الرئيسية › دليل الباحثين › Adel Matoussi
Adel Matoussi
الانتماء : University of Sfax
- 42منشورات (انتماء تونسي)
- 46مجموع المنشورات
- 782الاستشهادات
- 18مؤشر h
الملف البحثي
لدى Adel Matoussi 42 منشور(ات) مفهرسة (2001–2026). تُنشر أعماله أساسًا في «Journal of Alloys and Compounds»، «Applied Physics A» و«The European Physical Journal Plus». أكثر مقالاته استشهادًا هو «Electrical conduction and dielectric studies of ZnO pellets» (2012)، وقد استُشهد به 112 مرة. 2 من هذه المنشورات تعود إلى آخر ثلاث سنوات من النشاط. شارك في تأليف أعماله 12 باحثًا على الأقل، منهم باحثون من مؤسسات في السعودية.
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إنشاء ملفي المجاني إضافة منشوراتيمجالات البحث
- ZnO doping and properties
- Dielectric properties of ceramics
- GaN-based semiconductor devices and materials
- Semiconductor materials and interfaces
- Semiconductor materials and devices
المنشورات (42)
- Impact of interface states and series resistance on the electrical and dielectric response of ECR-PECVD SiO₂/p-Si MOS structures
- Interface states and series-resistance-controlled electrical behavior quality of ECR-PECVD SiO2/p–Si MOS structure
- A comprehensive study on the interface states in the ECR-PECVD SiO2/p-Si MOS structures analyzed by different method
- AC electrical conduction mechanisms and dielectrical studies of DD3 kaolin sintered at high temperature
- Structural, electric modulus and complex impedance analysis of ZnO/TiO 2 composite ceramics
- Impedance analysis, dielectric relaxation and modulus behaviour of ZnO-Sn2O3 ceramics
- Erratum to: Series and parallel resistance effects on the C–V and G–V characteristics of Al/SiO $$_2$$ 2 /Si structure
- Erratum to: Study of various technological parameters on the C-Vg and the G-Vg characteristics of MOS structures
- Solid state synthesis and structural characterization of zinc titanates
- Structural and optical properties of ZnO/TiO2 composites
- Morphological and optical studies of zinc oxide doped MgO
- Structural and optical properties of zinc oxide doped by V2O5 synthesized by solid-state reaction
- Electrical and dielectric properties of In2S3 synthesized by solid state reaction
- Conduction mechanism and dielectric properties of ZnO/MgO solid composites
- Optical and Raman studies of Zn 1-x Mg x O ceramic pellets
- Synthesis and enhanced effect of vanadium on structural and optical properties of zinc oxide
- Series and parallel resistance effects on the C–V and G–V characteristics of $$\mathrm{Al}/\mathrm{SiO}_{2}$$ Al / SiO 2 /Si structure
- Study of various technological parameters on the C-Vg and the G-Vg characteristics of MOS structures
- Studies on structural and electrical properties of ZnO/TiO 2 composite materials
- Synthesis and structural properties of vanadium doped zinc oxide
- AC conductivity and structural properties of Mg-doped ZnO ceramic
- Effects of series and parallel resistances on the C-V characteristics of silicon-based metal oxide semiconductor (MOS) devices
- Optical and structural properties of Zn1−x Mg x O ceramic materials
- Dielectric study on Zn1−x Mg x O ceramic materials prepared by the solid-state route
- Effect of Sn2O3 doping on structural, optical and dielectric properties of ZnO ceramics
- Structural and dielectric properties of undoped ZnO pellets prepared by solid state route
- Electrical conduction and dielectric studies of ZnO pellets
- Dielectric and conductivity investigations of rutile titanium dioxide single crystals
- Structural and Optical Properties of Znx-1MgxO Ceramic Composites
- Structural and Dielectric Properties of Sintering Zinc Oxide Bulk Ceramic
- Luminescent properties of GaN films grown on porous silicon substrate
- Cathodoluminescence investigations of GaAs thin layers
- Cathodoluminescence study of undoped GaN films: Experiment and calculation
- Measurements and modelling of thermal step current in GaN/SiO2/Si structure
- Morphological, structural and optical properties of GaN grown on porous silicon/Si(100) substrate
- Cathodoluminescence study in AlxGa1−xN structures
- On the use of the thermal step method as a tool for study of space charge in semiconductor gallium nitride: GaN
- Electron beam-induced current investigation of GaN Schottky diode
- Optical properties of GaN grown on porous silicon substrate
- Minority carrier diffusion lengths and optical self‐absorption coefficient in undoped GaN
- Morphological study of GaN layers grown on porous silicon
- Porous silicon as an intermediate buffer layer for GaN growth on (100) Si
مجلات النشر
- Journal of Alloys and Compounds × 5
- Applied Physics A × 5
- The European Physical Journal Plus × 3
- Superlattices and Microstructures × 3
- Physica E Low-dimensional Systems and Nanostructures × 2
- Journal of Computational Electronics × 2
المنشورات حسب السنة
- 20262
- 20191
- 20181
- 20174
- 201610
- 20154
- 20142
- 20132
- 20123
- 20111
التعاون العلمي
المؤسسات الشريكة : Faculty of Sciences of Sfax · Institut préparatoire aux études d'ingénieurs de Sfax · University of Monastir · University of Gabès · National Engineering School of Tunis
بلدان المؤلفين المشاركين : السعودية
المؤلفون المشاركون
- Samir GUERMAZI
- Belgacem El Jani
- Zayani Jaafar Othman
- Omar Rejaiba
- T. Boufaden
- Mariem Chaari
- Z. Fakhfakh
- Férid Ben Nasr
- Raoudha Ben Belgacem
- Youssef Mlik
- R. Abaira
- Sarra Ayed
البيانات البيبليوغرافية مصدرها OpenAlex (قاعدة مفتوحة).
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