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D. Madi
Affiliation : University of Bouira
- 16Publications (affiliation in Algeria)
- 22Total publications
- 121Citations
- 8h-index
Research profile
D. Madi has 16 indexed publications (2009–2026). Their work appears mainly in “Applied Physics A”, “Journal of Ovonic Research” and “Springer proceedings in energy”. Their most cited article, “Mechanism for phosphorus deactivation in silicon-based Schottky diodes submitted to MW-ECR hydrogen plasma” (2018), has been cited 16 times. 3 of these publications date from the last three years of activity. Their work is co-authored with at least 12 researchers, including institutions in France.
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Create my free profile Add my publicationsResearch areas
- Silicon and Solar Cell Technologies
- Semiconductor materials and interfaces
- Semiconductor materials and devices
- Thin-Film Transistor Technologies
- Plasma Applications and Diagnostics
Publications (16)
- Controlling defect passivation in polycrystalline silicon through hydrogen–dopant interactions during MW-ECR plasma treatment
- Phosphorus deactivation mechanisms by hydrogenation in the n+ emitter region and its effect on defects passivation in n+pp+ poly-silicon solar cells
- Understanding the Phosphorus Deactivation in n+ Emitter Region and Its Effect on Defect Passivation in Hydrogenated n+pp+ Poly-Silicon Solar Cells
- Defects passivation and H-diffusion controlled by emitter region in polysilicon solar cells submitted to hydrogen plasma
- Hydrogen Diffusion Study via Phosphorus Deactivation in n-Type Silicon
- Tuning of passivation efficiency of defects in emitter region of polysilicon solar cells using hydrogen plasma
- A Discussion About Hydrogen Diffusion in n+pp+ Polysilicon Solar Cells Following Analysis of Both Dopant Deactivation and Defects Passivation
- Hydrogen Diffusion Mechanism in Polysilicon Solar Cells Deduced from Analysis of Dopant Deactivation and Open-Circuit Voltage Evolution
- Mechanism for phosphorus deactivation in silicon-based Schottky diodes submitted to MW-ECR hydrogen plasma
- Effective phosphorus deactivation in schottky diodes hydrogenated in MW-ECR plasma reactor
- Role of MW-ECR hydrogen plasma on dopant deactivation and open-circuit voltage in crystalline silicon solar cells
- MOS structures quality under annealing influence
- Thermal oxidation effect on structural and optical properties of heavily doped phosphorus polycrystalline silicon films
- Effect of MW-ECR plasma hydrogenation on polysilicon films based solar cells
- Effective hydrogenation and surface damage induced by MW-ECR plasma of fine-grained polycrystalline silicon
- Electrical properties after thermal oxidation, of B-LPCVD polysilicon films
Publication venues
- Applied Physics A × 4
- Journal of Ovonic Research × 2
- Springer proceedings in energy × 2
- Materials Science and Engineering B × 1
- Lecture notes in networks and systems × 1
- Indian Journal of Physics × 1
Publications per year
- 20261
- 20242
- 20233
- 20211
- 20201
- 20181
- 20161
- 20141
- 20131
- 20111
Collaborations
Partner institutions : Research Center in Industrial Technologies · University of Jijel · University Ferhat Abbas of Setif · Centre National de la Recherche Scientifique · University of Béjaïa
Co-authors’ countries : France
Co-authors
- Djamel Eddine Belfennache
- Boubekeur Birouk
- R. Ouldamer
- Radhia Yekhlef
- M. Samah
- N. Brihi
- S. Mahdid
- K. Bouferrache
- M.A. Ghebouli
- M. Fatmi
- Soumia Zaiou
- Y. Benkrima
Bibliographic data from OpenAlex (open database).
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