الرئيسية › دليل الباحثين › J. C. Bourgoin

J. C. Bourgoin

الانتماء : Centre National de la Recherche Scientifique · Université Pierre-et-Marie-Curie

• 32منشورات (انتماء فرنسي)
• 384مجموع المنشورات
• 8477الاستشهادات
• 42مؤشر h

OpenAlex

مجالات البحث

• Semiconductor materials and interfaces
• Semiconductor materials and devices
• Silicon and Solar Cell Technologies
• Semiconductor Quantum Structures and Devices
• solar cell performance optimization

المنشورات (32)

• Mobility-lifetime product in epitaxial GaAs X-ray detectors
  2006 · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · استُشهد به 8 مرة
• Prediction of proton-induced degradation of GaAs space solar cells
  2005 · Solar Energy Materials and Solar Cells · استُشهد به 14 مرة
• Modelization of epitaxial GaAs X-ray detectors
  2005 · Solar Energy Materials and Solar Cells · استُشهد به 4 مرة
• A study of deep levels in vanadium-doped GaAs grown by OMVPE
  2003 · Semiconductor Science and Technology · استُشهد به 8 مرة
• Irradiation-induced degradation in solar cell: characterization of recombination centres
  2002 · Semiconductor Science and Technology · استُشهد به 85 مرة
• Characterization of thick epitaxial GaAs layers for X-ray detection
  2002 · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · استُشهد به 18 مرة
• Antisite incorporation during epitaxial growth of GaAs
  2002 · Journal of Crystal Growth · استُشهد به 10 مرة
• Electron conduction in low temperature grown GaAs
  1999 · Solid-State Electronics · استُشهد به 7 مرة
• The behavior of As precipitates in low-temperature-grown GaAs
  1998 · Applied Physics Letters · استُشهد به 21 مرة
• Defect-Enhanced Electron Transport through Semiconductor Barriers
  1998 · physica status solidi (b) · استُشهد به 10 مرة
• Optical and electrical characterization of low temperature grown GaInAs
  1998 · Semiconductor Science and Technology · استُشهد به 4 مرة
• Poole–Frenkel effect assisted emission from deep donor level in chromium doped GaP
  1998 · Applied Physics Letters · استُشهد به 4 مرة
• The DX Center in GaAsP Alloys
  1998 · physica status solidi (b) · استُشهد به 2 مرة
• Free-electron transport in semi-insulating GaAs
  1997 · Journal of Applied Physics · استُشهد به 7 مرة
• Electron transport in low temperature grown GaAs
  1997 · Materials Science and Engineering B · استُشهد به 6 مرة
• Growth and characterization of thick epitaxial GaAs layers
  1997 · International Symposium on Compound Semiconductors (ISCS) · استُشهد به 1 مرة
• Characterization of closed space vapor transport GaP epitaxial layers
  1996 · Journal of Electronic Materials · استُشهد به 1 مرة
• Deep-level analysis of n-type GaAs1−xPx alloys
  1995 · Journal of Applied Physics · استُشهد به 29 مرة
• Intrinsic and extrinsic radiative recombination processes in quantum wells
  1995 · Journal of Luminescence · استُشهد به 2 مرة
• Defects in electron-irradiated GaAlAs alloys
  1993 · Journal of Applied Physics · استُشهد به 12 مرة
• Electrical conduction in low temperature grown InP
  1993 · Applied Physics Letters · استُشهد به 11 مرة
• Electrical conduction in low temperature grown InP
  1993 · Materials Science and Engineering B · استُشهد به 2 مرة
• Electrical conduction in low temperature grown InP
  1993 · European Materials Research Society symposia proceedings
• Minority carrier capture cross section of the EL2 defect in GaAs
  1992 · Applied Physics Letters · استُشهد به 15 مرة
• The DX center in Si-planar-doped AlxGa1−xAs (x=0.32)
  1991 · Journal of Applied Physics · استُشهد به 8 مرة
• Hole-capture cross section ofDXcenters in Ga1−x Alx As
  1991 · Physical review. B, Condensed matter · استُشهد به 5 مرة
• Evidence of native gallium antisite defects in semi-insulating liquid-encapsulated Czochralski-grown GaAs
  1990 · Applied Physics Letters · استُشهد به 16 مرة
• Photoluminescence studies of planar-doped AlxGa1-xAs
  1990 · Semiconductor Science and Technology · استُشهد به 6 مرة
• Luminescence of the D X center in AlGaAs
  1989 · Applied Physics Letters · استُشهد به 21 مرة
• Poole-Frenkel-assisted emission from deep levels in electron-irradiated germanium
  1989 · Semiconductor Science and Technology · استُشهد به 18 مرة
• Correlation of the 0.8 eV Emission Band with the EL6 Center in GaAs
  1989 · MRS Proceedings · استُشهد به 3 مرة
• Electric Field Enhancement of Electron Emission from DX Centers and Consequences
  1989 · MRS Proceedings

مجلات النشر

• Applied Physics Letters × 6
• Semiconductor Science and Technology × 5
• Journal of Applied Physics × 4
• Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment × 2
• Solar Energy Materials and Solar Cells × 2
• physica status solidi (b) × 2

المنشورات حسب السنة

• 20061
• 20052
• 20031
• 20023
• 19991
• 19985
• 19973
• 19961
• 19952
• 19934

التعاون العلمي

المؤسسات الشريكة : University of Monastir · Technicolor (France) · Université Paris Diderot · École Normale Supérieure - PSL · Tunis University

بلدان المؤلفين المشاركين : تونس · بلغاريا

المؤلفون المشاركون

• G.C. Sun
• Julien Nagle
• Mimoun Zazoui
• Max Stellmacher
• Hans Jürgen von Bardeleben
• Mohamed Gandouzi
• N.X Nghia
• Bernard Pajot
• C. Grattepain
• J. Barrau
• Renato Bisaro
• D. Stiévenard

البيانات البيبليوغرافية مصدرها OpenAlex (قاعدة مفتوحة).