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Home › Researcher directory › H. Tranduc

H. Tranduc

Affiliation : Centre National de la Recherche Scientifique · Laboratoire d'Analyse et d'Architecture des Systèmes

  • 3Publications (affiliation in France)
  • 73Total publications
  • 282Citations
  • 9h-index

Research profile

H. Tranduc has 3 indexed publications (1988–2003). Their work appears mainly in “Electrotechnical Conference Integrating Research, Industry and Education in Energy and Communication Engineering”, “The European Physical Journal Applied Physics” and “Le Journal de Physique Colloques”. Their most cited article, “POWER MOS FET MODELS FOR "SWITCHING" CIRCUITS” (1988), has been cited 5 times. Their work is co-authored with at least 8 researchers.

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Research areas

  • Silicon Carbide Semiconductor Technologies
  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor materials and interfaces
  • Advanced Power Amplifier Design

Publications (3)

Publication venues

  • Electrotechnical Conference Integrating Research, Industry and Education in Energy and Communication Engineering × 1
  • The European Physical Journal Applied Physics × 1
  • Le Journal de Physique Colloques × 1

Publications per year

  • 20031
  • 19991
  • 19881

Collaborations

Partner institutions : Motorola (France)

Co-authors

Bibliographic data from OpenAlex (open database).

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