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B. Eblé

Affiliation : Centre National de la Recherche Scientifique · Institut des NanoSciences de Paris

• 2Publications (affiliation in France)
• 48Total publications
• 1131Citations
• 17h-index

ORCIDOpenAlex

Research profile

B. Eblé has 2 indexed publications (2011–2014). Their work appears mainly in “Semiconductor Science and Technology” and “Physical Review B”. Their most cited article, “Effects of strain on the optoelectronic properties of annealed InGaAs/GaAs self-assembled quantum dots” (2014), has been cited 31 times. Their work is co-authored with at least 4 researchers.

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Research areas

• Semiconductor Quantum Structures and Devices
• Quantum and electron transport phenomena
• Diamond and Carbon-based Materials Research
• Quantum Dots Synthesis And Properties
• Strong Light-Matter Interactions

Publications (2)

• Effects of strain on the optoelectronic properties of annealed InGaAs/GaAs self-assembled quantum dots
  2014 · Semiconductor Science and Technology · cited 31 times
• Optical orientation of bright excitons in InAs/GaAs quantum dots: Influence of a Faraday magnetic field and the dark exciton states
  2011 · Physical Review B · cited 8 times

Publication venues

• Semiconductor Science and Technology × 1
• Physical Review B × 1

Publications per year

• 20141
• 20111

Collaborations

Partner institutions : Université Pierre-et-Marie-Curie

Co-authors

• C. Testelin
• Aristide Lemaître
• F. Bernardot
• M. Chamarro

Bibliographic data from OpenAlex (open database).