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Timothée Pingault

Affiliation : Centre National de la Recherche Scientifique

2Publications (affiliation in France)
9Total publications
12Citations
2h-index

Research profile

Timothée Pingault has 2 indexed publications (2016–2018). Their work appears mainly in “Surface Topography Metrology and Properties” and “Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics”. Their most cited article, “(111)Si thin layers detachment by stress-induced spallation” (2018), has been cited 2 times. Their work is co-authored with at least 5 researchers, including institutions in Morocco.

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Research areas

Silicon and Solar Cell Technologies
Semiconductor materials and devices
Thin-Film Transistor Technologies
Ion-surface interactions and analysis
Gold and Silver Nanoparticles Synthesis and Applications

Publications (2)

(111)Si thin layers detachment by stress-induced spallation
2018 · Surface Topography Metrology and Properties · cited 2 times
A novel kerf‐free wafering process combining stress‐induced spalling and low energy hydrogen implantation
2016 · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · cited 1 times

Publication venues

Surface Topography Metrology and Properties × 1
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics × 1

Publications per year

20181
20161

Collaborations

Partner institutions : Université d'Orléans · Mohammed V University

Co-authors’ countries : Morocco

Co-authors

Bibliographic data from OpenAlex (open database).