Accueil › Annuaire des chercheurs › Adel Matoussi
Adel Matoussi
Affiliation : University of Sfax
- 42Publications (affiliation tunisienne)
- 46Publications au total
- 782Citations
- 18Indice h
Profil de recherche
Adel Matoussi compte 42 publications référencées (2001–2026). Ses travaux paraissent principalement dans « Journal of Alloys and Compounds », « Applied Physics A » et « The European Physical Journal Plus ». Son article le plus cité, « Electrical conduction and dielectric studies of ZnO pellets » (2012), a été cité 112 fois. 2 de ces publications datent des trois dernières années d’activité. Ses travaux sont cosignés avec au moins 12 chercheurs, notamment dans des établissements de Arabie saoudite.
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- ZnO doping and properties
- Dielectric properties of ceramics
- GaN-based semiconductor devices and materials
- Semiconductor materials and interfaces
- Semiconductor materials and devices
Publications (42)
- Impact of interface states and series resistance on the electrical and dielectric response of ECR-PECVD SiO₂/p-Si MOS structures
- Interface states and series-resistance-controlled electrical behavior quality of ECR-PECVD SiO2/p–Si MOS structure
- A comprehensive study on the interface states in the ECR-PECVD SiO2/p-Si MOS structures analyzed by different method
- AC electrical conduction mechanisms and dielectrical studies of DD3 kaolin sintered at high temperature
- Structural, electric modulus and complex impedance analysis of ZnO/TiO 2 composite ceramics
- Impedance analysis, dielectric relaxation and modulus behaviour of ZnO-Sn2O3 ceramics
- Erratum to: Series and parallel resistance effects on the C–V and G–V characteristics of Al/SiO $$_2$$ 2 /Si structure
- Erratum to: Study of various technological parameters on the C-Vg and the G-Vg characteristics of MOS structures
- Solid state synthesis and structural characterization of zinc titanates
- Structural and optical properties of ZnO/TiO2 composites
- Morphological and optical studies of zinc oxide doped MgO
- Structural and optical properties of zinc oxide doped by V2O5 synthesized by solid-state reaction
- Electrical and dielectric properties of In2S3 synthesized by solid state reaction
- Conduction mechanism and dielectric properties of ZnO/MgO solid composites
- Optical and Raman studies of Zn 1-x Mg x O ceramic pellets
- Synthesis and enhanced effect of vanadium on structural and optical properties of zinc oxide
- Series and parallel resistance effects on the C–V and G–V characteristics of $$\mathrm{Al}/\mathrm{SiO}_{2}$$ Al / SiO 2 /Si structure
- Study of various technological parameters on the C-Vg and the G-Vg characteristics of MOS structures
- Studies on structural and electrical properties of ZnO/TiO 2 composite materials
- Synthesis and structural properties of vanadium doped zinc oxide
- AC conductivity and structural properties of Mg-doped ZnO ceramic
- Effects of series and parallel resistances on the C-V characteristics of silicon-based metal oxide semiconductor (MOS) devices
- Optical and structural properties of Zn1−x Mg x O ceramic materials
- Dielectric study on Zn1−x Mg x O ceramic materials prepared by the solid-state route
- Effect of Sn2O3 doping on structural, optical and dielectric properties of ZnO ceramics
- Structural and dielectric properties of undoped ZnO pellets prepared by solid state route
- Electrical conduction and dielectric studies of ZnO pellets
- Dielectric and conductivity investigations of rutile titanium dioxide single crystals
- Structural and Optical Properties of Znx-1MgxO Ceramic Composites
- Structural and Dielectric Properties of Sintering Zinc Oxide Bulk Ceramic
- Luminescent properties of GaN films grown on porous silicon substrate
- Cathodoluminescence investigations of GaAs thin layers
- Cathodoluminescence study of undoped GaN films: Experiment and calculation
- Measurements and modelling of thermal step current in GaN/SiO2/Si structure
- Morphological, structural and optical properties of GaN grown on porous silicon/Si(100) substrate
- Cathodoluminescence study in AlxGa1−xN structures
- On the use of the thermal step method as a tool for study of space charge in semiconductor gallium nitride: GaN
- Electron beam-induced current investigation of GaN Schottky diode
- Optical properties of GaN grown on porous silicon substrate
- Minority carrier diffusion lengths and optical self‐absorption coefficient in undoped GaN
- Morphological study of GaN layers grown on porous silicon
- Porous silicon as an intermediate buffer layer for GaN growth on (100) Si
Revues de publication
- Journal of Alloys and Compounds × 5
- Applied Physics A × 5
- The European Physical Journal Plus × 3
- Superlattices and Microstructures × 3
- Physica E Low-dimensional Systems and Nanostructures × 2
- Journal of Computational Electronics × 2
Publications par année
- 20262
- 20191
- 20181
- 20174
- 201610
- 20154
- 20142
- 20132
- 20123
- 20111
Collaborations
Établissements partenaires : Faculty of Sciences of Sfax · Institut préparatoire aux études d'ingénieurs de Sfax · University of Monastir · University of Gabès · National Engineering School of Tunis
Pays des co-auteurs : Arabie saoudite
Co-auteurs
- Samir GUERMAZI
- Belgacem El Jani
- Zayani Jaafar Othman
- Omar Rejaiba
- T. Boufaden
- Mariem Chaari
- Z. Fakhfakh
- Férid Ben Nasr
- Raoudha Ben Belgacem
- Youssef Mlik
- R. Abaira
- Sarra Ayed
Données bibliographiques issues d’OpenAlex (base ouverte).
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