Home › Researcher directory › M. Aghoutane
M. Aghoutane
Affiliation : Abdelmalek Essaâdi University
- 11Publications (affiliation in Morocco)
- 12Total publications
- 48Citations
- 4h-index
Research profile
M. Aghoutane has 11 indexed publications (2007–2020). Their work appears mainly in “Advanced Electromagnetics”, “Spanish Conference on Electron Devices” and “International Conference on Wireless Technologies, Embedded and Intelligent Systems (WITS)”. Their most cited article, “Improving the intrinsic cut-off frequency of gate-all-around quantum-wire transistors without channel length scaling” (2013), has been cited 13 times. 3 of these publications date from the last three years of activity. Their work is co-authored with at least 8 researchers, including institutions in Spain.
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Create my free profile Add my publicationsResearch areas
- Advancements in Semiconductor Devices and Circuit Design
- Microwave Engineering and Waveguides
- Quantum and electron transport phenomena
- Semiconductor Quantum Structures and Devices
- Antenna Design and Analysis
Publications (11)
- Comparison of Wavelet Packet and Wavelet in Solving Arbitrary Array of Parallel Wires Integral Equations in Electromagnetics
- Analysis of Series and Shunt Rectifier Circuits Topologies
- Modeling a Planar Coupled Microstrip Lines using various Wavelets and Method of Moments
- Improving the intrinsic cut-off frequency of gate-all-around quantum-wire transistors without channel length scaling
- Towards frequency performance improvement of emerging devices without length scaling
- EFFECT OF GATE-ALL-AROUND TRANSISTOR GEOMETRY ON THE HIGH-FREQUENCY NOISE: ANALYTICAL DISCUSSION
- Geometry engineering for the RF behavior of low-dimensional gate-all-around transistors
- Study of the effect of device geometry on the AC behaviour of nanoelectronic devices
- Novel compact dual-and tri-band filters using stepped impedance resonators
- Modelling of temperature and dispersion effects in MESFET and HEMT transistors
- Accurate large-signal single current source thermal model for GaAs MESFET/HEMT
Publication venues
- Advanced Electromagnetics × 2
- Spanish Conference on Electron Devices × 2
- International Conference on Wireless Technologies, Embedded and Intelligent Systems (WITS) × 1
- Applied Physics Letters × 1
- Fluctuation and Noise Letters × 1
- International Workshop on Computational Electronics × 1
Publications per year
- 20201
- 20192
- 20132
- 20122
- 20111
- 20101
- 20081
- 20071
Collaborations
Partner institutions : Universitat Autònoma de Barcelona
Co-authors’ countries : Spain
Co-authors
- Naima Amar Touhami
- Mohamed Bayjja
- Gamil Alsharahi
- Moustapha El Bakkali
- Mohamed Essaaidi
- Rachida Moussa
- Mahmoud Moubadir
- Intissar Hamzi
Bibliographic data from OpenAlex (open database).
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