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Abbès Beloufa
Affiliation : Université Mustapha Stambouli de Mascara
- 12Publications (affiliation in Algeria)
- 19Total publications
- 68Citations
- 5h-index
Research profile
Abbès Beloufa has 12 indexed publications (2016–2025). Their work appears mainly in “Biomedical Materials & Devices”, “International Journal of Nanoelectronics and Materials (IJNeaM)” and “Transactions on Electrical and Electronic Materials”. Their most cited article, “Performance evaluation of electrical properties of GaN MOS-HEMTs based biosensors for rapid detection of viruses” (2022), has been cited 28 times. 3 of these publications date from the last three years of activity. Their work is co-authored with at least 10 researchers.
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Create my free profile Add my publicationsResearch areas
- GaN-based semiconductor devices and materials
- Coding theory and cryptography
- graph theory and CDMA systems
- Semiconductor Quantum Structures and Devices
- Silicon Carbide Semiconductor Technologies
Publications (12)
- Enzyme-Based GaN MODFET Biosensors Structure Design with Excellent Thermal Stability and Mechanical Strength of ZrO2 as Gate Insulator
- Investigation of the Electrical Characteristics of AlGaN/AlN/GaN Heterostructure MOS-HEMTs with TiO2 High-k Gate Insulator
- Performance Analysis of GaN/AlGaN/AlN/GaN MIS-MODFETs with High-κ as Gate Dielectric Insulator Layer
- Performance evaluation of electrical properties of GaN MOS-HEMTs based biosensors for rapid detection of viruses
- Efficiency enhancement of Cd-free buffer layers on CIGS solar cell performance using WxAMPS
- New Zero Cross-Correlation Codes Based on Zech Method’s for OCDMA Systems
- 10.5281/zenodo.6552396
- Jacobi’s Construction Method Codes for Zero Cross-Correlation OCDMA Systems
- A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs
- Computational investigation of CrFeZ [Z = Si, Sn and Ge] half-Heusler compounds ferromagnets
- An Efficient Zero Cross-Correlation Codes for OCDMA Networks
- Numerical analysis of transmission coefficient, LDOS, and DOS in superlattice nanostructures of cubic $$\hbox {Al}_{x}\hbox {Ga}_{1-x}\hbox {N/GaN}$$ Al x Ga 1 - x N/GaN resonant tunneling MODFETs
Publication venues
- Biomedical Materials & Devices × 1
- International Journal of Nanoelectronics and Materials (IJNeaM) × 1
- Transactions on Electrical and Electronic Materials × 1
- Materials Today Communications × 1
- Optik × 1
- GAZI UNIVERSITY JOURNAL OF SCIENCE × 1
Publications per year
- 20251
- 20241
- 20231
- 20223
- 20212
- 20201
- 20192
- 20161
Collaborations
Partner institutions : Université de Saida Dr Moulay Tahar · Université Djilali de Sidi Bel Abbès · Université des Sciences et de la Technologie d'Oran Mohamed Boudiaf · Université Oran 1 Ahmed Ben Bella
Co-authors
- Driss Bouguenna
- Ahmed Garadi
- Zouaoui Bensaad
- Abdellah Bensaad
- Khaled Hebali
- Nawel Kermas
- Faiza Mouffoki
- Abdellah Bouguenna
- Fatima Zohra Dahou
- Benaoumeur Bakhti
Bibliographic data from OpenAlex (open database).
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