الرئيسية › دليل الباحثين › A. Ouerdane
A. Ouerdane
الانتماء : Université Djilali Bounaama Khemis Miliana
- 35منشورات (انتماء جزائري)
- 37مجموع المنشورات
- 438الاستشهادات
- 10مؤشر h
الملف البحثي
لدى A. Ouerdane 35 منشور(ات) مفهرسة (2006–2024). تُنشر أعماله أساسًا في «Surface Review and Letters»، «Applied Surface Science» و«IOP Conference Series Materials Science and Engineering». أكثر مقالاته استشهادًا هو «Insight into the photoluminescence and morphological characteristics of transition metals (TM = Mn, Ni, Co, Cu)-doped ZnO semiconductor: a c» (2023)، وقد استُشهد به 70 مرة. 7 من هذه المنشورات تعود إلى آخر ثلاث سنوات من النشاط. شارك في تأليف أعماله 12 باحثًا على الأقل، منهم باحثون من مؤسسات في فرنسا.
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إنشاء ملفي المجاني إضافة منشوراتيمجالات البحث
- ZnO doping and properties
- Electron and X-Ray Spectroscopy Techniques
- Semiconductor materials and interfaces
- Ion-surface interactions and analysis
- GaN-based semiconductor devices and materials
المنشورات (35)
- A DFT calculation of electronic structures, magnetic, and thermoelectric properties of the new equiatomic quaternary Heusler alloy RuTiCrSi
- Insight into the photoluminescence and morphological characteristics of transition metals (TM = Mn, Ni, Co, Cu)-doped ZnO semiconductor: a comparative study
- Improving optical and morphological properties of Mn-doped ZnO via Ar ion sputtering followed by high-temperature UHV annealing
- Effect of slight cobalt incorporation on the chemical, structural, morphological, optoelectronic, and photocatalytic properties of ZnO thin film
- IMPACT OF INDIUM DOPING ON ZnO THIN FILM SUBJECTED TO APPROPRIATE UHV TREATMENT CHARACTERIZED BY XPS, XRD, AND PL TECHNIQUES
- A Comparative Study of Un-Doped ZnO and in Doping ZnO Thin Films with Various Concentrations, Subjected to Appropriate UHV Treatment and Characterized by Sensitive Spectroscopy Techniques XPS, AES, Reels and PL
- Retraction Note: Investigating the sensing properties of SnO2 nanoparticles doped with gold
- Electronic and optical properties of ZnSe by theoretical simulation TB-mBJ (Tran-Blaha modified Becke Johnson) associated to analysis techniques XPS (X-Ray Photoelectron Spectroscopy); REELS (Reflective Electron Energy Loss Spectroscopy) and PLS (Photoluminescence Spectroscopy)
- First principles calculation of structural, electronic and optical properties of K-doped ZnO
- RETRACTED ARTICLE: Investigating the sensing properties of SnO2 nanoparticles doped with gold
- Chemical, morphological and optical properties of undoped and Cu-doped ZnO thin films submitted to UHV treatment
- Effect of indium incorporation, stimulated by UHV treatment, on the chemical, optical and electronic properties of ZnO thin film
- XPS, AES AND UPS INVESTIGATION OF SnO2/Si AND DFT-BASED THEORETICAL STUDY WITHIN THE mBJ-GGA SCHEME
- Surface stoichiometry analysis by AES, EELS spectroscopy and AFM microscopy in UHV atmosphere of SnO 2 thin film
- Characterization of Ag Doped SnO2 for Gas Sensing Application
- Investigation of the properties of Sb doping on tin oxide SNO2materials for technological applications
- Investigation of InGaAsN for laser diode application
- Nitrogen Effect on the Frequency Shift in Indium-GaAsN Quantum Wells Laser
- THE INVESTIGATION OF THE ELECTRON BEHAVIOR OF SnO 2 BY THE SIMULATION METHODS GGA AND mBJ ASSOCIATED WITH THE EELS EXPERIMENTAL ANALYSIS TECHNIQUE
- Computational Simulation of Ultraviolet ZnO Diode Laser
- STUDY BY AES AND EELS OF InP , InSb , InPO4 AND In x Ga 1-x As SUBMITTED TO ELECTRON IRRADIATION
- GROWTH OF In2O3 ON In METAL AND ON InSb BY THE ELECTRON IRRADIATION
- AES, EELS and TRIM simulation method study of InP(100) subjected to Ar+, He+and H+ions bombardment.
- Study by AES, EELS Spectroscopy of electron Irradiation on InP and InPO4/InP in comparison with Monte Carlo simulation
- AES and EELS tools associated to TRIM simulation methods to study nanostructures on III-V semiconductor surfaces
- Investigation by AES, EELS and TRIM Simulation Method of InP(100) Subjected to He+ and H+ Ions Bombardment
- ChemInform Abstract: Structural Phase Transition, Elastic Properties and Electronic Properties of Chalcopyrite CuAlX2 (X: S, Se, Te)
- Structural phase transition, elastic properties and electronic properties of chalcopyrite CuAlX2 (X=S, Se, Te)
- Investigation by EELS and TRIM simulation method of the interaction of Ar+ and N+ ions with the InP compound
- AES, EELS and TRIM investigation of InSb and InP compounds subjected to Ar+ ions bombardment
- Study by EELS and EPES of the stability of InPO4/InP system
- Study by AES and EELS spectroscopies of antimony and phosphorous evaporated on massive indium and on cleaned InP
- Study by AES and EELS spectroscopies of antimony and phosphorus evaporated on massive indium and on cleaned InP
- The behaviour of ternary compounds InGaAs and GaAsN subjected to electron irradiation.
- The behaviour of ternary compounds InGaAs and GaAsN subjected to electron irradiation
مجلات النشر
- Surface Review and Letters × 5
- Applied Surface Science × 5
- IOP Conference Series Materials Science and Engineering × 4
- Optical Materials × 2
- Journal of Alloys and Compounds × 2
- Applied Physics A × 2
المنشورات حسب السنة
- 20241
- 20232
- 20224
- 20213
- 20203
- 20182
- 20162
- 20141
- 20132
- 20125
التعاون العلمي
المؤسسات الشريكة : École Nationale Polytechnique d'Oran · Université IBN Khaldoun Tiaret · Hassiba Benbouali University of Chlef · Université Djilali de Sidi Bel Abbès · Université des Sciences et de la Technologie d'Oran Mohamed Boudiaf
بلدان المؤلفين المشاركين : فرنسا
المؤلفون المشاركون
- M’hamed Bouslama
- Mohamed Toufik Ghaffour
- Abdelkader Abdellaoui
- Bachir Kharroubi
- M’hammed Bouslama
- M’hamed Guezzoul
- Mahfoud Abdelkrim
- Abdelhak Baizid
- Azzeddine Mokadem
- Zakia Lounis
- Mahmoud Bedrouni
- Kheira Hamaida
البيانات البيبليوغرافية مصدرها OpenAlex (قاعدة مفتوحة).
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