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Amel Chenouf
Affiliation : Centre de Développement des Technologies Avancées
- 32Publications (affiliation in Algeria)
- 33Total publications
- 190Citations
- 9h-index
Research profile
Amel Chenouf has 32 indexed publications (2010–2023). Their work appears mainly in “IEEE International Integrated Reliability Workshop final report”, “IEEE Transactions on Device and Materials Reliability” and “Solid-State Electronics”. Their most cited article, “Recovery investigation of NBTI-induced traps in n-MOSFET devices” (2020), has been cited 24 times. 4 of these publications date from the last three years of activity. Their work is co-authored with at least 12 researchers.
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Create my free profile Add my publicationsResearch areas
- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Silicon Carbide Semiconductor Technologies
- Copper Interconnects and Reliability
- Integrated Circuits and Semiconductor Failure Analysis
Publications (32)
- Single Pulse Charge Pumping Technique Improvement for Interface-States Profiling in the Channel of MOSFET Devices
- Study and Analysis of NBTI Effect on pMOSFET Using Fast Measurement Technique
- Fast Methods for Studying the Effect of Electrical Stress on SiO2 Dielectrics in Metal-Oxide-Semiconductor Field-Effect Transistors
- Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Pulsed Current-Voltage Characterization Technique: Design and Discussion
- Recovery investigation of NBTI-induced traps in n-MOSFET devices
- Sizing of the CMOS 6T‐SRAM cell for NBTI ageing mitigation
- Analysis of NBTI Degradation in nMOS-Capacitors and nMOSFETs
- On the turn-around phenomenon in n-MOS transistors under NBTI conditions
- On the Circuit-Level Reliability Degradation Due to AC NBTI Stress
- On the permanent component profiling of the negative bias temperature instability in p-MOSFET devices
- Charge Pumping, Geometric Component, and Degradation Parameter Extraction in MOSFET Devices
- Using the charge pumping geometric component to extract NBTI induced mobility degradation
- Investigation of interface, shallow and deep oxide traps under NBTI stress using charge pumping technique
- Does NBTI effect in MOS transistors depend on channel length?
- Investigation of NBTI degradation on power VDMOS transistors under magnetic field
- Reliability analysis of CMOS inverter subjected to AC & DC NBTI stresses
- Investigation of defect microstructures responsible for NBTI degradation using effective dipole moment extraction
- A propagation concept of negative bias temperature instability along the channel length in p-type metal oxide field effect transistor
- Investigating the NBTI effect on P- and N-substrate MOS capacitors and p-MOSFET transistors
- On the permanent components of negative bias temperature instability
- A New Method for Negative Bias Temperature Instability Assessment in P-Channel Metal Oxide Semiconductor Transistors
- Deep experimental investigation of NBTI impact on CMOS inverter reliability
- Two-point capacitance-voltage (TPCV) concept: A new method for NBTI characterization
- Does PMOS Vth shift wholly capture the degradation of CMOS inverter circuit under DC NBTI?
- On the fly oxide trap (otfot) concept: A new method for bias temperature instability characterization
- On-the-fly extraction method for interface-, oxide- trap and mobility degradation induced by NBTI stress
- A novel method based on capacitance-voltage for negative bias temperatures instability studies: Concept and results
- An accurate extraction methodology for NBTI induced degradation using charge pumping based methods
- Oxide trap annealing by H2 cracking at E' center under NBTI stress
- A new eye on NBTI-induced traps up to device lifetime using on the fly oxide trap method
- Design-kit development based upon ISsiT's CMOS 1µM process technology
- An efficient low-power buffer insertion with time and area constraints
Publication venues
- IEEE International Integrated Reliability Workshop final report × 5
- IEEE Transactions on Device and Materials Reliability × 4
- Solid-State Electronics × 3
- Instruments and Experimental Techniques × 2
- Microelectronics Reliability × 2
- International Design and Test Workshop (IDT) × 2
Publications per year
- 20234
- 20202
- 20181
- 20162
- 20153
- 20145
- 20133
- 201210
- 20102
Collaborations
Partner institutions : University of Boumerdes · University of Sciences and Technology Houari Boumediene
Co-authors
- Boualem Djezzar
- Hakim Tahi
- Abdelmadjid Benabdelmoumene
- Mohamed Boubaaya
- Mohamed Goudjil
- Boumediene Zatout
- Mohamed Kechouane
- Dhiaelhak Messaoud
- Cherifa Tahanout
- Abdelkader Zitouni
- Abdelmadjid Benabdelmomene
- Abdelmadjid Benabedelmoumene
Bibliographic data from OpenAlex (open database).
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