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Tomislav Brodar

Affiliation : Université de ain Témouchent

1Publications (affiliation in Algeria)
29Total publications
590Citations
13h-index

Research profile

Tomislav Brodar has 1 indexed publication (2018). Their work appears in “Journal of Applied Physics”. Their most cited article, “Double negatively charged carbon vacancy at the h- and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study” (2018), has been cited 53 times. Their work is co-authored with at least 11 researchers, including institutions in Australia, Japan, Portugal.

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Research areas

Silicon Carbide Semiconductor Technologies
Semiconductor materials and interfaces
Silicon and Solar Cell Technologies
Fusion materials and technologies
Radiation Effects in Electronics

Publications (1)

Double negatively charged carbon vacancy at the h- and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study
2018 · Journal of Applied Physics · cited 53 times

Collaborations

Partner institutions : Australian Nuclear Science and Technology Organisation · National Institutes for Quantum Science and Technology · Ruđer Bošković Institute · Takasaki Advanced Radiation Research Institute · Centre for Accelerator Science

Co-authors’ countries : Australia · Japan · Portugal

Co-authors

Bibliographic data from OpenAlex (open database).