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Nicolas Baboux

Affiliation : Institut des Nanotechnologies de Lyon · Institut National des Sciences Appliquées de Lyon

3Publications (affiliation in France)
162Total publications
781Citations
16h-index

Research profile

Nicolas Baboux has 3 indexed publications (2007–2008). Their work appears mainly in “Microelectronics Journal” and “International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS)”. Their most cited article, “Electrical characteristics and modelling of multi-island single-electron transistor using SIMON simulator” (2008), has been cited 12 times. Their work is co-authored with at least 2 researchers.

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Research areas

Ferroelectric and Negative Capacitance Devices
Semiconductor materials and devices
Ferroelectric and Piezoelectric Materials
Phase-change materials and chalcogenides
Advanced Memory and Neural Computing

Publications (3)

Electrical characteristics and modelling of multi-island single-electron transistor using SIMON simulator
2008 · Microelectronics Journal · cited 12 times
A SPICE Model for Single Electron Transistor Applications at Low Temperatures: Inverter and Ring Oscillator
2008 · International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS) · cited 3 times
A new SIMPLORER model for single-electron transistors
2007 · Microelectronics Journal · cited 6 times

Publication venues

Microelectronics Journal × 2
International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS) × 1

Publications per year

20082
20071

Co-authors

Bibliographic data from OpenAlex (open database).