Accueil › Annuaire des chercheurs › Khalid Rais
Khalid Rais
Affiliation : Chouaib Doukkali University
- 35Publications (affiliation marocaine)
- 52Publications au total
- 238Citations
- 8Indice h
Profil de recherche
Khalid Rais compte 35 publications référencées (1997–2020). Ses travaux paraissent principalement dans « Active and Passive Electronic Components », « International Conference on Microelectronics (ICM) » et « Computer Science and Information Technologies ». Son article le plus cité, « Design and implementation of a photovoltaic I-V curve tracer: Solar modules characterization under real operating conditions » (2018), a été cité 72 fois. 11 de ces publications datent des trois dernières années d’activité. Ses travaux sont cosignés avec au moins 12 chercheurs.
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Créer mon profil gratuit Ajouter mes publicationsDomaines de recherche
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Silicon Carbide Semiconductor Technologies
- Low-power high-performance VLSI design
- Semiconductor materials and interfaces
Publications (35)
- Extraction of series resistance and mobility degradation parameter in MOSFETs using iterative method
- Extraction of series resistance and mobility degradation parameter in short channel MOSFET Transistor using iterative method
- Extraction of series resistance and mobility degradation parameter in MOSFETs using iterative method
- Parameter Identification of Photovoltaic Generators Using an Analytical Approach and Iterative Method
- Design and implementation of a photovoltaic I-V curve tracer: Solar modules characterization under real operating conditions
- Estimation of five parameters of photovoltaic modules using a synergetic control theory approach
- Parameters Extraction of Photovoltaic Cell Based on Experimental Current-Voltage Characteristic
- Efficient Stacked Cylindrical Dielectric Resonator Antenna for Anticollision Short Range Radar at 79GHz
- New Use of the Photovoltaic Cells and Modules Current-Voltage Characteristic to Extract the Simple Diode Model Parameters
- Design of High Gain Novel Dielectric Resonator Antenna Array for 24 GHz Short Range Radar Systems
- High Physical Parameters Adjustment of the npp+ Solar Cell Structure using PC1D
- Temperature influence on performance of a solar cell receiving direct sunlight and a halogen lamp irradiation
- Rectangular Dielectric Resonator Antenna (RDRA) for anti-collision short range radar (SRR) application
- A high gain Novel Dielectric Resonator Antenna (NDRA) for anti-collision short range radar (SRR) application
- Characterization of Series Resistance and Mobility Degradation Parameter and Optimizing Choice of Oxide Thickness in Thin OxideN-Channel MOSFET
- Characterization of defect density created by stress in the gate to drain overlap region using GIDL current model in n-channel MOSFET
- Illuminated solar cell physical parameters extraction using mathematica
- Annealing of Irradiated-Induced defects in power MOSFETs
- Use of the Nitride to Reduce High-K Secondary Effects in Submicron MOSFETs
- A new generalized model of the effective mobility in MOS transistors operated from helium to room temperature
- Characterization of Series Resistances and Mobility Attenuation Phenomena in Short Channel MOS Transistors
- An Accurate Method for Extracting the Critical Field in Short Channel NMOS Devices
- An accurate method for extracting the critical field in short channel NMOS devices
- New method for determination of drain saturation voltage in submicrometer MOSFETs between liquid helium to room temperature
- Analysis of Temperature and Drain Voltage Dependence of Substrate Current in Deep SubmicrometerMOSFET′S
- A Physical Model for MOSFET Drain Current in Non‐ohmic Regime Using Ohmic Regime Operation
- New Method for Determination of Drain Saturation Voltage in Short Channel MOS DevicesBetween Liquid Helium to Room Temperature
- Annealing of radiation damage in MOS devices: Study by diode parameter determination
- Relaxable Damage in Hot‐Carrier Stressing of n‐MOS Transistors
- Characterization of annealing of Co-60 gamma-ray damage inN-channel power MOSFETs
- Hot carrier stressing damage in N-channel HEXFETs
- Analysis of Hot‐Carrier Degradation in Small and Large W/L n‐Channel Transistors
- Diode Physical Parameters for HEXFETs Characterization of Dose Effect
- Caractérisation des dégradations de transistors MOS de puissance sous irradiations
- Surface Recombination ViaInterface Defects in Field Effect Transistors
Revues de publication
- Active and Passive Electronic Components × 10
- International Conference on Microelectronics (ICM) × 3
- Computer Science and Information Technologies × 2
- Journal of Computational Electronics × 2
- International Renewable and Sustainable Energy Conference (IRSEC) × 2
- Radiation effects and defects in solids × 2
Publications par année
- 20203
- 20191
- 20187
- 20163
- 20111
- 20101
- 20092
- 20051
- 20041
- 20017
Collaborations
Établissements partenaires : Université Ibn Zohr · Université Sultan Moulay Slimane · International University of Rabat · Mohammed V University · Cadi Ayyad University
Co-auteurs
- Redouane Rmaily
- Y. Amhouche
- Noureddine Maouhoub
- Hamza Mokhliss
- Mohssin Aoutoul
- Abderrahim Haddad
- Mohammadi Benhmida
- Said Yadir
- Said Bounouar
- Mohamed Essaaidi
- Houssam Amiry
- Charaf Hajjaj
Données bibliographiques issues d’OpenAlex (base ouverte).
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