الرئيسية › دليل الباحثين › Amel Chenouf
Amel Chenouf
الانتماء : Centre de Développement des Technologies Avancées
- 32منشورات (انتماء جزائري)
- 33مجموع المنشورات
- 190الاستشهادات
- 9مؤشر h
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إنشاء ملفي المجاني إضافة منشوراتيمجالات البحث
- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Silicon Carbide Semiconductor Technologies
- Copper Interconnects and Reliability
- Integrated Circuits and Semiconductor Failure Analysis
المنشورات (32)
- Single Pulse Charge Pumping Technique Improvement for Interface-States Profiling in the Channel of MOSFET Devices
- Study and Analysis of NBTI Effect on pMOSFET Using Fast Measurement Technique
- Fast Methods for Studying the Effect of Electrical Stress on SiO2 Dielectrics in Metal-Oxide-Semiconductor Field-Effect Transistors
- Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Pulsed Current-Voltage Characterization Technique: Design and Discussion
- Recovery investigation of NBTI-induced traps in n-MOSFET devices
- Sizing of the CMOS 6T‐SRAM cell for NBTI ageing mitigation
- Analysis of NBTI Degradation in nMOS-Capacitors and nMOSFETs
- On the turn-around phenomenon in n-MOS transistors under NBTI conditions
- On the Circuit-Level Reliability Degradation Due to AC NBTI Stress
- On the permanent component profiling of the negative bias temperature instability in p-MOSFET devices
- Charge Pumping, Geometric Component, and Degradation Parameter Extraction in MOSFET Devices
- Using the charge pumping geometric component to extract NBTI induced mobility degradation
- Investigation of interface, shallow and deep oxide traps under NBTI stress using charge pumping technique
- Does NBTI effect in MOS transistors depend on channel length?
- Investigation of NBTI degradation on power VDMOS transistors under magnetic field
- Reliability analysis of CMOS inverter subjected to AC & DC NBTI stresses
- Investigation of defect microstructures responsible for NBTI degradation using effective dipole moment extraction
- A propagation concept of negative bias temperature instability along the channel length in p-type metal oxide field effect transistor
- Investigating the NBTI effect on P- and N-substrate MOS capacitors and p-MOSFET transistors
- On the permanent components of negative bias temperature instability
- A New Method for Negative Bias Temperature Instability Assessment in P-Channel Metal Oxide Semiconductor Transistors
- Deep experimental investigation of NBTI impact on CMOS inverter reliability
- Two-point capacitance-voltage (TPCV) concept: A new method for NBTI characterization
- Does PMOS Vth shift wholly capture the degradation of CMOS inverter circuit under DC NBTI?
- On the fly oxide trap (otfot) concept: A new method for bias temperature instability characterization
- On-the-fly extraction method for interface-, oxide- trap and mobility degradation induced by NBTI stress
- A novel method based on capacitance-voltage for negative bias temperatures instability studies: Concept and results
- An accurate extraction methodology for NBTI induced degradation using charge pumping based methods
- Oxide trap annealing by H2 cracking at E' center under NBTI stress
- A new eye on NBTI-induced traps up to device lifetime using on the fly oxide trap method
- Design-kit development based upon ISsiT's CMOS 1µM process technology
- An efficient low-power buffer insertion with time and area constraints
المؤلفون المشاركون
- Boualem Djezzar
- Hakim Tahi
- Abdelmadjid Benabdelmoumene
- Mohamed Boubaaya
- Mohamed Goudjil
- Boumediene Zatout
- Mohamed Kechouane
- Dhiaelhak Messaoud
- Cherifa Tahanout
- Abdelkader Zitouni
- Abdelmadjid Benabdelmomene
- Abdelmadjid Benabedelmoumene
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