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A. Benfdila
Affiliation : Mouloud Mammeri University of Tizi-Ouzou
- 45Publications (affiliation in Algeria)
- 62Total publications
- 240Citations
- 8h-index
Research profile
A. Benfdila has 45 indexed publications (1999–2025). Their work appears mainly in “HAL”, “IEEE International Conference on Microelectronics (MIEL)” and “Solid-State Electronics”. Their most cited article, “Low frequency noise characterization in n-channel FinFETs” (2011), has been cited 35 times. 5 of these publications date from the last three years of activity. Their work is co-authored with at least 12 researchers, including institutions in France, Austria.
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Create my free profile Add my publicationsResearch areas
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Low-power high-performance VLSI design
- Semiconductor materials and interfaces
- Graphene research and applications
Publications (45)
- Technology Innovations to Counter Threat Vectors
- On 2D MXene Nanosheets FETs (MXFETs) Progress
- Towards Nanosheet Field Effect Transistors
- DFIG Wind Turbine Controlled by Sliding Mode and Fuzzy-Sliding Control Modes
- Modelling and Simulation of PV/WECs Hybrid System Controlled by Fuzzy Logic Control
- Improving High Speed Switching Graphene Transistors Using Bandgap Engineering
- Introduction to the special section on State-of-the-art Micro-Nano devices and systems
- Recursive gain controller for strict feedback systems
- Comparative Study of Individual and Hybrid Renewable Energy Systems (Photovoltaic, Wind Energy and Hybridization). Controlled by Fuzzy Logic Control
- Temperature dependent analytical model for submicron GaAs-MESFET
- Capacitance study of integrated circuits matrix interconnects
- Investigation on EM radiations from interconnects in integrated circuits
- Modeling of Electromagnetic Interference In Graphene Interconnects
- A model for predicting photovoltaic module performances
- Investigation on Body Potential in Cylindrical Gate-All-Around MOSFET
- Investigation on cylindrical gate-all-around (GAA) tunnel FETS scaling
- Capacitance model for MOSFET operated in all regions
- Contribution to the prediction of photovoltaic module performances
- Identification of Si film traps in p-channel SOI FinFETs using low temperature noise spectroscopy
- In depth static and low-frequency noise characterization of n-channel FinFETs on SOI substrates at cryogenic temperature
- Unified current modeling in low‐dimensional MOSFETs
- Performances under saturation operation of p-channel FinFETs on SOI substrates at cryogenic temperature
- Drain current modelling in silicon MOSFETs
- Low temperature noise spectroscopy of p-channel SOI FinFETs
- DC and low frequency noise performances of SOI p-FinFETs at very low temperature
- Detailled characterisation of SOI n-FinFETs at very low temperature
- Resonant Laser‐Induced Formation of Double‐Walled Carbon Nanotubes from Peapods under Ambient Conditions
- DC and noise performances of SOI FinFETs at very low temperature
- Low frequency noise characterization in n-channel FinFETs
- Low frequency noise characterization in n-channel FinFETs
- Assessment of temperature dependence of the low frequency noise in unstrained and strained FinFETs
- Investigation of the laser pumping power impact on the operating regimes of a laser passively Q-switched by a saturated absorber
- Low Frequency Noise Spectroscopy in Advanced nFinFETS
- Assessment of temperature dependence of the low frequency noise in unstrained and strained FinF
- On Silicon Carbide Thermal Oxidation
- ON THE DRAIN CURRENT SATURATION IN CARBON NANOTUBE FIELD EFFECT TRANSISTORS
- On the African Physical Society, AfPS, Launch and the African Physical Review Journal, APR
- Method for extraction of η parameter characterising µ eff against E eff curves in FD-SOI Si MOS devices
- Fast Simulating High Order Models Application to Micro Electro-Mechanical Systems (MEMS)
- Model order reduction of nonlinear systems via the trajectory piecewise linear approach application to transmission lines circuit
- On the drain current saturation in short channel MOSFETs
- On the current saturation in low dimensional MOSFETs
- New technique for measuring the threshold voltage in MOS devices
- Substrate current model in pulsed MOS devices
- An alternative method for measuring flatband voltage in MOS devices
Publication venues
- HAL × 5
- IEEE International Conference on Microelectronics (MIEL) × 4
- Solid-State Electronics × 4
- IEEE International Conference Nanomaterials: Applications & Properties (NAP) × 2
- Microelectronics Journal × 2
- Microelectronic Engineering × 2
Publications per year
- 20252
- 20241
- 20232
- 20222
- 20214
- 20202
- 20192
- 20172
- 20161
- 20151
Collaborations
Partner institutions : GREYC · Université de Caen Normandie · Centre National de la Recherche Scientifique · École Nationale Supérieure d'Ingénieurs de Caen · Centre d’Élaboration de Matériaux et d’Études Structurales
Co-authors’ countries : France · Austria
Co-authors
- Hakim Achour
- Rachida Talmat
- Ahcene Lakhlef
- Mohamed Djouder
- Lounas Belhimer
- Mohamed Kessi
- Zahira Bouguerra
- A. Chikouche
- Zedjiga Yacine
- Saïd Djennoune
- Rabah Mokdad
- Nadia Bouaziz
Bibliographic data from OpenAlex (open database).
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