Dependence of photovoltaic parameters on grain size and density of states in n+–i–p+ and p+–i–n+ polycrystalline silicon solar cells
- Experimental study and two-dimensional modeling of avalanche breakdown voltage in polycrystalline silicon p-n junctions
- Illumination dependence of I–V and C–V characterization of Au/InSb/InP(100) Schottky structure
- Nitridation of InP(100) substrates studied by XPS spectroscopy and electrical analysis
- Frequency effect on the metal/polysilicon/oxide/silicon capacitance
- Electrical transport characteristics of Au/n-GaN Schottky diodes
- XPS, electric and photoluminescence-based analysis of the GaAs (100) nitridation
- Two-dimensional simulation of the effects of grain boundaries on theC–Vcharacteristics of P+N polysilicon diodes
- Experimental analysis and 2D-simulation of C–V characteristics in Ag/poly(Si)/ITO/glass Schottky diode
- Electrical characterization of Au/n-GaN Schottky diodes
- Auger electronic spectroscopy and electrical characterisation of InP(100) surfaces passivated by N2 plasma
- Study of the breakdown voltage in lateral polysilicon N+P junctions
- Study and improvement of interfacial properties in a MIS structure based on p-type InP
- Analysis and simulation of Au/InSb/InP diode C–V characteristic: modeling and experiments
- Electrical parameters evolution of Au/InP(100) and Au/InSb/InP(100) systems with restructuring conditions
- Chemical lowering of the interface Fermi level of n and p types GaAs/Al Schottky diodes
- Study and characterization of the structures Au/Al2O3/Si and Au/Al0/Al2O3/Si
- Influence of Ru3+ ions at Al2O3/GaAs interface on MIS structures
- Effect of InSb buffer layer in MIS structures based on InP
- Numerical Simulation of the Electrical Conduction in a P-N Junction Under Solar Lighting: Application to CdZnS(n+)/CdTe(p) Heterostructure
- Numerical analysis of forward I–V characteristics of Au/InP interface restructured by antimony
- Accumulation Mode in Polycrystalline Silicon Thin-Film Transistors
- Numerical Modeling and Simulation of Output Parameters in Poly-Si Homojunction nip (or pin) Solar Cells
- Characterization of interface states at Au/InSb/InP(100) Schottky barrier diodes as a function of frequency
- Experiments in MIS structure based on germanium and improvements of the interfacial properties
- Effect of InSb layer on the interfacial and electrical properties in the structures based on InP
- Electrical characterization of the Au/InP(100) and Au/InSb/InP(100) structures
- Electrical study of the Au/InSb/InP system
- C(V) characterization of metal/polysilicon/oxide/monosilicon structure
- Modelling of the Doping Effect on the Capacitance of the Metal/N-Polysilicon/Oxide/N-Silicon Structure
- Characterization of the M.S structure by the surface photoelectrical voltage method
مجلات النشر
- Semiconductors × 7
- Materials Science and Engineering C × 5
- DOAJ (DOAJ: Directory of Open Access Journals) × 4
- Applied Surface Science × 4
- Materials Science and Engineering B × 4
- Vacuum × 4
المنشورات حسب السنة
- 20264
- 202511
- 20243
- 20231
- 20223
- 20219
- 20208
- 20193
- 20186
- 20171
التعاون العلمي
المؤسسات الشريكة : Tissemsilt University · Ziane Achour University of Djelfa · Renewable Energy Development Center · Institut Pascal · University of Eloued
بلدان المؤلفين المشاركين : فرنسا · إيطاليا · إسبانيا
المؤلفون المشاركون
- Boudali Akkal
- Abdelaziz Rabehi
- Arslane Hatem Kacha
- Halima Mazari
- Baya Zebentout
- Nadia Benseddik
- Kheira Ameur
- Schahrazade Tizi
- Hicham Helal
- A. Talbi
- Abdelmalek Douara
- Nawal Benyahya
البيانات البيبليوغرافية مصدرها OpenAlex (قاعدة مفتوحة).
لماذا تختارون Dzcademia؟
ملفات أكاديمية ومقالات ومداخلات علمية: امنحوا أبحاثكم حضوراً عاماً منظماً. تساعد البيانات الوصفية المدمجة محركات البحث ومساعدات الذكاء الاصطناعي على التعرف على أعمالكم وفهم مراجعها.
علّق عبر Google
سجّل الدخول عبر Google للتعليق مباشرة على هذه الصفحة.