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J. C. Bourgoin
Affiliation : Centre National de la Recherche Scientifique · Université Pierre-et-Marie-Curie
- 32Publications (affiliation in France)
- 384Total publications
- 8477Citations
- 42h-index
Research profile
J. C. Bourgoin has 32 indexed publications (1989–2006). Their work appears mainly in “Applied Physics Letters”, “Semiconductor Science and Technology” and “Journal of Applied Physics”. Their most cited article, “Irradiation-induced degradation in solar cell: characterization of recombination centres” (2002), has been cited 85 times. 3 of these publications date from the last three years of activity. Their work is co-authored with at least 12 researchers, including institutions in Tunisia, Bulgaria.
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Create my free profile Add my publicationsResearch areas
- Semiconductor materials and interfaces
- Semiconductor materials and devices
- Silicon and Solar Cell Technologies
- Semiconductor Quantum Structures and Devices
- solar cell performance optimization
Publications (32)
- Mobility-lifetime product in epitaxial GaAs X-ray detectors
- Prediction of proton-induced degradation of GaAs space solar cells
- Modelization of epitaxial GaAs X-ray detectors
- A study of deep levels in vanadium-doped GaAs grown by OMVPE
- Irradiation-induced degradation in solar cell: characterization of recombination centres
- Characterization of thick epitaxial GaAs layers for X-ray detection
- Antisite incorporation during epitaxial growth of GaAs
- Electron conduction in low temperature grown GaAs
- The behavior of As precipitates in low-temperature-grown GaAs
- Defect-Enhanced Electron Transport through Semiconductor Barriers
- Optical and electrical characterization of low temperature grown GaInAs
- Poole–Frenkel effect assisted emission from deep donor level in chromium doped GaP
- The DX Center in GaAsP Alloys
- Free-electron transport in semi-insulating GaAs
- Electron transport in low temperature grown GaAs
- Growth and characterization of thick epitaxial GaAs layers
- Characterization of closed space vapor transport GaP epitaxial layers
- Deep-level analysis of n-type GaAs1−xPx alloys
- Intrinsic and extrinsic radiative recombination processes in quantum wells
- Defects in electron-irradiated GaAlAs alloys
- Electrical conduction in low temperature grown InP
- Electrical conduction in low temperature grown InP
- Electrical conduction in low temperature grown InP
- Minority carrier capture cross section of the EL2 defect in GaAs
- The DX center in Si-planar-doped AlxGa1−xAs (x=0.32)
- Hole-capture cross section ofDXcenters in Ga1−x Alx As
- Evidence of native gallium antisite defects in semi-insulating liquid-encapsulated Czochralski-grown GaAs
- Photoluminescence studies of planar-doped AlxGa1-xAs
- Luminescence of the D X center in AlGaAs
- Poole-Frenkel-assisted emission from deep levels in electron-irradiated germanium
- Correlation of the 0.8 eV Emission Band with the EL6 Center in GaAs
- Electric Field Enhancement of Electron Emission from DX Centers and Consequences
Publication venues
- Applied Physics Letters × 6
- Semiconductor Science and Technology × 5
- Journal of Applied Physics × 4
- Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment × 2
- Solar Energy Materials and Solar Cells × 2
- physica status solidi (b) × 2
Publications per year
- 20061
- 20052
- 20031
- 20023
- 19991
- 19985
- 19973
- 19961
- 19952
- 19934
Collaborations
Partner institutions : University of Monastir · Technicolor (France) · Université Paris Diderot · École Normale Supérieure - PSL · Tunis University
Co-authors’ countries : Tunisia · Bulgaria
Co-authors
- G.C. Sun
- Julien Nagle
- Mimoun Zazoui
- Max Stellmacher
- Hans Jürgen von Bardeleben
- Mohamed Gandouzi
- N.X Nghia
- Bernard Pajot
- C. Grattepain
- J. Barrau
- Renato Bisaro
- D. Stiévenard
Bibliographic data from OpenAlex (open database).
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