A. Nouaçry

الانتماء : Université Sultan Moulay Slimane

15منشورات (انتماء مغربي)
19مجموع المنشورات
44الاستشهادات
4مؤشر h

الملف البحثي

لدى A. Nouaçry 15 منشور(ات) مفهرسة (1997–2026). تُنشر أعماله أساسًا في «Lecture notes in networks and systems»، «PRSM» و«Microelectronics Journal». أكثر مقالاته استشهادًا هو «Dual material gate-graded channel-gate stack (DMG-GC-Stack) surrounding gate MOSFET: Analytical threshold voltage (VTH) and subthreshold swi» (2011)، وقد استُشهد به 8 مرة. 4 من هذه المنشورات تعود إلى آخر ثلاث سنوات من النشاط. شارك في تأليف أعماله 12 باحثًا على الأقل.

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إنشاء ملفي المجاني إضافة منشوراتي

مجالات البحث

Advancements in Semiconductor Devices and Circuit Design
Semiconductor materials and devices
Low-power high-performance VLSI design
Silicon Carbide Semiconductor Technologies
Vehicle Dynamics and Control Systems

المنشورات (15)

A neural network-based optimization approach for autonomous ground vehicle adaptive lateral control
2026 · Scientific African
Seatbelt Detection Using YOLO Deep Learning Model in Moroccan Roads
2026 · Lecture notes in networks and systems
Optimal Adaptive Neural Network Based PID Using Evolutionary Strategy Optimization for Autonomous Ground Vehicle
2026 · Lecture notes in networks and systems
Adaptive super-twisting sliding mode steering control of autonomous ground vehicles under critical driving conditions: an integrated model-based design validation approach
2026 · Scientific Reports
Dual material gate-graded channel-gate stack (DMG-GC-Stack) surrounding gate MOSFET: Analytical threshold voltage (VTH) and subthreshold swing (S) models
2011 · استُشهد به 8 مرة
AnalyticalVTHandSmodels for (DMG–GC–stack) surrounding-gate MOSFET
2011 · International Journal of Electronics · استُشهد به 4 مرة
Investigation on the convergence of the evanescent model and the polynomial model including Effective Conducting Path Effect (ECPE) for the submicronic SDG FD SOI MOSFET
2011 · IEEE Faible Tension Faible Consommation
Investigation on the convergence of the evanescent model and the polynomial model including effective conducting path effect (ECPE): Applied to the submicronic SG FD SOI MOSFET
2011
Investigation In The Convergence Of The Evanescent Model And The Polynomial Model Including Effective Conducting Path Effect (ECPE): Applied To The Submicronic SG FD SOI MOSFET
2011 · PRSM
Impact Of The Effective Conducting Path Effect (ECPE) On The Convergence Of The Evanescent And The Polynomial Models: Applied To The Submicronic MOSFET
2011 · PRSM
Nanotube carbon transistor (CNTFET): I-V and C-V, a qualitative comparison between fettoy simulator and compact model
2009 · استُشهد به 8 مرة
Comparison between the evanescent model, the polynomial model and the polynomial including effective conducting path effect (ECPE)
2009
Relation between the leakage currents and defects in oxide and interface Si/SiO/sub 2/ in MOS devices
2002 · استُشهد به 1 مرة
Effect of defects localised in the oxide of submicrometer NMOS transistor on substrate and drain currents
1999 · Microelectronics Journal · استُشهد به 2 مرة
Relation between the leakage currents and the defects created in the oxide and at the interface in a short channel NMOS transistor
1997 · Microelectronics Journal · استُشهد به 3 مرة

مجلات النشر

Lecture notes in networks and systems × 2
PRSM × 2
Microelectronics Journal × 2
Scientific African × 1
Scientific Reports × 1
International Journal of Electronics × 1

المنشورات حسب السنة

20264
20116
20092
20021
19991
19971

التعاون العلمي

المؤسسات الشريكة : University of Hassan II Casablanca · Sidi Mohamed Ben Abdellah University

المؤلفون المشاركون

البيانات البيبليوغرافية مصدرها OpenAlex (قاعدة مفتوحة).