الرئيسية › دليل الباحثين › M. Aghoutane

M. Aghoutane

الانتماء : Abdelmalek Essaâdi University

• 11منشورات (انتماء مغربي)
• 12مجموع المنشورات
• 48الاستشهادات
• 4مؤشر h

OpenAlex

مجالات البحث

• Advancements in Semiconductor Devices and Circuit Design
• Microwave Engineering and Waveguides
• Quantum and electron transport phenomena
• Semiconductor Quantum Structures and Devices
• Antenna Design and Analysis

المنشورات (11)

• Comparison of Wavelet Packet and Wavelet in Solving Arbitrary Array of Parallel Wires Integral Equations in Electromagnetics
  2020 · Advanced Electromagnetics · استُشهد به 4 مرة
• Analysis of Series and Shunt Rectifier Circuits Topologies
  2019 · International Conference on Wireless Technologies, Embedded and Intelligent Systems (WITS) · استُشهد به 5 مرة
• Modeling a Planar Coupled Microstrip Lines using various Wavelets and Method of Moments
  2019 · Advanced Electromagnetics · استُشهد به 1 مرة
• Improving the intrinsic cut-off frequency of gate-all-around quantum-wire transistors without channel length scaling
  2013 · Applied Physics Letters · استُشهد به 13 مرة
• Towards frequency performance improvement of emerging devices without length scaling
  2013 · Spanish Conference on Electron Devices
• EFFECT OF GATE-ALL-AROUND TRANSISTOR GEOMETRY ON THE HIGH-FREQUENCY NOISE: ANALYTICAL DISCUSSION
  2012 · Fluctuation and Noise Letters · استُشهد به 13 مرة
• Geometry engineering for the RF behavior of low-dimensional gate-all-around transistors
  2012 · International Workshop on Computational Electronics
• Study of the effect of device geometry on the AC behaviour of nanoelectronic devices
  2011 · Spanish Conference on Electron Devices
• Novel compact dual-and tri-band filters using stepped impedance resonators
  2010 · Mediterranean Microwave Symposium · استُشهد به 2 مرة
• Modelling of temperature and dispersion effects in MESFET and HEMT transistors
  2008 · International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) · استُشهد به 2 مرة
• Accurate large-signal single current source thermal model for GaAs MESFET/HEMT
  2007 · Electronics Letters · استُشهد به 7 مرة

مجلات النشر

• Advanced Electromagnetics × 2
• Spanish Conference on Electron Devices × 2
• International Conference on Wireless Technologies, Embedded and Intelligent Systems (WITS) × 1
• Applied Physics Letters × 1
• Fluctuation and Noise Letters × 1
• International Workshop on Computational Electronics × 1

المنشورات حسب السنة

• 20201
• 20192
• 20132
• 20122
• 20111
• 20101
• 20081
• 20071

التعاون العلمي

المؤسسات الشريكة : Universitat Autònoma de Barcelona

بلدان المؤلفين المشاركين : إسبانيا

المؤلفون المشاركون

• Naima Amar Touhami
• Mohamed Bayjja
• Gamil Alsharahi
• Moustapha El Bakkali
• Mohamed Essaaidi
• Rachida Moussa
• Mahmoud Moubadir
• Intissar Hamzi

البيانات البيبليوغرافية مصدرها OpenAlex (قاعدة مفتوحة).