الرئيسية › دليل الباحثين › Madani Labed

Madani Labed

الانتماء : University of Biskra

• 16منشورات (انتماء جزائري)
• 68مجموع المنشورات
• 865الاستشهادات
• 17مؤشر h

ORCIDOpenAlex

مجالات البحث

• Ga2O3 and related materials
• Semiconductor materials and interfaces
• Semiconductor materials and devices
• 2D Materials and Applications
• Silicon Carbide Semiconductor Technologies

المنشورات (16)

• Impact of defects on the electrical characteristics of an IGZO phototransistors: simulation and analysis
  2025 · Journal of Optics
• Interface engineering of p-type quaternary metal oxide semiconductor interlayer-embedded β-Ga2O3 Schottky barrier diode
  2022 · Materials Today Physics · استُشهد به 33 مرة
• Interface engineering of β-Ga2O3 MOS-type Schottky barrier diode using an ultrathin HfO2 interlayer
  2022 · Surfaces and Interfaces · استُشهد به 13 مرة
• Physical Operations of a Self-Powered IZTO/β-Ga2O3 Schottky Barrier Diode Photodetector
  2022 · Nanomaterials · استُشهد به 12 مرة
• Control of Ni/β-Ga2O3 Vertical Schottky Diode Output Parameters at Forward Bias by Insertion of a Graphene Layer
  2022 · Nanomaterials · استُشهد به 7 مرة
• Study of a Solar-Blind Photodetector Based on an IZTO/β-Ga2O3/ITO Schottky Diode
  2022 · Journal of Electronic Materials · استُشهد به 7 مرة
• Schottky contact diameter effect on the electrical properties and interface states of Ti/Au/p-AlGaAs/GaAs/Au/Ni/Au Be-doped p-type MBE Schottky diodes
  2022 · Semiconductor Science and Technology · استُشهد به 5 مرة
• Investigation of Deep Defects and Their Effects on the Properties of NiO/Β- Ga2O3 Heterojuncion Diodes
  2022 · SSRN Electronic Journal
• Low Temperature Modeling of Ni/β-Ga 2 O 3 Schottky Barrier Diode Interface
  2021 · ACS Applied Electronic Materials · استُشهد به 33 مرة
• Modeling and analyzing temperature-dependent parameters of Ni/ β -Ga 2 O 3 Schottky barrier diode deposited by confined magnetic field-based sputtering
  2021 · Semiconductor Science and Technology · استُشهد به 23 مرة
• Study on the improvement of the open-circuit voltage of NiOx/Si heterojunction solar cell
  2021 · Optical Materials · استُشهد به 20 مرة
• Study and optimization of Cu2O/AZO hetero-junction solar cell with different buffer layers
  2021 · Optical Materials · استُشهد به 16 مرة
• Enhancement of silicon solar cell performance by introducing selected defects in the SiO2 passivation layer
  2021 · Optik · استُشهد به 12 مرة
• Study and optimization of InGaN Schottky solar cell performance
  2021 · Optik · استُشهد به 12 مرة
• Modeling a Ni/β-Ga 2 O 3 Schottky barrier diode deposited by confined magnetic-field-based sputtering
  2020 · Journal of Physics D Applied Physics · استُشهد به 41 مرة
• Leakage Current Modelling and Optimization of β - Ga 2 O 3 Schottky Barrier Diode with Ni Contact under High Reverse Voltage
  2020 · ECS Journal of Solid State Science and Technology · استُشهد به 21 مرة

مجلات النشر

• Nanomaterials × 2
• Semiconductor Science and Technology × 2
• Optical Materials × 2
• Optik × 2
• Journal of Optics × 1
• Materials Today Physics × 1

المنشورات حسب السنة

• 20251
• 20227
• 20216
• 20202

التعاون العلمي

المؤسسات الشريكة : Sejong University

بلدان المؤلفين المشاركين : كوريا الجنوبية

المؤلفون المشاركون

• Nouredine Sengouga
• Afak Meftah
• Amjad Meftah
• Mohamed Labed
• R. Boumaaraf
• Toufik Tibermacine
• Naceur Khadidja
• Fateh Mehiri
• A. Djemaa
• Rima Cherroun
• Issam Lakhdari
• Amina Benslim

البيانات البيبليوغرافية مصدرها OpenAlex (قاعدة مفتوحة).