Accueil › Annuaire des chercheurs › A. Ouerdane
A. Ouerdane
Affiliation : Université Djilali Bounaama Khemis Miliana
- 35Publications (affiliation algérienne)
- 37Publications au total
- 438Citations
- 10Indice h
Profil de recherche
A. Ouerdane compte 35 publications référencées (2006–2024). Ses travaux paraissent principalement dans « Surface Review and Letters », « Applied Surface Science » et « IOP Conference Series Materials Science and Engineering ». Son article le plus cité, « Insight into the photoluminescence and morphological characteristics of transition metals (TM = Mn, Ni, Co, Cu)-doped ZnO semiconductor: a c » (2023), a été cité 70 fois. 7 de ces publications datent des trois dernières années d’activité. Ses travaux sont cosignés avec au moins 12 chercheurs, notamment dans des établissements de France.
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Créer mon profil gratuit Ajouter mes publicationsDomaines de recherche
- ZnO doping and properties
- Electron and X-Ray Spectroscopy Techniques
- Semiconductor materials and interfaces
- Ion-surface interactions and analysis
- GaN-based semiconductor devices and materials
Publications (35)
- A DFT calculation of electronic structures, magnetic, and thermoelectric properties of the new equiatomic quaternary Heusler alloy RuTiCrSi
- Insight into the photoluminescence and morphological characteristics of transition metals (TM = Mn, Ni, Co, Cu)-doped ZnO semiconductor: a comparative study
- Improving optical and morphological properties of Mn-doped ZnO via Ar ion sputtering followed by high-temperature UHV annealing
- Effect of slight cobalt incorporation on the chemical, structural, morphological, optoelectronic, and photocatalytic properties of ZnO thin film
- IMPACT OF INDIUM DOPING ON ZnO THIN FILM SUBJECTED TO APPROPRIATE UHV TREATMENT CHARACTERIZED BY XPS, XRD, AND PL TECHNIQUES
- A Comparative Study of Un-Doped ZnO and in Doping ZnO Thin Films with Various Concentrations, Subjected to Appropriate UHV Treatment and Characterized by Sensitive Spectroscopy Techniques XPS, AES, Reels and PL
- Retraction Note: Investigating the sensing properties of SnO2 nanoparticles doped with gold
- Electronic and optical properties of ZnSe by theoretical simulation TB-mBJ (Tran-Blaha modified Becke Johnson) associated to analysis techniques XPS (X-Ray Photoelectron Spectroscopy); REELS (Reflective Electron Energy Loss Spectroscopy) and PLS (Photoluminescence Spectroscopy)
- First principles calculation of structural, electronic and optical properties of K-doped ZnO
- RETRACTED ARTICLE: Investigating the sensing properties of SnO2 nanoparticles doped with gold
- Chemical, morphological and optical properties of undoped and Cu-doped ZnO thin films submitted to UHV treatment
- Effect of indium incorporation, stimulated by UHV treatment, on the chemical, optical and electronic properties of ZnO thin film
- XPS, AES AND UPS INVESTIGATION OF SnO2/Si AND DFT-BASED THEORETICAL STUDY WITHIN THE mBJ-GGA SCHEME
- Surface stoichiometry analysis by AES, EELS spectroscopy and AFM microscopy in UHV atmosphere of SnO 2 thin film
- Characterization of Ag Doped SnO2 for Gas Sensing Application
- Investigation of the properties of Sb doping on tin oxide SNO2materials for technological applications
- Investigation of InGaAsN for laser diode application
- Nitrogen Effect on the Frequency Shift in Indium-GaAsN Quantum Wells Laser
- THE INVESTIGATION OF THE ELECTRON BEHAVIOR OF SnO 2 BY THE SIMULATION METHODS GGA AND mBJ ASSOCIATED WITH THE EELS EXPERIMENTAL ANALYSIS TECHNIQUE
- Computational Simulation of Ultraviolet ZnO Diode Laser
- STUDY BY AES AND EELS OF InP , InSb , InPO4 AND In x Ga 1-x As SUBMITTED TO ELECTRON IRRADIATION
- GROWTH OF In2O3 ON In METAL AND ON InSb BY THE ELECTRON IRRADIATION
- AES, EELS and TRIM simulation method study of InP(100) subjected to Ar+, He+and H+ions bombardment.
- Study by AES, EELS Spectroscopy of electron Irradiation on InP and InPO4/InP in comparison with Monte Carlo simulation
- AES and EELS tools associated to TRIM simulation methods to study nanostructures on III-V semiconductor surfaces
- Investigation by AES, EELS and TRIM Simulation Method of InP(100) Subjected to He+ and H+ Ions Bombardment
- ChemInform Abstract: Structural Phase Transition, Elastic Properties and Electronic Properties of Chalcopyrite CuAlX2 (X: S, Se, Te)
- Structural phase transition, elastic properties and electronic properties of chalcopyrite CuAlX2 (X=S, Se, Te)
- Investigation by EELS and TRIM simulation method of the interaction of Ar+ and N+ ions with the InP compound
- AES, EELS and TRIM investigation of InSb and InP compounds subjected to Ar+ ions bombardment
- Study by EELS and EPES of the stability of InPO4/InP system
- Study by AES and EELS spectroscopies of antimony and phosphorous evaporated on massive indium and on cleaned InP
- Study by AES and EELS spectroscopies of antimony and phosphorus evaporated on massive indium and on cleaned InP
- The behaviour of ternary compounds InGaAs and GaAsN subjected to electron irradiation.
- The behaviour of ternary compounds InGaAs and GaAsN subjected to electron irradiation
Revues de publication
- Surface Review and Letters × 5
- Applied Surface Science × 5
- IOP Conference Series Materials Science and Engineering × 4
- Optical Materials × 2
- Journal of Alloys and Compounds × 2
- Applied Physics A × 2
Publications par année
- 20241
- 20232
- 20224
- 20213
- 20203
- 20182
- 20162
- 20141
- 20132
- 20125
Collaborations
Établissements partenaires : École Nationale Polytechnique d'Oran · Université IBN Khaldoun Tiaret · Hassiba Benbouali University of Chlef · Université Djilali de Sidi Bel Abbès · Université des Sciences et de la Technologie d'Oran Mohamed Boudiaf
Pays des co-auteurs : France
Co-auteurs
- M’hamed Bouslama
- Mohamed Toufik Ghaffour
- Abdelkader Abdellaoui
- Bachir Kharroubi
- M’hammed Bouslama
- M’hamed Guezzoul
- Mahfoud Abdelkrim
- Abdelhak Baizid
- Azzeddine Mokadem
- Zakia Lounis
- Mahmoud Bedrouni
- Kheira Hamaida
Données bibliographiques issues d’OpenAlex (base ouverte).
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