الرئيسية › دليل الباحثين › Khalid Rais
Khalid Rais
الانتماء : Chouaib Doukkali University
- 35منشورات (انتماء مغربي)
- 52مجموع المنشورات
- 238الاستشهادات
- 8مؤشر h
الملف البحثي
لدى Khalid Rais 35 منشور(ات) مفهرسة (1997–2020). تُنشر أعماله أساسًا في «Active and Passive Electronic Components»، «International Conference on Microelectronics (ICM)» و«Computer Science and Information Technologies». أكثر مقالاته استشهادًا هو «Design and implementation of a photovoltaic I-V curve tracer: Solar modules characterization under real operating conditions» (2018)، وقد استُشهد به 72 مرة. 11 من هذه المنشورات تعود إلى آخر ثلاث سنوات من النشاط. شارك في تأليف أعماله 12 باحثًا على الأقل.
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إنشاء ملفي المجاني إضافة منشوراتيمجالات البحث
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Silicon Carbide Semiconductor Technologies
- Low-power high-performance VLSI design
- Semiconductor materials and interfaces
المنشورات (35)
- Extraction of series resistance and mobility degradation parameter in MOSFETs using iterative method
- Extraction of series resistance and mobility degradation parameter in short channel MOSFET Transistor using iterative method
- Extraction of series resistance and mobility degradation parameter in MOSFETs using iterative method
- Parameter Identification of Photovoltaic Generators Using an Analytical Approach and Iterative Method
- Design and implementation of a photovoltaic I-V curve tracer: Solar modules characterization under real operating conditions
- Estimation of five parameters of photovoltaic modules using a synergetic control theory approach
- Parameters Extraction of Photovoltaic Cell Based on Experimental Current-Voltage Characteristic
- Efficient Stacked Cylindrical Dielectric Resonator Antenna for Anticollision Short Range Radar at 79GHz
- New Use of the Photovoltaic Cells and Modules Current-Voltage Characteristic to Extract the Simple Diode Model Parameters
- Design of High Gain Novel Dielectric Resonator Antenna Array for 24 GHz Short Range Radar Systems
- High Physical Parameters Adjustment of the npp+ Solar Cell Structure using PC1D
- Temperature influence on performance of a solar cell receiving direct sunlight and a halogen lamp irradiation
- Rectangular Dielectric Resonator Antenna (RDRA) for anti-collision short range radar (SRR) application
- A high gain Novel Dielectric Resonator Antenna (NDRA) for anti-collision short range radar (SRR) application
- Characterization of Series Resistance and Mobility Degradation Parameter and Optimizing Choice of Oxide Thickness in Thin OxideN-Channel MOSFET
- Characterization of defect density created by stress in the gate to drain overlap region using GIDL current model in n-channel MOSFET
- Illuminated solar cell physical parameters extraction using mathematica
- Annealing of Irradiated-Induced defects in power MOSFETs
- Use of the Nitride to Reduce High-K Secondary Effects in Submicron MOSFETs
- A new generalized model of the effective mobility in MOS transistors operated from helium to room temperature
- Characterization of Series Resistances and Mobility Attenuation Phenomena in Short Channel MOS Transistors
- An Accurate Method for Extracting the Critical Field in Short Channel NMOS Devices
- An accurate method for extracting the critical field in short channel NMOS devices
- New method for determination of drain saturation voltage in submicrometer MOSFETs between liquid helium to room temperature
- Analysis of Temperature and Drain Voltage Dependence of Substrate Current in Deep SubmicrometerMOSFET′S
- A Physical Model for MOSFET Drain Current in Non‐ohmic Regime Using Ohmic Regime Operation
- New Method for Determination of Drain Saturation Voltage in Short Channel MOS DevicesBetween Liquid Helium to Room Temperature
- Annealing of radiation damage in MOS devices: Study by diode parameter determination
- Relaxable Damage in Hot‐Carrier Stressing of n‐MOS Transistors
- Characterization of annealing of Co-60 gamma-ray damage inN-channel power MOSFETs
- Hot carrier stressing damage in N-channel HEXFETs
- Analysis of Hot‐Carrier Degradation in Small and Large W/L n‐Channel Transistors
- Diode Physical Parameters for HEXFETs Characterization of Dose Effect
- Caractérisation des dégradations de transistors MOS de puissance sous irradiations
- Surface Recombination ViaInterface Defects in Field Effect Transistors
مجلات النشر
- Active and Passive Electronic Components × 10
- International Conference on Microelectronics (ICM) × 3
- Computer Science and Information Technologies × 2
- Journal of Computational Electronics × 2
- International Renewable and Sustainable Energy Conference (IRSEC) × 2
- Radiation effects and defects in solids × 2
المنشورات حسب السنة
- 20203
- 20191
- 20187
- 20163
- 20111
- 20101
- 20092
- 20051
- 20041
- 20017
التعاون العلمي
المؤسسات الشريكة : Université Ibn Zohr · Université Sultan Moulay Slimane · International University of Rabat · Mohammed V University · Cadi Ayyad University
المؤلفون المشاركون
- Redouane Rmaily
- Y. Amhouche
- Noureddine Maouhoub
- Hamza Mokhliss
- Mohssin Aoutoul
- Abderrahim Haddad
- Mohammadi Benhmida
- Said Yadir
- Said Bounouar
- Mohamed Essaaidi
- Houssam Amiry
- Charaf Hajjaj
البيانات البيبليوغرافية مصدرها OpenAlex (قاعدة مفتوحة).
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