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C. Bilel
Affiliation : Jouf University
- 21Publications (affiliation in Tunisia)
- 24Total publications
- 207Citations
- 9h-index
Research profile
C. Bilel has 21 indexed publications (2014–2022). Their work appears mainly in “Thin Solid Films”, “Solid State Communications” and “Optik”. Their most cited article, “Structural and optical investigations on sprayed Co doped La2O3 thin films along with photocatalytic and anti-bacterial applications” (2021), has been cited 26 times. 6 of these publications date from the last three years of activity. Their work is co-authored with at least 8 researchers, including institutions in Saudi Arabia.
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Create my free profile Add my publicationsResearch areas
- Semiconductor Quantum Structures and Devices
- GaN-based semiconductor devices and materials
- solar cell performance optimization
- TiO2 Photocatalysis and Solar Cells
- Advanced Photocatalysis Techniques
Publications (21)
- Atomistic mechanism effects on the growth of GaAsBi and GaAs nanowires
- Structural and optical investigations on sprayed Co doped La2O3 thin films along with photocatalytic and anti-bacterial applications
- Synthesis and physical characterization of Ni-doped La2O3 for photocatytic application under sunlight
- Growth and investigation of LaNiO3/La2O3 composites films for optoelectronic applications
- Modeling of the Growth Mechanisms of GaAsBi and GaAs Nanowires
- Physical investigations on annealed structure Cu/La2O3 for photocatalytic application under sunlight
- Electron Mobility Calculation of Diluted III–V-Nitrides Alloys
- Formation of Fe nanowires on Cu(1 0 0) vicinal surfaces
- Study of Stark Effect in n-doped 1.55 μm InN0.92yP1−1.92yBiy/InP MQWs
- Discontinuities and bands alignments of strain-balanced III-V-N/III-V-Bi heterojunctions for mid-infrared photodetectors
- Theoretical study of the carrier effective mass in diluted III-N-V semiconductor alloys by using 10-band k.p model
- Optical gain spectra of 1.55 μm GaAs/GaN.58yAs1-1.58yBiy/GaAs single quantum well
- Effects of p-type doping and electric field on electronic band structure and optical properties of GaNAsBi/GaAs quantum well detectors operating at 1.55 μm
- Carriers confinement study of GaNAsBi/GaAs QWs emitting at 1.3 and 1.55 μm
- Theoretical calculations of absorption spectra of GaNAsBi-based MQWs operating at 1.55 μm
- n doping effect modeling in 1.3 μm GaN0.58As1−1.58Bi /GaAs quantum wells
- Investigation of the doping and Stark effects on the band structure and optical absorption of 1.55 μm GaNAsBi/GaAs MQWs
- Photoreflectance analysis of annealed vanadium-doped GaAs thin films grown by metalorganic vapor phase epitaxy
- Self-consistent analysis of the band structure of doped lattice-matched GaNAsBi-based QWs operating at 1.55μm
- Photoreflectance characterization of vanadium-doped GaAs layers grown by metalorganic vapor phase epitaxy
- Stark effect in GaNAsBi/GaAs quantum wells operating at 1.55 μm
Publication venues
- Thin Solid Films × 3
- Solid State Communications × 2
- Optik × 2
- Journal of Materials Science Materials in Electronics × 2
- Journal of Electronic Materials × 2
- Semiconductors × 2
Publications per year
- 20221
- 20214
- 20201
- 20192
- 20181
- 20164
- 20155
- 20143
Collaborations
Partner institutions : University of Monastir · Qassim University
Co-authors’ countries : Saudi Arabia
Co-authors
Bibliographic data from OpenAlex (open database).
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