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Home › Researcher directory › M. Bouhouche

M. Bouhouche

Affiliation : Larbi Ben M'hidi University of Oum El Bouaghi

  • 6Publications (affiliation in Algeria)
  • 13Total publications
  • 9Citations
  • 2h-index

Research profile

M. Bouhouche has 6 indexed publications (2009–2026). Their work appears mainly in “Fluctuation and Noise Letters”, “Microelectronics Reliability” and “HAL”. Their most cited article, “Effects of X-ray and Cobalt 60 irradiations on advanced Si/SiGe:C HBTs DC characteristics” (2023), has been cited 2 times. 3 of these publications date from the last three years of activity. Their work is co-authored with at least 3 researchers, including institutions in France.

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Research areas

  • Radiation Effects in Electronics
  • Advancements in Semiconductor Devices and Circuit Design
  • Particle Detector Development and Performance
  • Semiconductor materials and devices
  • Silicon Carbide Semiconductor Technologies

Publications (6)

Publication venues

  • Fluctuation and Noise Letters × 1
  • Microelectronics Reliability × 1
  • HAL × 1
  • European Conference on Radiation and Its Effects on Components and Systems × 1
  • Journal of Semiconductors × 1
  • International Conference on Computer and Electrical Engineering × 1

Publications per year

  • 20262
  • 20251
  • 20231
  • 20131
  • 20091

Collaborations

Partner institutions : Institut d'Électronique et des Systèmes · Centre National de la Recherche Scientifique · Université de Montpellier · STMicroelectronics (France) · University Frères Mentouri Constantine 1

Co-authors’ countries : France

Co-authors

Bibliographic data from OpenAlex (open database).

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