الرئيسية › دليل الباحثين › Saϊda Latreche
Saϊda Latreche
الانتماء : University Frères Mentouri Constantine 1
- 58منشورات (انتماء جزائري)
- 88مجموع المنشورات
- 206الاستشهادات
- 7مؤشر h
الملف البحثي
لدى Saϊda Latreche 58 منشور(ات) مفهرسة (2003–2025). تُنشر أعماله أساسًا في «Journal of Nano- and Electronic Physics»، «Russian Microelectronics» و«International Journal of Circuits Systems and Signal Processing». أكثر مقالاته استشهادًا هو «Compact drain-current model for undoped cylindrical surrounding-gate metal-oxide-semiconductor field effect transistors including short chan» (2013)، وقد استُشهد به 22 مرة. 5 من هذه المنشورات تعود إلى آخر ثلاث سنوات من النشاط. شارك في تأليف أعماله 12 باحثًا على الأقل، منهم باحثون من مؤسسات في إيطاليا، فرنسا، الولايات المتحدة، البرتغال.
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إنشاء ملفي المجاني إضافة منشوراتيمجالات البحث
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Radio Frequency Integrated Circuit Design
- Particle Detector Development and Performance
- Advanced Semiconductor Detectors and Materials
المنشورات (58)
- Impact of Self-Heating in Si/SiGe HBTs with Multi-Finger Emitters
- Optimization of Si/SiGe HBT Architecture Integrated in 28-nm FD-SOI BiCMOS Technology
- Impact of High Temperature and Germanium Rate on the Electrical Performance of the SiGe Heterojunction Bipolar Transistor with DPSA-SEG Architecture
- NOISE THEORITICAL INVESTIGATIONS FOR TRI-DIMMENSIONAL NMR CIRCUIT: TOWARDS THE NANOSCALE
- Optimisation of extrinsic base doping of a SiGe heterojunction bipolar transistor integrated in a BiCMOS 55 nm technology for high frequency performances
- Mixed-Mode Optical/Electric Simulation of Silicon Lateral PIN Photodiode Using FDTD Method
- The Analysis of the Polysilicon base Position of the Thermal Resistance and the Self Heating Effects of 0.13 µm SiGe Heterojunction Bipolar Transistors
- A Modified 3D-Trench Pixel Detector: Proof of Concept by TCAD Simulations
- Numerical modeling of electrical/optical combination for the simulation of PIN photodiode
- Improvement of the Self-Heating Performance of an Advanced SiGe HBT Transistor Through the Peltier Effect
- Comparing different bulk radiation damage models in TCAD simulations of small-pitch 3D Si sensors
- Double-gate MOSFET Model Implemented in Verilog-AMS Language for the Transient Simulation and the Configuration of Ultra Low-power Analog Circuits
- Analytical Drain-Current Model and Surface-Potential Calculation for Junctionless Cylindrical Surrounding-Gate MOSFETs
- COMSOL simulation of a new generation of SiGe heterojunction bipolar transistor (HBT) integrated in a BiCMOS 55nm technology
- TCAD simulation of small-pitch 3D sensors for pixel detector upgrades at High Luminosity LHC
- Simulation and test results of a slim edge planar p-on-n sensor for FEL applications
- Effect of Trench Isolation on the Self-heating Phenomenon in Advanced Radio Frequency SiGe Heterojunction Bipolar Transistor
- Analysis of Through Silicon Vias and substrate coupling in 3D CMOS circuits by Spice simulations
- Analytical Drain-Current Model and Surface-Potential Calculation for Junctionless Cylindrical Surrounding-Gate MOSFETs
- Analysis of Self-heating of a SiGe HBT Designed for RF Applications According to the Percentage of Germanium
- Compact border termination for active‐edge planar radiation detectors with enhanced breakdown voltage
- Two-dimensional numerical modeling of sub micrometer SiGe HBT transistors
- Design and First Characterization of Active and Slim-Edge Planar Detectors for FEL Applications
- Electrical modelling of Through Silicon Vias (TSVs) and their impact on a CMOS circuit: Ring oscillator
- An accurate numerical time domain model for nanometric Silicon PIN
- Numerical method for a 2D drift diffusion model arising in strained n-type MOSFET device
- Effect of High-k Oxide on Double Gate Transistor Embedded in RF Colpitts Oscillator
- Design and TCAD simulation of planar p-on-n active-edge pixel sensors for the next generation of FELs
- In-pixel conversion with a 10 bit SAR ADC for next generation X-ray FELs
- Experimentally verified drain‐current model for variable barrier transistor
- Towards 3D Integration of Monolithic X or Γ Ray Detectors Under Possible Electromagnetic Perturbations or Malfunctions
- UC1 Oscillator Remote Lab for Distant Electronics Education
- Reflectometry Characterization of an installed optical fiber in Algeria
- Design and TCAD simulations of planar active-edge pixel sensors for future XFEL applications
- Mixed-Mode Device Modeling of DGMOS RF Oscillators
- Analytical approach of the impact of through silicon via on the performance of MOS devices
- Compact Modeling of Lightly Doped Nanoscale DG MOSFET Transistor
- UC1 Oscillator remotelab for distant electronics education
- Compact drain-current model for undoped cylindrical surrounding-gate metal-oxide-semiconductor field effect transistors including short channel effects
- Mathematical approach and optimisation of nanometric base thickness for a SiGeC HBT dedicated to radiofrequency applications
- Phase noise modeling in LC oscillators implemented in SiGe technology
- Numerical modeling of MOS transistor with interconnections using lumped element-FDTD method
- Numerical modeling of MOS transistor using implicit finite different-time domain method
- A new approach of power electronic design using a nonlinear average model
- Compact modeling of long channel Double Gate MOSFET transistor
- Combined Electromagnetic and Drift Diffusion Models for Microwave Semiconductor Device
- Insights into Three-Dimensional Radiofrequency Circuits Connections
- Markov Chain Approach of Digital Flow Disturbances on Supplies Via Heterogeneous Integrated Circuit Substrate
- Channel length scaling and the impact of metal gate work function on the performance of double gate-metal oxide semiconductor field-effect transistors
- First- and second-order electrical modelling and experiment on very high speed SiGeC heterojunction bipolar transistors
- Effect of Implantation Defects and Carbon Incorporation on Si/SiGe Bipolar Characteristics
- Modelling of parasitic effects induced by electrically active defects in a SiGe HBT
- Mixed‐mode analysis of the sensitivity of a radiofrequency oscillator disturbed by parasitic signals
- Photonic band gap grating in He+-implanted lithium niobate waveguides
- Tunnelling current through ultra thin Silicon Dioxide in Submicronic MOS
- Influence of the position of electrically active defects on the characteristics of an SiGe HBT
- An average model for power integration design
- STUDY OF A SILICON POWER DIODE USING A TIME DEPENDENT HYDRODYNAMIC MODEL
مجلات النشر
- Journal of Nano- and Electronic Physics × 3
- Russian Microelectronics × 2
- International Journal of Circuits Systems and Signal Processing × 2
- International Conference on Engineering and Emerging Technologies (ICEET) × 2
- International Conference on Electrical and Information Technologies × 2
- Pramana × 2
المنشورات حسب السنة
- 20252
- 20241
- 20232
- 20224
- 202110
- 20202
- 20181
- 20173
- 20162
- 20156
التعاون العلمي
المؤسسات الشريكة : University of Boumerdes · University of Skikda · Centre Universitaire de Mila · University of Trento · Istituto Nazionale di Fisica Nucleare, Trento Institute for Fundamental Physics And Applications
بلدان المؤلفين المشاركين : إيطاليا · فرنسا · الولايات المتحدة · البرتغال
المؤلفون المشاركون
- Maya Lakhdara
- Samir Labiod
- Billel Smaani
- Abdelaaziz Boulgheb
- M.A. Benkechkache
- Mourad Bella
- Abderrezak Boughedda
- Chems El Ghizlane Lachkhab
- Mohamed Salah Benlatreche
- N. Kherief
- Fares Nafa
- Zehira Ziari
البيانات البيبليوغرافية مصدرها OpenAlex (قاعدة مفتوحة).
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