الرئيسية › دليل الباحثين › A. Bouhdada

A. Bouhdada

الانتماء : University of Hassan II Casablanca

• 27منشورات (انتماء مغربي)
• 30مجموع المنشورات
• 197الاستشهادات
• 8مؤشر h

OpenAlex

مجالات البحث

• Semiconductor materials and devices
• Semiconductor materials and interfaces
• Advancements in Semiconductor Devices and Circuit Design
• Metallic Glasses and Amorphous Alloys
• Magnetic Properties and Applications

المنشورات (27)

• Magnetization studies in amorphous Co80-x Gdx B20
  2011 · PRSM
• Electrical and optical proprieties of photodiodes based on ZnSe material
  2003 · Applied Physics Letters · استُشهد به 22 مرة
• Modeling of the spectral response of PIN photodetectors Impact of exposed zone thickness, surface recombination velocity and trap concentration
  2003 · Microelectronics Reliability · استُشهد به 5 مرة
• Influence of the defects on the I-V characteristics for LDD-nMOSFETs
  2003
• Impact of the defects on the electrical and optical properties of AlGaN ultraviolet photodetectors
  2002 · Journal of Applied Physics · استُشهد به 44 مرة
• Relation between the leakage currents and defects in oxide and interface Si/SiO/sub 2/ in MOS devices
  2002 · استُشهد به 1 مرة
• The n-type metal oxide semiconductor field-effect transistor bias impact on the modelling of the gate-induced drain leakage current
  2002 · Semiconductor Science and Technology · استُشهد به 1 مرة
• Modeling of the I–V Characteristics for LDD‐nMOSFETs in Relation with Defects Induced by Hot‐Carrier Injection
  2002 · Active and Passive Electronic Components
• Modeling of gate-induced drain leakage current in n-type metal–oxide–semiconductor field effect transistor
  2001 · Journal of Applied Physics · استُشهد به 8 مرة
• Modeling of the threshold voltage variation for a stressed submicronic MOSFET
  2001 · International Conference on Microelectronics (ICM) · استُشهد به 6 مرة
• Magnetic study in amorphous Fe67Y33 alloy
  2001 · Journal of Applied Physics · استُشهد به 2 مرة
• Impact of the Stress on the Sub‐Micron N‐Metal Oxide Semiconductor Field Effect Transistor Characteristics
  2001 · Active and Passive Electronic Components · استُشهد به 2 مرة
• Magnetic coupling in amorphous Fe80−xGdxB20 alloys
  2000 · Physica B Condensed Matter · استُشهد به 15 مرة
• Modeling of the spectral response of AlxGa1−xN Schottky ultraviolet photodetectors
  2000 · Journal of Applied Physics · استُشهد به 11 مرة
• Modeling of the spectral response of AlxGa1−xN p-n junction photodetectors
  2000 · The European Physical Journal Applied Physics · استُشهد به 4 مرة
• Modeling of Interface Defect Distribution for an n‐MOSFETs Under Hot‐Carrier Stressing
  2000 · Active and Passive Electronic Components · استُشهد به 3 مرة
• Modeling of Surface Potential and Threshold Voltage of LDD nMOSFET′s with Localized Defects
  2000 · Active and Passive Electronic Components · استُشهد به 3 مرة
• Modelling of the surface potential evolution for a stressed submicronic MOSFET
  2000 · Microelectronics Journal
• Effect of defects localised in the oxide of submicrometer NMOS transistor on substrate and drain currents
  1999 · Microelectronics Journal · استُشهد به 2 مرة
• Influence of Gd on the Magnetic Properties of Amorphous (Fe1—xGdx)80B20
  1999 · physica status solidi (a) · استُشهد به 2 مرة
• Magnetic properties and exchange interactions in TGdB amorphous alloys (T=FE, Co)
  1999 · Annales de Chimie Science des Matériaux
• New model of gate-induced drain current density in an NMOS transistor
  1998 · Microelectronics Journal · استُشهد به 8 مرة
• Modelling of gate-induced drain leakage in relation to technological parameters and temperature
  1997 · Microelectronics Reliability · استُشهد به 29 مرة
• Two new temperature compensated current sources
  1997 · IEEE Transactions on Circuits and Systems I Fundamental Theory and Applications · استُشهد به 7 مرة
• Relation between the leakage currents and the defects created in the oxide and at the interface in a short channel NMOS transistor
  1997 · Microelectronics Journal · استُشهد به 3 مرة
• Interface states effect and influence of the topological and technological parameters on the transfer inefficiency in the surface charge-coupled device (SCCD)
  1996 · Microelectronics Reliability
• MOS capacitor holding time and diffusion length at DRAM refresh test temperature
  1995 · Microelectronics Journal · استُشهد به 2 مرة

مجلات النشر

• Microelectronics Journal × 5
• Journal of Applied Physics × 4
• Active and Passive Electronic Components × 4
• Microelectronics Reliability × 3
• PRSM × 1
• Applied Physics Letters × 1

المنشورات حسب السنة

• 20111
• 20033
• 20024
• 20014
• 20006
• 19993
• 19981
• 19973
• 19961
• 19951

التعاون العلمي

المؤسسات الشريكة : Université Hassan II Mohammedia · Sidi Mohamed Ben Abdellah University

المؤلفون المشاركون

• R. Marrakh
• Abdelkader Touhami
• A. Hassini
• M. Hanzaz
• Soumia Bakkali
• A. Nouaçry
• Hassan Lassri
• I. Mansouri
• R. Krishnan
• B Chaker
• M. Hamdoun
• B. Alaoui

البيانات البيبليوغرافية مصدرها OpenAlex (قاعدة مفتوحة).