Home › Researcher directory › Adel Matoussi
Adel Matoussi
Affiliation : University of Sfax
- 42Publications (affiliation in Tunisia)
- 46Total publications
- 782Citations
- 18h-index
Research profile
Adel Matoussi has 42 indexed publications (2001–2026). Their work appears mainly in “Journal of Alloys and Compounds”, “Applied Physics A” and “The European Physical Journal Plus”. Their most cited article, “Electrical conduction and dielectric studies of ZnO pellets” (2012), has been cited 112 times. 2 of these publications date from the last three years of activity. Their work is co-authored with at least 12 researchers, including institutions in Saudi Arabia.
Is this you? Get your research seen
Create your free DzCademia profile and add your articles: they will show up more easily on Google and in AI assistants like ChatGPT, so more people can read and cite your work.
Create my free profile Add my publicationsResearch areas
- ZnO doping and properties
- Dielectric properties of ceramics
- GaN-based semiconductor devices and materials
- Semiconductor materials and interfaces
- Semiconductor materials and devices
Publications (42)
- Impact of interface states and series resistance on the electrical and dielectric response of ECR-PECVD SiO₂/p-Si MOS structures
- Interface states and series-resistance-controlled electrical behavior quality of ECR-PECVD SiO2/p–Si MOS structure
- A comprehensive study on the interface states in the ECR-PECVD SiO2/p-Si MOS structures analyzed by different method
- AC electrical conduction mechanisms and dielectrical studies of DD3 kaolin sintered at high temperature
- Structural, electric modulus and complex impedance analysis of ZnO/TiO 2 composite ceramics
- Impedance analysis, dielectric relaxation and modulus behaviour of ZnO-Sn2O3 ceramics
- Erratum to: Series and parallel resistance effects on the C–V and G–V characteristics of Al/SiO $$_2$$ 2 /Si structure
- Erratum to: Study of various technological parameters on the C-Vg and the G-Vg characteristics of MOS structures
- Solid state synthesis and structural characterization of zinc titanates
- Structural and optical properties of ZnO/TiO2 composites
- Morphological and optical studies of zinc oxide doped MgO
- Structural and optical properties of zinc oxide doped by V2O5 synthesized by solid-state reaction
- Electrical and dielectric properties of In2S3 synthesized by solid state reaction
- Conduction mechanism and dielectric properties of ZnO/MgO solid composites
- Optical and Raman studies of Zn 1-x Mg x O ceramic pellets
- Synthesis and enhanced effect of vanadium on structural and optical properties of zinc oxide
- Series and parallel resistance effects on the C–V and G–V characteristics of $$\mathrm{Al}/\mathrm{SiO}_{2}$$ Al / SiO 2 /Si structure
- Study of various technological parameters on the C-Vg and the G-Vg characteristics of MOS structures
- Studies on structural and electrical properties of ZnO/TiO 2 composite materials
- Synthesis and structural properties of vanadium doped zinc oxide
- AC conductivity and structural properties of Mg-doped ZnO ceramic
- Effects of series and parallel resistances on the C-V characteristics of silicon-based metal oxide semiconductor (MOS) devices
- Optical and structural properties of Zn1−x Mg x O ceramic materials
- Dielectric study on Zn1−x Mg x O ceramic materials prepared by the solid-state route
- Effect of Sn2O3 doping on structural, optical and dielectric properties of ZnO ceramics
- Structural and dielectric properties of undoped ZnO pellets prepared by solid state route
- Electrical conduction and dielectric studies of ZnO pellets
- Dielectric and conductivity investigations of rutile titanium dioxide single crystals
- Structural and Optical Properties of Znx-1MgxO Ceramic Composites
- Structural and Dielectric Properties of Sintering Zinc Oxide Bulk Ceramic
- Luminescent properties of GaN films grown on porous silicon substrate
- Cathodoluminescence investigations of GaAs thin layers
- Cathodoluminescence study of undoped GaN films: Experiment and calculation
- Measurements and modelling of thermal step current in GaN/SiO2/Si structure
- Morphological, structural and optical properties of GaN grown on porous silicon/Si(100) substrate
- Cathodoluminescence study in AlxGa1−xN structures
- On the use of the thermal step method as a tool for study of space charge in semiconductor gallium nitride: GaN
- Electron beam-induced current investigation of GaN Schottky diode
- Optical properties of GaN grown on porous silicon substrate
- Minority carrier diffusion lengths and optical self‐absorption coefficient in undoped GaN
- Morphological study of GaN layers grown on porous silicon
- Porous silicon as an intermediate buffer layer for GaN growth on (100) Si
Publication venues
- Journal of Alloys and Compounds × 5
- Applied Physics A × 5
- The European Physical Journal Plus × 3
- Superlattices and Microstructures × 3
- Physica E Low-dimensional Systems and Nanostructures × 2
- Journal of Computational Electronics × 2
Publications per year
- 20262
- 20191
- 20181
- 20174
- 201610
- 20154
- 20142
- 20132
- 20123
- 20111
Collaborations
Partner institutions : Faculty of Sciences of Sfax · Institut préparatoire aux études d'ingénieurs de Sfax · University of Monastir · University of Gabès · National Engineering School of Tunis
Co-authors’ countries : Saudi Arabia
Co-authors
- Samir GUERMAZI
- Belgacem El Jani
- Zayani Jaafar Othman
- Omar Rejaiba
- T. Boufaden
- Mariem Chaari
- Z. Fakhfakh
- Férid Ben Nasr
- Raoudha Ben Belgacem
- Youssef Mlik
- R. Abaira
- Sarra Ayed
Bibliographic data from OpenAlex (open database).
Why choose Dzcademia?
Profiles, articles and conference contributions: give your research a structured public presence. Integrated metadata help search engines and AI assistants identify your work and understand its references.
Comment with Google
Sign in with Google to comment directly on this page.