الرئيسية › دليل الباحثين › S. Ilahi
S. Ilahi
الانتماء : University of Monastir · University of Carthage · Université Tunis Carthage
- 31منشورات (انتماء تونسي)
- 37مجموع المنشورات
- 295الاستشهادات
- 11مؤشر h
الملف البحثي
لدى S. Ilahi 31 منشور(ات) مفهرسة (2012–2026). تُنشر أعماله أساسًا في «Springer eBooks»، «Journal of Applied Physics» و«Applied Physics A». أكثر مقالاته استشهادًا هو «Temperature coefficient of resistance and thermal conductivity of Vanadium oxide ‘Big Mac’ sandwich structure» (2015)، وقد استُشهد به 41 مرة. 11 من هذه المنشورات تعود إلى آخر ثلاث سنوات من النشاط. شارك في تأليف أعماله 12 باحثًا على الأقل.
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إنشاء ملفي المجاني إضافة منشوراتيمجالات البحث
- Advanced Semiconductor Detectors and Materials
- Thermography and Photoacoustic Techniques
- Semiconductor materials and interfaces
- solar cell performance optimization
- Thermal properties of materials
المنشورات (31)
- Photothermal Techniques: State of the Art in Semiconductor Nonradiative Recombination Studies
- Experimental Setup of Photothermal Beam Deflection Techniques
- Three-Layer Photothermal Beam Deflection Modeling for Extraction of Nonradiative Electronic Properties in GaAs/InAs Quantum-Dot Heterostructures
- One Photothermal Techniques Layer Model for Nonradiative Recombination Parameters Investigation: Application to Bulk Semicondutors
- Nonradiative Recombination Parameters in Semiconductors
- Carrier Transport in Semiconductor Heterostructures: A Two-Layer PTD Approach and Applications
- Influence of bismuth incorporation on the optical and thermal properties of GaSbBi alloys studied by photothermal deflection
- Opto-Thermal Characterization of GaAsPN Materials Using the Photothermal Deflection Technique for Tandem Solar Cells on Silicon
- Thermal Properties in Polymer-Nanoparticle Composites: Applications in Therapeutic and Biomedical Engineering
- Quantitative photothermal investigation of nonradiative recombination parameters in GaAs/InAs(QD)/GaAs quantum dot structures using a three-layer laser beam deflection model
- Effects of TBPO-capped CdSe nanoparticles concentration on thermal conductivity and diffusivity in Poly (3-hexylthiophene) thin films
- Doping effects on minority carrier parameters in bulk GaAs
- High minority carrier mobility and electronic diffusion length in annealed GaInAsSb/GaSb active layer in Vertical Cavity Surface Emitting Laser (VCSEL)
- Thermal annealing effects on microstructural and thermo-optical properties of V/V2O5 alternating layers structure
- Photothermal deflection study of V/V2O5 alternating layers structure: effect of annealing atmospheres on thermal and optical properties
- Improvement of carriers diffusion length and mobility in annealed GaAsPN materials for intermediate band solar cells
- Significant improvement of thermal conductivity and bandgap energy blue shift in annealed GaInAsSb/GaSb
- Photothermal deflection technique investigation of thermal annealing effects of AlGaAsSb/GaSb laser structure: Non-radiative recombination parameters enhancement
- Thermal annealing effects on AlGaAsSb/GaSb laser structure: Bandgap energy blueshift and thermal conductivity enhancement
- Photothermal deflection technique investigation of annealing temperature and time effects on optical and thermal conductivity of V/V 2 O 5 alternating layers structure
- Temperature coefficient of resistance and thermal conductivity of Vanadium oxide ‘Big Mac’ sandwich structure
- Optical absorption and thermal conductivity of GaAsPN absorbers grown on GaP in view of their use in multijunction solar cells
- Effect of TBPO-capped CdSe nanoparticles concentration on sub-bandgap absorption in poly(3-hexylthiophene) thin films studied by photothermal deflection spectroscopy
- Photothermal investigation of poly (3-hexylthiophene): ZnSe nanocomposites
- Interface recombination velocity measurement in SiO2/Si
- Two-layer photo-thermal deflection model to study the non-radiative recombination process: Application to Ga0.7In0.3As0.23Sb0.77/GaSb and Al0.3Ga0.7As0.08Sb0.92/GaSb laser structures
- Non-radiative recombination process in BGaAs/GaAs alloys: Two layer photothermal deflection model
- Shift of the gap energy and thermal conductivity in BGaAs/GaAs alloys
- Publisher’s Note: “Two-layer photo-thermal deflection model to study the non-radiative recombination process: Application to Ga0.7In0.3As0.23Sb0.77/GaSb and Al0.3Ga0.7As0.08Sb0.92/GaSb laser structures” [J. Appl. Phys. 113, 183705 (2013)]
- Photothermal deflection spectroscopy PDS investigation of optical and thermal properties of BGaAs/GaAs alloys
- Photothermal deflection investigation of bulk Si and GaSb transport properties
مجلات النشر
- Springer eBooks × 6
- Journal of Applied Physics × 3
- Applied Physics A × 3
- Physica B Condensed Matter × 3
- Materials Research Bulletin × 2
- Optics & Laser Technology × 2
المنشورات حسب السنة
- 20267
- 20252
- 20242
- 20232
- 20222
- 20202
- 20181
- 20172
- 20154
- 20141
التعاون العلمي
المؤسسات الشريكة : Tunis El Manar University · Tunis University · Research and Technology Center of Energy
المؤلفون المشاركون
- N. Yacoubi
- Anouar Khalfaoui
- Dhekra Loubiri
- H. Mâaref
- F. Saidi
- Zied Ben Hamed
- Fayçal Kouki
- M. Baïra
- Radhia Hamila
- S. Bouagila
- M.A.K. Sanhoury
- E. Helel
البيانات البيبليوغرافية مصدرها OpenAlex (قاعدة مفتوحة).
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