Accueil › Annuaire des chercheurs › S. Ilahi
S. Ilahi
Affiliation : University of Monastir · University of Carthage · Université Tunis Carthage
- 31Publications (affiliation tunisienne)
- 37Publications au total
- 295Citations
- 11Indice h
Profil de recherche
S. Ilahi compte 31 publications référencées (2012–2026). Ses travaux paraissent principalement dans « Springer eBooks », « Journal of Applied Physics » et « Applied Physics A ». Son article le plus cité, « Temperature coefficient of resistance and thermal conductivity of Vanadium oxide ‘Big Mac’ sandwich structure » (2015), a été cité 41 fois. 11 de ces publications datent des trois dernières années d’activité. Ses travaux sont cosignés avec au moins 12 chercheurs.
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Créer mon profil gratuit Ajouter mes publicationsDomaines de recherche
- Advanced Semiconductor Detectors and Materials
- Thermography and Photoacoustic Techniques
- Semiconductor materials and interfaces
- solar cell performance optimization
- Thermal properties of materials
Publications (31)
- Photothermal Techniques: State of the Art in Semiconductor Nonradiative Recombination Studies
- Experimental Setup of Photothermal Beam Deflection Techniques
- Three-Layer Photothermal Beam Deflection Modeling for Extraction of Nonradiative Electronic Properties in GaAs/InAs Quantum-Dot Heterostructures
- One Photothermal Techniques Layer Model for Nonradiative Recombination Parameters Investigation: Application to Bulk Semicondutors
- Nonradiative Recombination Parameters in Semiconductors
- Carrier Transport in Semiconductor Heterostructures: A Two-Layer PTD Approach and Applications
- Influence of bismuth incorporation on the optical and thermal properties of GaSbBi alloys studied by photothermal deflection
- Opto-Thermal Characterization of GaAsPN Materials Using the Photothermal Deflection Technique for Tandem Solar Cells on Silicon
- Thermal Properties in Polymer-Nanoparticle Composites: Applications in Therapeutic and Biomedical Engineering
- Quantitative photothermal investigation of nonradiative recombination parameters in GaAs/InAs(QD)/GaAs quantum dot structures using a three-layer laser beam deflection model
- Effects of TBPO-capped CdSe nanoparticles concentration on thermal conductivity and diffusivity in Poly (3-hexylthiophene) thin films
- Doping effects on minority carrier parameters in bulk GaAs
- High minority carrier mobility and electronic diffusion length in annealed GaInAsSb/GaSb active layer in Vertical Cavity Surface Emitting Laser (VCSEL)
- Thermal annealing effects on microstructural and thermo-optical properties of V/V2O5 alternating layers structure
- Photothermal deflection study of V/V2O5 alternating layers structure: effect of annealing atmospheres on thermal and optical properties
- Improvement of carriers diffusion length and mobility in annealed GaAsPN materials for intermediate band solar cells
- Significant improvement of thermal conductivity and bandgap energy blue shift in annealed GaInAsSb/GaSb
- Photothermal deflection technique investigation of thermal annealing effects of AlGaAsSb/GaSb laser structure: Non-radiative recombination parameters enhancement
- Thermal annealing effects on AlGaAsSb/GaSb laser structure: Bandgap energy blueshift and thermal conductivity enhancement
- Photothermal deflection technique investigation of annealing temperature and time effects on optical and thermal conductivity of V/V 2 O 5 alternating layers structure
- Temperature coefficient of resistance and thermal conductivity of Vanadium oxide ‘Big Mac’ sandwich structure
- Optical absorption and thermal conductivity of GaAsPN absorbers grown on GaP in view of their use in multijunction solar cells
- Effect of TBPO-capped CdSe nanoparticles concentration on sub-bandgap absorption in poly(3-hexylthiophene) thin films studied by photothermal deflection spectroscopy
- Photothermal investigation of poly (3-hexylthiophene): ZnSe nanocomposites
- Interface recombination velocity measurement in SiO2/Si
- Two-layer photo-thermal deflection model to study the non-radiative recombination process: Application to Ga0.7In0.3As0.23Sb0.77/GaSb and Al0.3Ga0.7As0.08Sb0.92/GaSb laser structures
- Non-radiative recombination process in BGaAs/GaAs alloys: Two layer photothermal deflection model
- Shift of the gap energy and thermal conductivity in BGaAs/GaAs alloys
- Publisher’s Note: “Two-layer photo-thermal deflection model to study the non-radiative recombination process: Application to Ga0.7In0.3As0.23Sb0.77/GaSb and Al0.3Ga0.7As0.08Sb0.92/GaSb laser structures” [J. Appl. Phys. 113, 183705 (2013)]
- Photothermal deflection spectroscopy PDS investigation of optical and thermal properties of BGaAs/GaAs alloys
- Photothermal deflection investigation of bulk Si and GaSb transport properties
Revues de publication
- Springer eBooks × 6
- Journal of Applied Physics × 3
- Applied Physics A × 3
- Physica B Condensed Matter × 3
- Materials Research Bulletin × 2
- Optics & Laser Technology × 2
Publications par année
- 20267
- 20252
- 20242
- 20232
- 20222
- 20202
- 20181
- 20172
- 20154
- 20141
Collaborations
Établissements partenaires : Tunis El Manar University · Tunis University · Research and Technology Center of Energy
Co-auteurs
- N. Yacoubi
- Anouar Khalfaoui
- Dhekra Loubiri
- H. Mâaref
- F. Saidi
- Zied Ben Hamed
- Fayçal Kouki
- M. Baïra
- Radhia Hamila
- S. Bouagila
- M.A.K. Sanhoury
- E. Helel
Données bibliographiques issues d’OpenAlex (base ouverte).
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