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Home › Researcher directory › S. Tobbeche

S. Tobbeche

Affiliation : University of Biskra

  • 7Publications (affiliation in Algeria)
  • 15Total publications
  • 175Citations
  • 6h-index

Research profile

S. Tobbeche has 7 indexed publications (2004–2022). Their work appears mainly in “Vacuum”, “Micro and Nanostructures” and “Journal of Computational Electronics”. Their most cited article, “Formation of Ni2Si silicide in Ni/Si bilayers by ion beam mixing” (2004), has been cited 14 times. 3 of these publications date from the last three years of activity. Their work is co-authored with at least 8 researchers.

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Research areas

  • solar cell performance optimization
  • Thin-Film Transistor Technologies
  • Silicon and Solar Cell Technologies
  • Radiation Detection and Scintillator Technologies
  • Nuclear Physics and Applications

Publications (7)

Publication venues

  • Vacuum × 2
  • Micro and Nanostructures × 1
  • Journal of Computational Electronics × 1
  • Optical and Quantum Electronics × 1
  • Materials Science × 1
  • Applied Mechanics and Materials × 1

Publications per year

  • 20221
  • 20212
  • 20151
  • 20121
  • 20061
  • 20041

Collaborations

Partner institutions : Centre de Recherche Nucléaire d’Alger · University Ferhat Abbas of Setif · University Frères Mentouri Constantine 1

Co-authors

Bibliographic data from OpenAlex (open database).

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