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M. Vaille
Affiliation : Centre National de la Recherche Scientifique · Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications
- 2Publications (affiliation in France)
- 28Total publications
- 988Citations
- 15h-index
Research profile
M. Vaille has 2 indexed publications (1996–1997). Their work appears mainly in “Journal of Crystal Growth” and “MRS Internet Journal of Nitride Semiconductor Research”. Their most cited article, “High quality GaN grown by MOVPE” (1997), has been cited 76 times. Their work is co-authored with at least 3 researchers.
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Create my free profile Add my publicationsResearch areas
- GaN-based semiconductor devices and materials
- Silicon Carbide Semiconductor Technologies
- Acoustic Wave Resonator Technologies
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and devices
Publications (2)
Publication venues
- Journal of Crystal Growth × 1
- MRS Internet Journal of Nitride Semiconductor Research × 1
Publications per year
- 19971
- 19961
Co-authors
Bibliographic data from OpenAlex (open database).
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