الرئيسية › دليل الباحثين › Hervé Morel
Hervé Morel
الانتماء : Lyon 1 Université · École Centrale de Lyon · Centre National de la Recherche Scientifique · Laboratoire Ampère · Institut National des Sciences Appliquées de Lyon
- 44منشورات (انتماء فرنسي)
- 309مجموع المنشورات
- 3272الاستشهادات
- 24مؤشر h
الملف البحثي
لدى Hervé Morel 44 منشور(ات) مفهرسة (2000–2026). تُنشر أعماله أساسًا في «International Journal of Numerical Modelling Electronic Networks Devices and Fields»، «The European Physical Journal Applied Physics» و«IEEE Transactions on Power Electronics». أكثر مقالاته استشهادًا هو «On the Extraction of PiN Diode Design Parameters for Validation of Integrated Power Converter Design» (2005)، وقد استُشهد به 62 مرة. شارك في تأليف أعماله 12 باحثًا على الأقل، منهم باحثون من مؤسسات في تونس، الجزائر.
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إنشاء ملفي المجاني إضافة منشوراتيمجالات البحث
- Silicon Carbide Semiconductor Technologies
- GaN-based semiconductor devices and materials
- Advanced DC-DC Converters
- Multilevel Inverters and Converters
- Semiconductor materials and interfaces
المنشورات (44)
- Electro-Optical Voltage Probe on the Pockels Effect: Experimental Validation Up to 4-kV
- Control Strategy and Impact of Meshed DC Micro-grid in the Middle East
- Analysis and modelling of the role of temperature in the static forward characteristics of an IGBT
- Dynamic Circuit Model of SiC VJFET For Power Integrated Circuit Design
- A spiral planar inductor: A n experimentally verified physically based model for frequency and time domains
- The Role of a Wiring Model in Switching Cell Transients: the PiN Diode Turn-off Case
- An exprimental procedure to extract the tq parameter of thyristors
- A complete switching cell model for fine power devices simulation
- On the extraction of the design parameters of power BJTs
- An Electrothermal Behavior Study of the Power PiN Diode
- A Detailed Extraction Procedure of Thyristor Design Parameters
- A Novel Approach to Accurately Determine the $t_{q}$ Parameter of Thyristors
- Effect of the base negative drive on the turn-off transient behavior of Si and 4H-SiC power BJTs
- A Novel Approach to Extract the Thyristor Design Parameters for Designing of Power Electronic Systems
- LVDC: An Efficient Energy Solution for On-Grid Photovoltaic Applications
- Development of a physically-based planar inductors VHDL-AMS model for integrated power converter design
- An advanced VHDL-AMS PiN diode model: towards simulation-based design of power converters
- Measurement and numerical analysis of C-V characteristics for normally-on SiCED-JFET
- Bi-objective sizing optimization of power converter using genetic algorithms
- A physically based diode model for circuit simulation
- Temperature dependence of silicon and silicon carbide power devices: An experimental analysis
- Silicon–carbide junction field effect transistor built-in diode: an experimentally verified electrical model
- Optimal design of power converter using multi-objective genetic algorithm
- On the role of the wiring parasitic inductance for optimum efficient converter
- Nonlinear average modeling of multilevel converters
- Inverse Models of Voltage and Current Probes
- SiC-Junction Field Effect Transistor Temperature Sensor: Theoretical Analysis and Experimental Validation
- Analysis of Power Switching Losses Accounting Probe Modeling
- Characterization, Modeling and Design Parameters Identification of Silicon Carbide Junction Field Effect Transistor for Temperature Sensor Applications
- Toward SiC-JFETs modelling with temperature dependence
- Modelling, analysis, and experimental study of SiC JFET body diode
- SiC-VJFETs power switching devices: an improved model and parameter optimization technique
- On the Role of the N–N$^{+}$ Junction Doping Profile of a PIN Diode on Its Turn-Off Transient Behavior
- Determination of Ambipolar Lifetime and Epilayer Thickness of 5kV SiC Bipolar Devices by Transient Switching Studies
- Experimental Analysis of Punch-Through Conditions in Power $P$-$I$-$N$ Diodes
- A novel approach to extract accurate design parameters of PiN diode
- Advanced averaged model of PWM-Switch operating in CCM and DCM conduction modes
- Electrical characterization of 5kV SiC bipolar diodes in switching transient regime
- A novel design approach for the epitaxial layer for 4H-SiC and 6H-SiC power bipolar devices
- On the Extraction of PiN Diode Design Parameters for Validation of Integrated Power Converter Design
- Role of the temperature distribution on the PN junction behaviour in the electro‐thermal simulation
- STUDY OF A SILICON POWER DIODE USING A TIME DEPENDENT HYDRODYNAMIC MODEL
- On the validity of the standard SPICE model of the diode for simulation in power electronics
- Electrothermal modeling of IGBTs: application to short-circuit conditions
مجلات النشر
- International Journal of Numerical Modelling Electronic Networks Devices and Fields × 5
- The European Physical Journal Applied Physics × 5
- IEEE Transactions on Power Electronics × 4
- IEEE Transactions on Industrial Electronics × 3
- HAL × 3
- International Conference on Engineering & MIS (ICEMIS) × 2
المنشورات حسب السنة
- 20261
- 20192
- 20181
- 20177
- 20161
- 20151
- 20145
- 20132
- 20125
- 20112
التعاون العلمي
المؤسسات الشريكة : Université de Lyon · University of Monastir · National Engineering School of Tunis · University of Carthage · Tunis El Manar University
بلدان المؤلفين المشاركين : تونس · الجزائر
المؤلفون المشاركون
- Tarek Ben Salah
- Bruno Allard
- Christophe Raynaud
- Dominique Bergogne
- Cyril Buttay
- Damien Risaletto
- Hatem Garrab
- Dominique Planson
- Samien Risaletto
- J.P. Chante
- Guy Clerc
- Jean‐Michel Guichon
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