الرئيسية › دليل الباحثين › Farida Mansour
Farida Mansour
الانتماء : University Frères Mentouri Constantine 1
- 39منشورات (انتماء جزائري)
- 52مجموع المنشورات
- 232الاستشهادات
- 9مؤشر h
الملف البحثي
لدى Farida Mansour 39 منشور(ات) مفهرسة (2001–2020). تُنشر أعماله أساسًا في «Materials Science in Semiconductor Processing»، «Revue Sciences Humaines (Université des Frères Mentouri Constantine 1)» و«International Conference on Microelectronics (ICM)». أكثر مقالاته استشهادًا هو «Boron Diffusion and Activation during Heat Treatment in Heavily Doped Polysilicon Thin Films for P+ Metal-Oxide-Semiconductor Transistors Ga» (2001)، وقد استُشهد به 24 مرة. 4 من هذه المنشورات تعود إلى آخر ثلاث سنوات من النشاط. شارك في تأليف أعماله 12 باحثًا على الأقل، منهم باحثون من مؤسسات في فرنسا.
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إنشاء ملفي المجاني إضافة منشوراتيمجالات البحث
- Semiconductor materials and devices
- Semiconductor materials and interfaces
- Silicon and Solar Cell Technologies
- Thin-Film Transistor Technologies
- Advancements in Semiconductor Devices and Circuit Design
المنشورات (39)
- Influence of Mg Doping Levels on the Sensing Properties of SnO2 Films
- Characterization of SnO2 Thin Films Fabricated by Chemical Spray Pyrolysis
- ZnO/Si heterojunction for low cost solar cell fabricated by chemical spray pyrolysis method
- Experimental Study Of The Boron Redistribution In Two Series Of Bilayer Films Silicon-Based
- SnO 2 thin film synthesis for organic vapors sensing at ambient temperature
- Structural and composition properties of ZnO thin films elaborated by spray pyrolysis
- Investigation on optical and physico-chemical properties of LPCVD SiOxNythin films
- Complex Boron Redistribution in P+ Doped-polysilicon / Nitrogen Doped Silicon Bi-layers during Activation Annealing
- Formation of silicon nanocrystals by thermal annealing of low-pressure chemical-vapor deposited amorphous SiNx (x=0.16) thin films
- FTIR investigations on X-N bonds of annealed PolySi/NIDOS films
- Study of Silicon Nanocrystals Formation in Annealed Amorphous In Situ Nitrogen Doped Silicon Thin Films Obtained by Low Pressure Chemical Vapor Deposition
- Complex boron redistribution kinetics in strongly doped polycrystalline‐silicon/nitrogen‐doped‐silicon thin bi‐layers
- Boron redistribution in strongly doped silicon thin Bi-layers gates
- Study of Nitrogen Effect on the Boron Diffusion during Heat Treatment in Polycrystalline Silicon/Nitrogen-Doped Silicon Thin Films
- Influence of the annealing condition on the BN bonds intensity detected by FTIR characterization
- Study of grains size distribution and electrical activity of heavily boron doped polysilicon thin films
- Segregation and Clustering Effects on Complex Boron Redistribution in Strongly Doped Polycrystalline-Silicon Layers
- Experimental study of the boron redistribution in bilayer films silicon-based by SIMS technique
- Nitrogen doped silicon films heavily boron implanted for MOS structures: Simulation and characterization
- Properties of non‐stoichiometric nitrogen doped LPCVD silicon thin films
- Physicochemical Characterization of Annealed PolySi/NIDOS/SiO2 Structures
- Modeling kink effect in the poly-Si TFTs under charge sheet approach
- A numerical analysis of the electrical characteristics of small-grains poly-Si TFTs
- MODELISATION DE L'EFFET DE LA PASSIVATION ARRIERE ET FRONTALE POUR L'OPTIMISATION DU RENDEMENT D'UNE CELLULE SOLAIRE À BASE DE SILICIUM POLYCRISTALLIN
- Boron diffusion and activation in polysilicon multilayer films for P+ MOS structure: Characterization and modeling
- Electrical and morphological characteristics of amorphous LPCVD Nitrogen Doped Silicon thin films after heat treatment
- MODELISATION ANALYTIQUE DE L’EFFET KINK DANS UN TRANSISTOR EN COUCHES MINCES A BASE DE POLYSILICIUM
- Effect of thermal annealing and nitrogen content on amorphous silicon thin‐film crystallization
- AN ADVANCED MODEL FOR DOPANT DIFFUSION IN HEAVILY IMPLANTED POLYCRYSTALLINE SILICON THIN FILMS
- Effect of Nitrogen on Boron doped Polysilicon Thin Films Properties
- Growth of Grains Effect on Boron Diffusion in Heavily Implanted Polysilicon Thin Films
- Growth of Grains Effect on Boron Diffusion in Heavily Implanted Polycrystalline silicon Thin Films
- An Advanced Model for Dopant Diffusion in Polycrystalline silicon during rapid thermal annealing
- Study of electrical and structural properties of boron doped polysilicon films with a low nitrogen content
- Grains-growth and clustering effects on boron diffusion in polysilicon during thermal post-implantation annealing.
- Effect of nitrogen on the diffusion and the activation of the boron implanted in polysilicon thin layers
- Study of nitrogen doped silicon films used for p+ polysilicon gates
- VARIATION DES COEFFICIENTS DE DIFFUSION ET D’ACTIVATION DU BORE DANS DES FILMS DE POLYSILICIUM SOUS L’EFFET DE LA SEGREGATION ET DU PIEGEAGE
- Boron Diffusion and Activation during Heat Treatment in Heavily Doped Polysilicon Thin Films for P+ Metal-Oxide-Semiconductor Transistors Gates
مجلات النشر
- Materials Science in Semiconductor Processing × 3
- Revue Sciences Humaines (Université des Frères Mentouri Constantine 1) × 3
- International Conference on Microelectronics (ICM) × 3
- International Conference on Advanced Electrical Engineering (ICAEE) × 2
- The European Physical Journal Applied Physics × 2
- Crystal Research and Technology × 2
المنشورات حسب السنة
- 20201
- 20193
- 20162
- 20142
- 20132
- 20123
- 20115
- 20101
- 20095
- 20083
التعاون العلمي
المؤسسات الشريكة : University of Jijel · University of Batna 1 · Centre National de la Recherche Scientifique · Laboratoire d'Analyse et d'Architecture des Systèmes · Université de Toulouse
بلدان المؤلفين المشاركين : فرنسا
المؤلفون المشاركون
- R. Mahamdi
- Salah Abadli
- Hachemi Bouridah
- Lynda Saci
- Ramdane Mahamdi
- N.H. Touidjen
- Bouteina Bendahmane
- Mahmoud Riad Beghoul
- M. Lamri Zeggar
- Riad Remmouche
- Hakim Haoues
- Nadir Attaf
البيانات البيبليوغرافية مصدرها OpenAlex (قاعدة مفتوحة).
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