Accueil › Annuaire des chercheurs › Houcine Mejri
Houcine Mejri
Affiliation : University of Monastir
- 43Publications (affiliation tunisienne)
- 54Publications au total
- 669Citations
- 15Indice h
Profil de recherche
Houcine Mejri compte 43 publications référencées (1990–2019). Ses travaux paraissent principalement dans « Journal of Applied Physics », « Journal of Physics Condensed Matter » et « Materials Science in Semiconductor Processing ». Son article le plus cité, « Infrared to visible up-conversion study for erbium-doped zinc tellurite glasses » (2000), a été cité 82 fois. 3 de ces publications datent des trois dernières années d’activité. Ses travaux sont cosignés avec au moins 12 chercheurs, notamment dans des établissements de France, Algérie.
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Créer mon profil gratuit Ajouter mes publicationsDomaines de recherche
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces
- GaN-based semiconductor devices and materials
- Advancements in Semiconductor Devices and Circuit Design
- Silicon Carbide Semiconductor Technologies
Publications (43)
- Effect of temperature on electronic and electrical behavior of InGaN double hetero-junction p-i-n solar cells
- Modeling of adsorption isotherms of reactive red RR-120 on spirulina platensis by statistical physics formalism involving interaction effect between adsorbate molecules
- Nanoscale heat transfer in MOSFET transistor with high-k dielectrics using a non linear DPL heat conduction model
- Modeling of polarization charge in N-face InGaN/GaN MQW solar cells
- Electronic and transport properties of AlInN/AlN/GaN high electron mobility transistors
- Effect of Passivation on Microwave Power Performances of AlGaN/GaN/Si HEMTs
- Direct-current and radio-frequency characteristics of passivated AlGaN/GaN/Si high electron mobility transistors
- Electron transport in passivated AlGaN/GaN/Si HEMTs
- Effects of a magnetic field environment on quantum cloning of qubits
- Thermal effects in AlGaN/GaN/Si high electron mobility transistors
- Electrical field and temperature effects in 2D‐2D resonant tunneling diodes based on cubic InGaN/AlGaN
- The relative entropy as a tool to analyze the intrusion based on Bužek-Hillery machine
- The electronic states calculated using the sinusoidal potential for Cd1−xZnxS quantum dot superlattices
- The Excited Electronic States Calculated for Cd1−xZnxS Quantum Dots Grown by the Sol‐Gel Technique
- Self-heating and trapping effects in AlGaN/GaN heterojunction field-effect transistors
- The electronic band parameters calculated by the Kronig–Penney method for Cd1−xZnxS quantum dot superlattices
- Optical nonlinearities in delta-doped AlGaN/GaN quantum well heterostructures
- Refractive index changes in AlGaN/GaN heterostructure field-effect transistors
- Back doping design in delta-doped AlGaN/GaN heterostructure field-effect transistors
- Electronic and optical properties of Cd1-xZnxS nanocrystals
- Electronic properties of multi-quantum dot structures in Cd 1-xZn xS alloy semiconductors
- Modelling of visible and near infrared wavelength quantum well devices made of zinc-blende InxGa1 xN
- Evidence of threeDXcenters in Al0.28Ga0.72As:Si from Hall experiments
- Electronic structure calculations for Si/Si1−xGex multi-quantum well devices
- Stark effect modeling in strained n-type Si/Si1−xGex resonant tunneling heterostructures
- Electronic band parameters for zinc-blende Al1$minus$xGaxN
- Electronic structure and optical properties of Si1−xGex alloys
- Electric field effect on the spatially separated electron–hole recombination in an Si/Si1−xGex resonant tunneling heterostructure
- Effects of Activator Ion Concentration on the Upconversion Processes in Er3+-Doped TeO2-ZnO Glass
- Multiconfigurate Character of the DX Center and Statistical Analysis of Transport Data in Si-Doped AlxGa1?xAs
- Infrared to visible up-conversion study for erbium-doped zinc tellurite glasses
- Time-resolved luminescence data on the 1060 nm transition in Nd3+-doped zinc tellurite glasses
- Statistical analysis in the negative-U model of donors in AlxGa1−xAs:Si
- Growth temperature effects on the optical properties of Si modulation-doped InxGa1−xAs/InyAl1−yAs/InP heterostructures
- Theoretical and experimental studies in n-type modulation-doped InxGa1−xAs/InyAl1−yAs/InP magnetic sensors
- Self-consistent analysis of persistent photoconductivity data in Si δ-doped AlxGa1−xAs (x=0.32) superlattices
- Stark effect studied in -doped GaAs structures
- Effects of the DX center multiplicity on the transport properties of AlxGa1−xAs:Si
- Intrinsic and extrinsic radiative recombination processes in quantum wells
- Photocurrent and photoluminescence from quantum-confined electrons in periodically δ-doped Si-GaAs
- The DX center in Si-planar-doped AlxGa1−xAs (x=0.32)
- Time-resolved spectra of the 1.55-eV band in Ge-doped AlxGa1−xAs
- Photoluminescence studies of planar-doped AlxGa1-xAs
Revues de publication
- Journal of Applied Physics × 11
- Journal of Physics Condensed Matter × 4
- Materials Science in Semiconductor Processing × 2
- Journal of Alloys and Compounds × 2
- Materials Science and Engineering C × 2
- The European Physical Journal B × 2
Publications par année
- 20191
- 20182
- 20152
- 20141
- 20132
- 20121
- 20113
- 20102
- 20091
- 20081
Collaborations
Établissements partenaires : Université d'Angers · Université Paris-Saclay · CentraleSupélec · Laboratoire Matériaux, Optique, Photonique et Systèmes · Université de Lorraine
Pays des co-auteurs : France · Algérie
Co-auteurs
- H. Mâaref
- Ahmed Selmi
- Moncef Said
- A. Bhouri
- F. Ben Zid
- Abir Sakly
- N. Safta
- Abdelmottaleb Ben Lamine
- A. Ben Jazia
- M. Gassoumi
- Hafedh Belmabrouk
- Lotfi Bouzaiene
Données bibliographiques issues d’OpenAlex (base ouverte).
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