الرئيسية › دليل الباحثين › M. Baïra

M. Baïra

الانتماء : University of Monastir

• 28منشورات (انتماء تونسي)
• 33مجموع المنشورات
• 404الاستشهادات
• 13مؤشر h

ORCIDOpenAlex

مجالات البحث

• Semiconductor Quantum Structures and Devices
• Quantum Dots Synthesis And Properties
• Quantum and electron transport phenomena
• Semiconductor materials and interfaces
• GaN-based semiconductor devices and materials

المنشورات (28)

• Quantitative photothermal investigation of nonradiative recombination parameters in GaAs/InAs(QD)/GaAs quantum dot structures using a three-layer laser beam deflection model
  2024 · Journal of Applied Physics · استُشهد به 3 مرة
• Schottky barrier inhomogeneity in (Pd / Au) Al0.22 Ga0.78N/GaN/SiC HEMT: Triple Gaussian distributions
  2021 · Chinese Journal of Physics · استُشهد به 17 مرة
• Evidence of Poole-frenkel and Fowler-Nordheim tunneling transport mechanisms in leakage current of (Pd/Au)/Al0.22Ga0.78N/GaN heterostructures
  2020 · Solid State Communications · استُشهد به 35 مرة
• Correlation between Kink effect and trapping mechanism through H1 hole trap in Al0.22Ga0.78N/GaN/SiC HEMTs by current DLTS: field effect enhancement
  2020 · Applied Physics A · استُشهد به 13 مرة
• Cryogenic investigation of the negative pinch-off voltage Vpinch-off, leakage current and interface defects in the Al0.22Ga0.78N/GaN/SiC HEMT
  2020 · Microelectronics Reliability · استُشهد به 12 مرة
• Linear and Nonlinear Intersubband Optical Properties of Direct Band Gap GeSn Quantum Dots
  2019 · Nanomaterials · استُشهد به 25 مرة
• Investigation of GeSn/Ge quantum dots’ optical transitions for integrated optics on Si substrate
  2019 · Results in Physics · استُشهد به 10 مرة
• Intersubband Optical Nonlinearity of GeSn Quantum Dots under Vertical Electric Field
  2019 · Micromachines · استُشهد به 7 مرة
• C-DLTS interface defects in Al0.22Ga0.78N/GaN HEMTs on SiC: Spatial location of E2 traps
  2018 · Physica E Low-dimensional Systems and Nanostructures · استُشهد به 16 مرة
• Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate
  2018 · Nanoscale Research Letters · استُشهد به 13 مرة
• Tuning direct bandgap GeSn/Ge quantum dots' interband and intraband useful emission wavelength: Towards CMOS compatible infrared optical devices
  2018 · Superlattices and Microstructures · استُشهد به 10 مرة
• Investigation of the InAs/GaAs Quantum Dots’ Size: Dependence on the Strain Reducing Layer’s Position
  2015 · Materials · استُشهد به 32 مرة
• Electronic and transport properties of AlInN/AlN/GaN high electron mobility transistors
  2015 · Superlattices and Microstructures · استُشهد به 24 مرة
• Evolution of InAs/GaAs QDs Size with the Growth Rate: A Numerical Investigation
  2015 · Journal of Nanomaterials · استُشهد به 11 مرة
• Numerical investigation of the postgrowth intermixing effects on the optical properties of InAs/GaAs quantum dots
  2014 · Physica B Condensed Matter · استُشهد به 5 مرة
• Non-radiative recombination process in BGaAs/GaAs alloys: Two layer photothermal deflection model
  2013 · Journal of Alloys and Compounds · استُشهد به 17 مرة
• Hydrostatic pressure and temperature effects on nonlinear optical rectification in a lens shape InAs/GaAs quantum dot
  2012 · Journal of Luminescence · استُشهد به 66 مرة
• Optical investigation of InAs quantum dots inserted in AlGaAs/GaAs modulation doped heterostructure
  2011 · Journal of Applied Physics · استُشهد به 11 مرة
• Power density and temperature dependent multi-excited states in InAs/GaAs quantum dots
  2010 · Journal of Nanoparticle Research · استُشهد به 13 مرة
• Temperature dependence of optical properties of InAs/GaAs self-organized quantum dots
  2009 · Journal of Applied Physics · استُشهد به 15 مرة
• Broken symmetry in laterally coupled InAs/GaAs quantum dots molecule
  2008 · Journal of Applied Physics · استُشهد به 9 مرة
• Capacitance–voltage analysis of InAs quantum dots grown on InAlAs/InP(0 0 1)
  2008 · Microelectronics Journal · استُشهد به 6 مرة
• Deep level transient spectroscopy studies at low temperature of In0.52Al0.48As epilayers
  2007 · Physica B Condensed Matter · استُشهد به 2 مرة
• Toward long wavelength low density InAs/GaAs quantum dots
  2006 · Physics Letters A · استُشهد به 13 مرة
• Hole emission processes from InAs quantum dots grown on p-type InAlAs/InP(0 0 1)
  2006 · Semiconductor Science and Technology · استُشهد به 5 مرة
• Optical characterisation of single InAs quantum dots on GaAs substrate emitting at 1.3 μm
  2006 · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · استُشهد به 1 مرة
• Effective generation lifetime depth profile in InAs quantum dots grown on InAlAs/InP(0 0 1)
  2005 · Semiconductor Science and Technology · استُشهد به 7 مرة
• Capacitance–voltage profile characteristics of Schottky barrier structure with InAs quantum dots grown on InAlAs/InP(001)
  2005 · Materials Science and Engineering C · استُشهد به 1 مرة

مجلات النشر

• Journal of Applied Physics × 4
• Superlattices and Microstructures × 2
• Physica B Condensed Matter × 2
• Semiconductor Science and Technology × 2
• Chinese Journal of Physics × 1
• Solid State Communications × 1

المنشورات حسب السنة

• 20241
• 20211
• 20203
• 20193
• 20183
• 20153
• 20141
• 20131
• 20121
• 20111

التعاون العلمي

المؤسسات الشريكة : University of Carthage · Centre National de la Recherche Scientifique · Institut National des Sciences Appliquées de Lyon · King Saud University · Military Academy, Tunisia

بلدان المؤلفين المشاركين : فرنسا · السعودية

المؤلفون المشاركون

• H. Mâaref
• Larbi Sfaxi
• I. Jabbari
• Bouraoui Ilahi
• Lotfi Bouzaiene
• Ridha Ajjel
• Ridha Mghaieth
• Manel Souaf
• S. Ilahi
• F. Saidi
• N. Yacoubi
• Houcine Mejri

البيانات البيبليوغرافية مصدرها OpenAlex (قاعدة مفتوحة).