الرئيسية › دليل الباحثين › Atef Jedidi

Atef Jedidi

الانتماء : University of Monastir · University of Sousse

• 11منشورات (انتماء تونسي)
• 12مجموع المنشورات
• 41الاستشهادات
• 4مؤشر h

OpenAlex

مجالات البحث

• Silicon Carbide Semiconductor Technologies
• Electromagnetic Compatibility and Noise Suppression
• Electric Power Systems and Control
• GaN-based semiconductor devices and materials
• Advanced DC-DC Converters

المنشورات (11)

• The Role of a Wiring Model in Switching Cell Transients: the PiN Diode Turn-off Case
  2017 · Journal of Power Electronics · استُشهد به 5 مرة
• An exprimental procedure to extract the tq parameter of thyristors
  2017 · International Conference on Engineering & MIS (ICEMIS) · استُشهد به 2 مرة
• On the extraction of the design parameters of power BJTs
  2017 · International Conference on Control, Automation and Diagnosis (ICCAD)
• An Electrothermal Behavior Study of the Power PiN Diode
  2017 · Lecture notes in networks and systems
• A Detailed Extraction Procedure of Thyristor Design Parameters
  2017 · Lecture notes in networks and systems
• A Novel Approach to Accurately Determine the $t_{q}$ Parameter of Thyristors
  2016 · IEEE Transactions on Industrial Electronics · استُشهد به 10 مرة
• The advantage of silicon carbide material in designing of power bipolar junction transistors
  2015 · International Multi-Conference on Systems, Signals & Devices (SSD) · استُشهد به 4 مرة
• Effect of the base negative drive on the turn-off transient behavior of Si and 4H-SiC power BJTs
  2015 · International Conference on Sciences and Techniques of Automatic Control and Computer Engineering
• A Novel Approach to Extract the Thyristor Design Parameters for Designing of Power Electronic Systems
  2014 · IEEE Transactions on Industrial Electronics · استُشهد به 17 مرة
• A comparative study between 4H-SiC and silicon power PiN diode having the same breakdown voltage 4KV
  2013 · International Conference on Electrical Engineering and Software Applications · استُشهد به 2 مرة
• A comparison between turn-off time of 4H-SiC and silicon power thyristor having the same breakdown voltage 5kV
  2013 · International Conference on Sciences and Techniques of Automatic Control and Computer Engineering · استُشهد به 1 مرة

مجلات النشر

• Lecture notes in networks and systems × 2
• IEEE Transactions on Industrial Electronics × 2
• International Conference on Sciences and Techniques of Automatic Control and Computer Engineering × 2
• Journal of Power Electronics × 1
• International Conference on Engineering & MIS (ICEMIS) × 1
• International Conference on Control, Automation and Diagnosis (ICCAD) × 1

المنشورات حسب السنة

• 20175
• 20161
• 20152
• 20141
• 20132

التعاون العلمي

المؤسسات الشريكة : Centre de Recherche en Microelectronique et Nanotechnologie · Laboratoire Ampère

بلدان المؤلفين المشاركين : فرنسا

المؤلفون المشاركون

• Hatem Garrab
• Kamel Besbes
• Mehrez Oueslati
• Hervé Morel

البيانات البيبليوغرافية مصدرها OpenAlex (قاعدة مفتوحة).