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Y. Monteil
Affiliation : Lyon 1 Université · Laboratoire des Multimatériaux et Interfaces
- 25Publications (affiliation in France)
- 274Total publications
- 2100Citations
- 24h-index
Research profile
Y. Monteil has 25 indexed publications (1996–2010). Their work appears mainly in “Applied Surface Science”, “Journal of Alloys and Compounds” and “Materials Science and Engineering C”. Their most cited article, “Structural phase transition, elastic properties and electronic properties of chalcopyrite CuAlX2 (X=S, Se, Te)” (2009), has been cited 52 times. 10 of these publications date from the last three years of activity. Their work is co-authored with at least 12 researchers, including institutions in Algeria, Tunisia.
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Create my free profile Add my publicationsResearch areas
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and interfaces
- GaN-based semiconductor devices and materials
- Semiconductor Quantum Structures and Devices
- Advanced ceramic materials synthesis
Publications (25)
- Growth temperature effects on boron incorporation and optical properties of BGaAs/GaAs grown by MOCVD
- ChemInform Abstract: Structural Phase Transition, Elastic Properties and Electronic Properties of Chalcopyrite CuAlX2 (X: S, Se, Te)
- Optical properties of BxInyGa1-x-yAs/GaAs grown by Metal Organic Chemical Vapor deposition for solar cell
- Structural phase transition, elastic properties and electronic properties of chalcopyrite CuAlX2 (X=S, Se, Te)
- Structural and optical study of BxInyGa1−x−yAs/GaAs and InyGa1−yAs/GaAs QW's grown by MOCVD
- Clustering effects in optical properties of BGaAs/GaAs epilayers
- Investigation by EELS and TRIM simulation method of the interaction of Ar+ and N+ ions with the InP compound
- AES, LEED and PYS investigation of Au deposits on InSe/Si(111) substrate
- AES, EELS and TRIM investigation of InSb and InP compounds subjected to Ar+ ions bombardment
- Study by EELS and EPES of the stability of InPO4/InP system
- Defect morphology and strain of CVD grown 3C–SiC layers: effect of the carbonization process
- Optical study of BxGa1−xAs/GaAs epilayers
- Comparative optical study of GaAs1−xNx/GaAs and BxGa1−xAs/GaAs epilayers
- Optical investigation of GaAs1−xNx/GaAs heterostructure properties
- Surface rate-limiting steps and modelling of the nitrogen growth kinetics of GaAs1−xNx/GaAs
- Radiative N-localized recombination and confinement in GaAsN/GaAs epilayers and quantum well structures
- Optical study of direct interface in InP/InAlAs/InP double heterostructures grown by MOCVD
- Alloy broadening effect on optical properties of InGaAs grown by MOCVD with TMAs precursor
- The effect of heating on InGaAs/InP(1 0 0) and InPO4/InP(1 0 0)
- Optical properties of InP/InAlAs/InP grown by MOCVD on (100) substrates: influence of V/III molar ratio
- Excitons localization effects in GaAsN/GaAs epilayers grown by MOCVD
- Optical study of inverted interface in InP/InAlAs/InP structures grown by MOCVD
- Initial stages of InP/GaP (100) and (111)A,B grown by metal organic chemical vapor deposition
- A comparative study of heterostructures InP/GaAs (001) and InP/GaAs (111) grown by metalorganic chemical vapor deposition
- Effects of the electron beam on InP(100)
Publication venues
- Applied Surface Science × 4
- Journal of Alloys and Compounds × 3
- Materials Science and Engineering C × 3
- IEE Proceedings - Optoelectronics × 2
- Microelectronics Journal × 2
- ChemInform × 1
Publications per year
- 20103
- 20095
- 20082
- 20052
- 20043
- 20034
- 20022
- 20001
- 19991
- 19981
Collaborations
Partner institutions : Centre National de la Recherche Scientifique · École Nationale Polytechnique d'Oran · Université Oran 1 Ahmed Ben Bella · Ecole Normale Supérieure d'Oran · University of Monastir
Co-authors’ countries : Algeria · Tunisia
Co-authors
- Hervé Dumont
- Laurent Auvray
- Véronique Soulière
- C. Jardin
- Philippe Rodriguez
- M’hamed Bouslama
- J. Dazord
- F. Hassen
- E. Bustarret
- H. Mâaref
- J. Davenas
- F. Saidi
Bibliographic data from OpenAlex (open database).
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