الرئيسية › دليل الباحثين › Houcine Mejri
Houcine Mejri
الانتماء : University of Monastir
- 43منشورات (انتماء تونسي)
- 54مجموع المنشورات
- 669الاستشهادات
- 15مؤشر h
الملف البحثي
لدى Houcine Mejri 43 منشور(ات) مفهرسة (1990–2019). تُنشر أعماله أساسًا في «Journal of Applied Physics»، «Journal of Physics Condensed Matter» و«Materials Science in Semiconductor Processing». أكثر مقالاته استشهادًا هو «Infrared to visible up-conversion study for erbium-doped zinc tellurite glasses» (2000)، وقد استُشهد به 82 مرة. 3 من هذه المنشورات تعود إلى آخر ثلاث سنوات من النشاط. شارك في تأليف أعماله 12 باحثًا على الأقل، منهم باحثون من مؤسسات في فرنسا، الجزائر.
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إنشاء ملفي المجاني إضافة منشوراتيمجالات البحث
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces
- GaN-based semiconductor devices and materials
- Advancements in Semiconductor Devices and Circuit Design
- Silicon Carbide Semiconductor Technologies
المنشورات (43)
- Effect of temperature on electronic and electrical behavior of InGaN double hetero-junction p-i-n solar cells
- Modeling of adsorption isotherms of reactive red RR-120 on spirulina platensis by statistical physics formalism involving interaction effect between adsorbate molecules
- Nanoscale heat transfer in MOSFET transistor with high-k dielectrics using a non linear DPL heat conduction model
- Modeling of polarization charge in N-face InGaN/GaN MQW solar cells
- Electronic and transport properties of AlInN/AlN/GaN high electron mobility transistors
- Effect of Passivation on Microwave Power Performances of AlGaN/GaN/Si HEMTs
- Direct-current and radio-frequency characteristics of passivated AlGaN/GaN/Si high electron mobility transistors
- Electron transport in passivated AlGaN/GaN/Si HEMTs
- Effects of a magnetic field environment on quantum cloning of qubits
- Thermal effects in AlGaN/GaN/Si high electron mobility transistors
- Electrical field and temperature effects in 2D‐2D resonant tunneling diodes based on cubic InGaN/AlGaN
- The relative entropy as a tool to analyze the intrusion based on Bužek-Hillery machine
- The electronic states calculated using the sinusoidal potential for Cd1−xZnxS quantum dot superlattices
- The Excited Electronic States Calculated for Cd1−xZnxS Quantum Dots Grown by the Sol‐Gel Technique
- Self-heating and trapping effects in AlGaN/GaN heterojunction field-effect transistors
- The electronic band parameters calculated by the Kronig–Penney method for Cd1−xZnxS quantum dot superlattices
- Optical nonlinearities in delta-doped AlGaN/GaN quantum well heterostructures
- Refractive index changes in AlGaN/GaN heterostructure field-effect transistors
- Back doping design in delta-doped AlGaN/GaN heterostructure field-effect transistors
- Electronic and optical properties of Cd1-xZnxS nanocrystals
- Electronic properties of multi-quantum dot structures in Cd 1-xZn xS alloy semiconductors
- Modelling of visible and near infrared wavelength quantum well devices made of zinc-blende InxGa1 xN
- Evidence of threeDXcenters in Al0.28Ga0.72As:Si from Hall experiments
- Electronic structure calculations for Si/Si1−xGex multi-quantum well devices
- Stark effect modeling in strained n-type Si/Si1−xGex resonant tunneling heterostructures
- Electronic band parameters for zinc-blende Al1$minus$xGaxN
- Electronic structure and optical properties of Si1−xGex alloys
- Electric field effect on the spatially separated electron–hole recombination in an Si/Si1−xGex resonant tunneling heterostructure
- Effects of Activator Ion Concentration on the Upconversion Processes in Er3+-Doped TeO2-ZnO Glass
- Multiconfigurate Character of the DX Center and Statistical Analysis of Transport Data in Si-Doped AlxGa1?xAs
- Infrared to visible up-conversion study for erbium-doped zinc tellurite glasses
- Time-resolved luminescence data on the 1060 nm transition in Nd3+-doped zinc tellurite glasses
- Statistical analysis in the negative-U model of donors in AlxGa1−xAs:Si
- Growth temperature effects on the optical properties of Si modulation-doped InxGa1−xAs/InyAl1−yAs/InP heterostructures
- Theoretical and experimental studies in n-type modulation-doped InxGa1−xAs/InyAl1−yAs/InP magnetic sensors
- Self-consistent analysis of persistent photoconductivity data in Si δ-doped AlxGa1−xAs (x=0.32) superlattices
- Stark effect studied in -doped GaAs structures
- Effects of the DX center multiplicity on the transport properties of AlxGa1−xAs:Si
- Intrinsic and extrinsic radiative recombination processes in quantum wells
- Photocurrent and photoluminescence from quantum-confined electrons in periodically δ-doped Si-GaAs
- The DX center in Si-planar-doped AlxGa1−xAs (x=0.32)
- Time-resolved spectra of the 1.55-eV band in Ge-doped AlxGa1−xAs
- Photoluminescence studies of planar-doped AlxGa1-xAs
مجلات النشر
- Journal of Applied Physics × 11
- Journal of Physics Condensed Matter × 4
- Materials Science in Semiconductor Processing × 2
- Journal of Alloys and Compounds × 2
- Materials Science and Engineering C × 2
- The European Physical Journal B × 2
المنشورات حسب السنة
- 20191
- 20182
- 20152
- 20141
- 20132
- 20121
- 20113
- 20102
- 20091
- 20081
التعاون العلمي
المؤسسات الشريكة : Université d'Angers · Université Paris-Saclay · CentraleSupélec · Laboratoire Matériaux, Optique, Photonique et Systèmes · Université de Lorraine
بلدان المؤلفين المشاركين : فرنسا · الجزائر
المؤلفون المشاركون
- H. Mâaref
- Ahmed Selmi
- Moncef Said
- A. Bhouri
- F. Ben Zid
- Abir Sakly
- N. Safta
- Abdelmottaleb Ben Lamine
- A. Ben Jazia
- M. Gassoumi
- Hafedh Belmabrouk
- Lotfi Bouzaiene
البيانات البيبليوغرافية مصدرها OpenAlex (قاعدة مفتوحة).
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