الرئيسية › دليل الباحثين › A. Rahal

A. Rahal

الانتماء : University of Sciences and Technology Houari Boumediene

• 17منشورات (انتماء جزائري)
• 25مجموع المنشورات
• 87الاستشهادات
• 6مؤشر h

OpenAlex

مجالات البحث

• Thin-Film Transistor Technologies
• Silicon and Solar Cell Technologies
• Semiconductor materials and interfaces
• Organic Electronics and Photovoltaics
• ZnO doping and properties

المنشورات (17)

• High sensing efficiency for low NH3 vapour concentration of thin ZnO/p-Si hetero-junctions
  2025 · Sensors and Actuators A Physical · استُشهد به 2 مرة
• Study of boron doped amorphous silicon lightly hydrogenated prepared by DC magnetron sputtering for infrared detectors applications
  2020 · Infrared Physics & Technology · استُشهد به 13 مرة
• Study of morphological and electrical properties of the ZnO/p-Si hetero-junction: Application to sensing efficiency of low concentration of ethanol vapor at room temperature
  2020 · Materials Science in Semiconductor Processing · استُشهد به 10 مرة
• Numerical simulation and validity of the surface photovoltage method in amorphous silicon with a Schottky contact
  2018 · Semiconductor Science and Technology · استُشهد به 1 مرة
• Temperature effect on hydrogenated amorphous carbon leading to hydrogenated graphene by pulsed laser deposition
  2017 · Applied Surface Science · استُشهد به 11 مرة
• Properties of a‐SiGe:H thin films: correlation between photosensitivity and density of states
  2014 · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics
• The annealing temperature effect on the electrical properties of boron‐doped hydrogenated amorphous silicon a‐Si:H(B)
  2010 · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · استُشهد به 9 مرة
• Deposition temperature effects on the characteristics of a‐Si:H deposited by pulsed DC magnetron sputtering
  2009 · physica status solidi (a) · استُشهد به 3 مرة
• Effects of trimethylphosphine incorporation on hydrogenated amorphous silicon (a-Si:H) properties
  2009 · Physics Procedia · استُشهد به 2 مرة
• Effects of Hydrogen Partial Pressure on Boron-Doped Hydrogenated Amorphous Silicon (a-Si:H(B)) Properties
  2009 · Materials science forum · استُشهد به 1 مرة
• Study of the stability of polycrystalline silicon by means of the behavior of thin film transistors under gate bias stress
  2002 · Journal of Non-Crystalline Solids · استُشهد به 1 مرة
• Density of states in the channel material of low temperature polycrystalline silicon thin film transistors
  2000 · Journal of Non-Crystalline Solids · استُشهد به 12 مرة
• State creation induced by gate bias stress in unhydrogenated polysilicon TFTs
  1999 · Thin Solid Films · استُشهد به 10 مرة
• Leakage Current of Unhydrogenated Solid Phase Crystallized Silicon Thin Film Transistors
  1999 · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · استُشهد به 1 مرة
• Gate bias stress in hydrogenated and unhydrogenated polysilicon thin film transistors
  1998 · Microelectronics Reliability · استُشهد به 4 مرة
• Electronic Transport Properties of High Deposition Rate a-Si:H Material
  1991 · Springer eBooks · استُشهد به 2 مرة
• Study of Band Tails in a-SiGe:H Alloys from Time of Flight and Thermally Stimulated Current Experiments
  1990 · MRS Proceedings · استُشهد به 3 مرة

مجلات النشر

• Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics × 2
• Journal of Non-Crystalline Solids × 2
• Sensors and Actuators A Physical × 1
• Infrared Physics & Technology × 1
• Materials Science in Semiconductor Processing × 1
• Semiconductor Science and Technology × 1

المنشورات حسب السنة

• 20251
• 20202
• 20181
• 20171
• 20141
• 20101
• 20093
• 20021
• 20001
• 19992

التعاون العلمي

المؤسسات الشريكة : Centre National de la Recherche Scientifique · Université Rennes 1 · Laboratoire Universitaire des Sciences Appliquées de Cherbourg · Institut d'Électronique et des Technologies du numéRique · Université de Rennes

بلدان المؤلفين المشاركين : فرنسا

المؤلفون المشاركون

• Rabah Cherfi
• Mohamed Kechouane
• L. Chabane
• Tayeb Mohammed‐Brahim
• H.Y. Seba
• Nabil Khelifati
• Abdelkrim Fedala
• Mohamed Trari
• M. Aoucher
• Lamia Laidoudi
• A. Benabdelmoumen
• M. Abdesselam

البيانات البيبليوغرافية مصدرها OpenAlex (قاعدة مفتوحة).