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Home › Researcher directory › I. Ben Miled

I. Ben Miled

Affiliation : Research and Technology Center of Energy

  • 4Publications (affiliation in Tunisia)
  • 4Total publications
  • 60Citations
  • 4h-index

Research profile

I. Ben Miled has 4 indexed publications (2017–2025). Their work appears mainly in “Silicon”, “Surfaces and Interfaces” and “Journal of Materials Science Materials in Electronics”. Their most cited article, “Influence of In-doping on microstructure, optical and electrical properties of sol–gel derived CdO thin films” (2018), has been cited 20 times. Their work is co-authored with at least 7 researchers, including institutions in Greece.

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Research areas

  • ZnO doping and properties
  • Chalcogenide Semiconductor Thin Films
  • Thin-Film Transistor Technologies
  • Silicon and Solar Cell Technologies
  • Semiconductor materials and interfaces

Publications (4)

Publication venues

  • Silicon × 1
  • Surfaces and Interfaces × 1
  • Journal of Materials Science Materials in Electronics × 1
  • Journal of Sol-Gel Science and Technology × 1

Publications per year

  • 20251
  • 20191
  • 20181
  • 20171

Collaborations

Partner institutions : Manouba University · University of Carthage · University of Sfax · National School of Electronics and Telecommunications of Sfax, Tunisia · National Hellenic Research Foundation

Co-authors’ countries : Greece

Co-authors

Bibliographic data from OpenAlex (open database).

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