Accueil › Annuaire des chercheurs › Saïd Ridene
Saïd Ridene
Affiliation : Tunis El Manar University
- 42Publications (affiliation tunisienne)
- 55Publications au total
- 585Citations
- 14Indice h
Profil de recherche
Saïd Ridene compte 42 publications référencées (2001–2026). Ses travaux paraissent principalement dans « Optik », « Journal of Applied Physics » et « Superlattices and Microstructures ». Son article le plus cité, « Infrared absorption in Si/Si1−xGex/Si quantum wells » (2001), a été cité 71 fois. 9 de ces publications datent des trois dernières années d’activité. Ses travaux sont cosignés avec au moins 12 chercheurs.
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- Semiconductor Quantum Structures and Devices
- Semiconductor Lasers and Optical Devices
- 2D Materials and Applications
- Photonic and Optical Devices
- solar cell performance optimization
Publications (42)
- Covalent functionalization of MoSe 2 nanosheets with hydrogen bond-donating functionalities for the sensing of nitroaromatics
- Electroluminescence decay from exciton dissociation in MEH-PPV-CdSe layers
- Optical Transmission Enhancement of MoS2 Nanosheets Doped with Magnetic Materials Ni, Mn, and Cr
- Study of the structural and electronic properties of Zn1−x−yMgxTiyO structures
- Many-body effects in type II nanostructures MoS2/WSe2
- Surface Tailoring of MoS2 Nanosheets with Substituted Aromatic Diazonium Salts for Gas Sensing: A DFT Study
- Linear and nonlinear exciton polariton dispersion in MoS2 nanosheets and its nickel doping dependence
- Investigation of α-Sn Dependence of Band Structure and Optical Emission in Si/SiyGe1-x-ySnx/Si Quantum Well Laser
- Mid-Infrared Emission in Ge/Ge1-xSnx/Ge Quantum Well Modeled Within 14-Band k.p Model
- Effect of Ni-concentration on the linear and nonlinear optical properties of MoS2 nanostructures
- Linear and nonlinear electric and magneto-optical absorption coefficients and relative refractive index changes in WxMo1−xS2 monolayer: Role of tungsten contents
- Effect of defects and doping on the transmission spectrum enhancement of photonic crystal based on 2D-MoS2
- Tailoring the optical band gap of In–Sn–Zn–O (ITZO) nanostructures with co-doping process on ZnO crystal system: an experimental and theoretical validation
- Calculation of ground state and Hartree energies of MoS2/WSe2 assembled type II quantum well
- Investigation of orientation dependence of piezoelectric effects in strained GaAs/InGaAs quantum well laser
- Temperature effect on structural, morphological and optical properties of 2D-MoS2 layers: An experimental and theoretical study
- Design considerations of AlGaInAs quaternary nanowires for mid-infrared applications
- Mid-infrared emission in InxGa1−xAs/GaAs T-shaped quantum wire lasers and its indium composition dependence
- Large optical gain from the 2D-transition metal dichalcogenides of MoS2/WSe2 quantum wells
- GaSbBi/GaSb quantum-well and wire laser diodes
- Novel T-shaped GaSb/InAsN quantum wire for mid-infrared laser applications
- Self-consistent optimization of [111]-AlGaInAs/InP MQWs structures lasing at 1.55 μm by a genetic algorithm
- Proposal of InP/AlInGaAs single delta quantum well for fiber-optic communications
- Optical Gain in Type-II InAsN/GaSb Strained Quantum Wells Laser Diodes and Its Pressure Dependence
- High-efficiency of AlInGaN/Al(In)GaN-delta AlGaN quantum wells for deep-ultraviolet emission
- Oscillator strengths for the intersubband transitions in GaAs/InGa1–As quantum wells and its strain dependence
- Hole intersubband transitions in wurtzite and zinc-blende strained AlGaN/GaN quantum wells and its interband interaction dependence
- Theoretical investigations of the performance of the active laser region by the calculation of the optical gain
- Band Structure, Optical Transition, and Optical Gain of Type-II InAs(N)/GaSb Quantum Wells Laser Diodes Modeled Within 16-Band and 14-Band $kp$ Model
- Effect of hydrostatic pressure on the hole effective mass in a strained InGaAs/GaAs quantum well
- [h h l]Orientation dependence of optoelectronic properties in InAsN/GaSb quantum well laser diodes with W and M design
- Dependence of hole effective mass on nitrogen concentration in W-type strained InAs(N)/GaSb/InAs(N) quantum well lasers
- A theoretical study of laser structures based on dilute-nitride InAsN for mid-infrared operation
- THEORETICAL COMPARISON OF DILUTE-NITRIDE "W" AND "M" InAsN / GaSb MID-INFRARED LASER DIODES
- Energy-band structure and optical gain in strained InAs(N)/GaSb/InAs(N) quantum well lasers.
- InAsN/GaSb/InAsN ‘W’ quantum well laser for mid-infrared emission: from electronic structure to threshold current density calculations
- Band structures of GaAs, InAs, and Ge: A 24-k.p model
- Symmetrized Hamiltonian versus ‘Foreman’ Hamiltonian for semiconductor valence band: an insight
- Band structures of Ge and InAs: A 20 k.p model
- Theoretical investigation of intersubband hole transitions in Si/SiGe/Si quantum wells
- Infrared absorption in Si/Si1−xGex/Si quantum wells
- Luttinger-like parameter calculations
Revues de publication
- Optik × 4
- Journal of Applied Physics × 4
- Superlattices and Microstructures × 3
- International Journal of Modern Physics B × 2
- Journal of Nonlinear Optical Physics & Materials × 2
- Chemical Physics Letters × 2
Publications par année
- 20262
- 20253
- 20244
- 20233
- 20222
- 20211
- 20201
- 20191
- 20183
- 20174
Collaborations
Établissements partenaires : Tunis University · University of Monastir · University of Carthage · University of Jendouba
Co-auteurs
- Habib Bouchriha
- Hosni Saidi
- Nouha Mastour
- Kaïs Boujdaria
- Mourad Debbichi
- Moncef Said
- Noureddine Raouafi
- Amira Ben Ahmed
- Sabrine Baachaoui
- Omar Zitouni
- Sondes Kaddour
- S. Ben Radhia
Données bibliographiques issues d’OpenAlex (base ouverte).
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