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Jad Mohdad

Affiliation : Centre National de la Recherche Scientifique

1Publications (affiliation in France)
10Total publications
30Citations
4h-index

Research profile

Jad Mohdad has 1 indexed publication (2016). Their work appears in “physica status solidi (a)”. Their most cited article, “Influence of metal-organic vapor phase epitaxy parameters and Si(111) substrate type on the properties of AlGaN/GaN HEMTs with thin simple b” (2016), has been cited 9 times. Their work is co-authored with at least 7 researchers, including institutions in Tunisia.

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Research areas

Analog and Mixed-Signal Circuit Design
Magnetic properties of thin films
Low-power high-performance VLSI design
Advanced Memory and Neural Computing
GaN-based semiconductor devices and materials

Publications (1)

Influence of metal-organic vapor phase epitaxy parameters and Si(111) substrate type on the properties of AlGaN/GaN HEMTs with thin simple buffer
2016 · physica status solidi (a) · cited 9 times

Collaborations

Partner institutions : Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications · University of Monastir · Institut d'Electronique, de Microélectronique et de Nanotechnologie

Co-authors’ countries : Tunisia

Co-authors

Bibliographic data from OpenAlex (open database).