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Home › Researcher directory › M. Adnane

M. Adnane

Affiliation : Université des Sciences et de la Technologie d'Oran Mohamed Boudiaf

  • 46Publications (affiliation in Algeria)
  • 55Total publications
  • 749Citations
  • 15h-index

Research profile

M. Adnane has 46 indexed publications (2000–2026). Their work appears mainly in “Journal of Nano- and Electronic Physics”, “The European Physical Journal Applied Physics” and “Russian Journal of Physical Chemistry B”. Their most cited article, “Thickness dependence of structural, electrical and optical behaviour of undoped ZnO thin films” (2008), has been cited 146 times. 12 of these publications date from the last three years of activity. Their work is co-authored with at least 12 researchers, including institutions in France, South Korea, Japan.

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Research areas

  • Chalcogenide Semiconductor Thin Films
  • ZnO doping and properties
  • Thin-Film Transistor Technologies
  • Advanced Materials and Semiconductor Technologies
  • TiO2 Photocatalysis and Solar Cells

Publications (46)

Publication venues

  • Journal of Nano- and Electronic Physics × 4
  • The European Physical Journal Applied Physics × 3
  • Russian Journal of Physical Chemistry B × 2
  • Journal of Optics × 2
  • Semiconductors × 2
  • Springer proceedings in energy × 2

Publications per year

  • 20261
  • 20255
  • 20246
  • 20234
  • 20224
  • 20213
  • 20207
  • 20192
  • 20181
  • 20171

Collaborations

Partner institutions : Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique · Research Center in Industrial Technologies · Centre de Recherche Nucléaire d’Alger · Université de Mostaganem · Université de Bourgogne

Co-authors’ countries : France · South Korea · Japan

Co-authors

Bibliographic data from OpenAlex (open database).

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