الرئيسية › دليل الباحثين › Y. Amhouche

Y. Amhouche

الانتماء : Chouaib Doukkali University

• 8منشورات (انتماء مغربي)
• 10مجموع المنشورات
• 11الاستشهادات
• 2مؤشر h

OpenAlex

مجالات البحث

• Semiconductor materials and devices
• Advancements in Semiconductor Devices and Circuit Design
• Low-power high-performance VLSI design
• Integrated Circuits and Semiconductor Failure Analysis
• Silicon Carbide Semiconductor Technologies

المنشورات (8)

• Use of the Nitride to Reduce High-K Secondary Effects in Submicron MOSFETs
  2005 · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
• Characterization of Series Resistances and Mobility Attenuation Phenomena in Short Channel MOS Transistors
  2001 · Active and Passive Electronic Components · استُشهد به 7 مرة
• An Accurate Method for Extracting the Critical Field in Short Channel NMOS Devices
  2001 · Active and Passive Electronic Components · استُشهد به 2 مرة
• An accurate method for extracting the critical field in short channel NMOS devices
  2001 · International Conference on Microelectronics (ICM) · استُشهد به 1 مرة
• New method for determination of drain saturation voltage in submicrometer MOSFETs between liquid helium to room temperature
  2001 · International Conference on Microelectronics (ICM) · استُشهد به 1 مرة
• Analysis of Temperature and Drain Voltage Dependence of Substrate Current in Deep SubmicrometerMOSFET′S
  2001 · Active and Passive Electronic Components
• A Physical Model for MOSFET Drain Current in Non‐ohmic Regime Using Ohmic Regime Operation
  2001 · Active and Passive Electronic Components
• New Method for Determination of Drain Saturation Voltage in Short Channel MOS DevicesBetween Liquid Helium to Room Temperature
  2001 · Active and Passive Electronic Components

المؤلفون المشاركون

• Khalid Rais
• Redouane Rmaily

البيانات البيبليوغرافية مصدرها OpenAlex (قاعدة مفتوحة).